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"CMP"

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"CMP"

Enhancement of SiO2 Uniformity by High-Pressure Deuterium Annealing
Yong-sik Kim, Dae-han Jung, Hyo-jun Park, Ju-won Yeon, Tae-hyun Kil, Jun-young Park
J Korean Inst Electr Electron Mater Eng 2024;37(2):148-153.   Published online March 1, 2024
DOI: https://doi.org/10.4313/JKEM.2024.37.2.4
As complementary metal-oxide semiconductor (CMOS) is scaled down to achieve higher chip density, thin-film layers have been deposited iteratively. The poor film uniformity resulting from deposition or chemical mechanical planarization (CMP) significantly affects chip yield. Therefore, the development of novel fabrication processes to enhance film uniformity is required. In this context, high-pressure deuterium annealing (HPDA) is proposed to reduce the surface roughness resulting from the CMP. The HPDA is carried out in a diluted deuterium atmosphere to achieve cost-effectiveness while maintaining high pressure. To confirm the effectiveness of HPDA, time-of-flight secondary-ion mass spectrometry (ToF-SIMS) and atomic force microscopy (AFM) are employed. It is confirmed that the absorbed deuterium gas facilitates the diffusion of silicon atoms, thereby reducing surface roughness.
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Regular Paper : Characteristics of CMP-PLA Heatsink Materials with Carbon Nanotube Contents
Young Gon Kim
J Korean Inst Electr Electron Mater Eng 2013;26(12):924-927.   Published online December 1, 2013
DOI: https://doi.org/10.4313/JKEM.2013.26.12.924
In this study, we proposed CMP-PLAs to replace the Al heat sinks as heat sink materials, and investigated heat dissipation characteristics of the LED lighting devices using them. The crystallinity of the proposed CMP-PLA heat sinks decreased with increasing carbon nanotube contents in CMP-PLA. However, the thermal conductivity was improved with the increase of the carbon nanotube contents. The heat dissipation characteristics of the LED lighting devices using CMP-PLA heat sinks was improved with increasing carbon nanotube contents in CMP-PLA. For the LED lighting devices using CMP-PLA heat sinks with 40% carbon nanotube contents, the initial temperature measured at the heat sink plate was 27℃, which increased as time, and it was saturated around 56℃ after an hour. The LED lighting devices using CMP-PLA heat sinks are expected to be functional materials that can reduce their weight and improve their electric properties, compared to those using existing Al heat sinks.
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Regular Paper : Characteristics of LED Lighting Device Using Heat Sinks of 7.5 W CMP-PLA
Young Gon Kim
J Korean Inst Electr Electron Mater Eng 2013;26(12):920-923.   Published online December 1, 2013
DOI: https://doi.org/10.4313/JKEM.2013.26.12.920
In this paper, the characteristics of a carbon nanotube composite heat sink proposed to replace the advanced Al heat sinks for LED lighting devices were studied. Proposed CMP-PLA heat sink was made by mixing 20∼70 wt% carbon nanotube, 20∼70 wt% bio-degradable polymer of melt-blended PLA (poly lactic acid) and PBS (poly butylene succinate) and PLA nucleating agents composed of the mixture of soybean oil and biotites, at 150∼220℃ with 1,000∼1,500 rpm. Optical and electric characteristics of 7.5W LED lighting devices using heat sinks with such prepared CMP-PLA were investigated. And, the properties of the heat, which was not released from the CMP-PLA type heat sinks, was also investigated. The color temperature of LED lighting devices using the CMP-PLA heat sinks was 5,956 K,which is x= 0.32 and y= 0.34 in the XY chromaticity, and the color rendering index was 75. The luminous flux and the luminous efficiency of LED lighting devices using the CMP-PLA heat sinks was 540.6 lm and 72.68 lm/W respectively. Measured initial temperature of the heat sinks was 27℃, and their temperature increased as time to be saturated at 52℃ after an hour.
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Regular Paper : Particle Removal on Buffing Process After Copper CMP
Woon Ki Shin, Sun Joon Park, Hyun Seop Lee, Moon Ki Jeong, Young Kyun Lee, Ho Jun Lee, Young Min Kim, Han Chul Cho, Suk Bae Joo, Hae Do Jeong
J Korean Inst Electr Electron Mater Eng 2011;24(1):17-21.   Published online January 1, 2011
DOI: https://doi.org/10.4313/JKEM.2011.24.1.17
Copper (Cu) had been attractive material due to its superior properties comparing to other metals such as aluminum or tungsten and considered as the best metal which can replace them as an interconnect metal in integrated circuits. CMP (Chemical Mechanical Polishing) technology enabled the production of excellent local and global planarization of microelectronic materials, which allow high resolution of photolithography process. Cu CMP is a complex removal process performed by chemical reaction and mechanical abrasion, which can make defects of its own such as a scratch, particle and dishing. The abrasive particles remain on the Cu surface, and become contaminations to make device yield and performance deteriorate. To remove the particle, buffing cleaning method used in post-CMP cleaning and buffing is the one of the most effective physical cleaning process. AE(Acoustic Emission) sensor was used to detect dynamic friction during the buffing process. When polishing is started, the sensor starts to be loaded and produces an electrical charge that is directly proportional to the applied force. Cleaning efficiency of Cu surface were measured by FE-SEM and AFM during the buffing process. The experimental result showed that particles removed with buffing process, it is possible to detect the particle removal efficiency through obtained signal by the AE sensor.
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Effect of Pad Thickness on Removal Rate and Within Wafer Non-Uniformity in Oxide CMP
Jae Hyun Bae, Hyun Seop Lee, Jae Hong Park, Hideaki Nishizawa, Masaharu Kinoshita, Hae Do Jeong
J Korean Inst Electr Electron Mater Eng 2010;23(5):358-363.   Published online May 1, 2010
DOI: https://doi.org/10.4313/JKEM.2010.23.5.358

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  • Effects of CMP Retaining Ring Material on the Performance of Wafer Polishing
    Ki-Won Park, Eun-young Kim, Dong-Sam Park
    Journal of the Korean Society of Manufacturing Process Engineers.2020; 19(3): 22.     CrossRef
  • Effects of Insert Materials of Retaining Ring on Polishing Finish in Oxide CMP
    Ki-Won Park, Dong-Sam Park
    Journal of the Korean Society of Manufacturing Process Engineers.2019; 18(8): 44.     CrossRef
  • Finite Element Analysis on Dynamic Viscoelasticity of CMP Polishing Pad
    Byeongjun Pak, Dasol Lee, Seonho Jeong, Hyunjin Kim, Haedo Jeong
    Journal of the Korean Society for Precision Engineering.2019; 36(2): 177.     CrossRef
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Effect of PVA Brush Contamination on Post-CMP Cleaning Performance
Han Chul Cho, Min Jong Yuh, Suk Joo Kim, Hae Do Jeong
J Korean Inst Electr Electron Mater Eng 2009;22(2):114-118.   Published online February 1, 2009
DOI: https://doi.org/10.4313/JKEM.2009.22.2.114

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  • Combined Effects of PVA Brush Scrubbing Parameters and Processes on Post-CMP Cross-Contamination
    Kwang-Min Han, Sumit Kumar, Mir Jalal Khan, Jae-Hyeong Lee, Tae-Gon Kim, Jin-Goo Park
    ECS Journal of Solid State Science and Technology.2025; 14(4): 044013.     CrossRef
  • Particle removal behavior of micropatterned pad buffing in post-CMP cleaning
    Hokyoung Jung, Youngwook Park, Hanchul Cho, Doyeon Kim, Taekyung Lee, Haedo Jeong, Hyoungjae Kim
    Materials Science in Semiconductor Processing.2025; 194: 109530.     CrossRef
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Development of Microstructure Pad and Its Performances in STI CMP
Suk Hoon Jeong, Jae Woo Jung, Ki Hyun Park, Heon Deok Seo, Jae Hong Park, Boum Young Park, Suk Bae Joo, Jae Young Choi, Hae Do Jeong
J Korean Inst Electr Electron Mater Eng 2008;21(3):203-207.   Published online March 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.3.203
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Effect of Temperature on Polishing Properties in Oxide CMP
Young Jin Kim, Boum Young Park, Hyoung Jae Kim, Hae Do Jeong
J Korean Inst Electr Electron Mater Eng 2008;21(2):93-98.   Published online February 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.2.093
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Stability and Improvement of Polishing Pad in W CMP
J Korean Inst Electr Electron Mater Eng 2007;20(12):1027-1033.   Published online December 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.12.1027

Citations

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  • A Study on the Polishing Characteristics Using Floating Nozzle in Linear Roll CMP
    Chiho Lee, Haedo Jeong
    Journal of the Korean Society for Precision Engineering.2015; 32(7): 627.     CrossRef
  • Statistical Analysis on Process Variables in Linear Roll-CMP
    Han Wang, Hyunseop Lee, Haedo Jeong
    Journal of the Korean Society of Tribologists and Lubrication Engineers.2014; 30(3): 139.     CrossRef
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Polishing Pad Analysis and Improvement to Control Performance
J Korean Inst Electr Electron Mater Eng 2007;20(10):839-845.   Published online October 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.10.839
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A Study on 013㎛ Cu/Low-k Process Setup and Yield Improvement
J Korean Inst Electr Electron Mater Eng 2007;20(4):325-331.   Published online April 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.4.325
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Effect of Pad Buffing process on Material Removal Characteristics in Silicon Chemical Mechanical Polishing
J Korean Inst Electr Electron Mater Eng 2007;20(4):303-307.   Published online April 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.4.303
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Planarizaiton of Cu Interconnect using ECMP Process
J Korean Inst Electr Electron Mater Eng 2007;20(3):213-217.   Published online March 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.3.213
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Mechanical Analysis on Uniformity in Copper Chemical Mechanical Planarization
J Korean Inst Electr Electron Mater Eng 2007;20(1):74-79.   Published online January 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.1.074
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A Study on the Within Wafer Non-uniformity of Oxide Film in CMP
J Korean Inst Electr Electron Mater Eng 2005;18(6):521-526.   Published online June 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.6.521
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Atomic Scale Modeling of Chemical Mechanical Polishing Process
J Korean Inst Electr Electron Mater Eng 2005;18(5):414-422.   Published online May 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.5.414
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A Study on the Characteristics of Stick-slip Friction in CMP
J Korean Inst Electr Electron Mater Eng 2005;18(4):313-320.   Published online April 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.4.313

Citations

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  • Effect of Slurry Film Thickness Variation according to Spray Range Using Ultrasonic Spray Nozzle on Material Removal Rate
    Seongnyeong Heo, Seonho Jeong, Minji Kim, Youngwook Park, Haedo Jeong
    Journal of the Korean Society for Precision Engineering.2022; 39(9): 675.     CrossRef
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CMP Properties of Oxide Film with Various Pad Conditioning Temperatures
J Korean Inst Electr Electron Mater Eng 2005;18(4):297-302.   Published online April 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.4.297
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Polishing Properties by Change of Slurry Temperature in Oxide CMP
J Korean Inst Electr Electron Mater Eng 2005;18(3):219-225.   Published online March 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.3.219
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A Study on DOE Method to Optimize the Process Parameters for Cu CMP
J Korean Inst Electr Electron Mater Eng 2005;18(1):24-29.   Published online January 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.1.024

Citations

Citations to this article as recorded by  
  • Statistical Analysis on Process Variables in Linear Roll-CMP
    Han Wang, Hyunseop Lee, Haedo Jeong
    Journal of the Korean Society of Tribologists and Lubrication Engineers.2014; 30(3): 139.     CrossRef
  • 65 View
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  • 1 Crossref
Planarization Characteristics of CMP for WO3 Film with an Addition of Oxidizers
J Korean Inst Electr Electron Mater Eng 2005;18(1):12-16.   Published online January 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.1.012
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A Study on CMP Properties of SnO2 Thin Film for Application of Gas Sensor
J Korean Inst Electr Electron Mater Eng 2004;17(12):1296-1300.   Published online December 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.12.1296
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Role of Oxidants for Metal CMP Applications
Yong Jin Seo, Sang Yong Kim, U Seon Lee
J Korean Inst Electr Electron Mater Eng 2004;17(4):378-383.   Published online April 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.4.378
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Effects of Oxidizer Additive on the Performance of Copper-Chemical Mechanical Polishing using Tungsten Slurry
U Seon Lee, Gwon U Choe, Yeong Sig Lee, Yeon Og Choe, Yong Taeg O, Yong Jin Seo
J Korean Inst Electr Electron Mater Eng 2004;17(2):156-161.   Published online February 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.2.156
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Aging Effects of Silica Slurry and Oxide CMP Characteristics
U Seon Lee, Pil Ju Go, Yeong Sig Lee, Yong Jin Seo, Gwang Jun Hong
J Korean Inst Electr Electron Mater Eng 2004;17(2):138-143.   Published online February 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.2.138
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Characteristics of 2-Step CMP (Chemical Mechanical Polishing) Process using Reused Slurry by Adding of Silica Abrasives
Yong Jin Seo, Gyeong Jin Lee, Un Sig Choe, Sang Yong Kim, Jin Seong Park, U Seon Lee
J Korean Inst Electr Electron Mater Eng 2003;16(9):759-764.   Published online September 1, 2003
DOI: https://doi.org/10.4313/JKEM.2003.16.9.759
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