Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

산화막 CMP에서 패드 두께가 연마율과 연마 불균일도에 미치는 영향

배재현, 이현섭, 박재홍, 니시자와히데키, 키노시타마사하루, 정해도

Effect of Pad Thickness on Removal Rate and Within Wafer Non-Uniformity in Oxide CMP

Jae Hyun Bae, Hyun Seop Lee, Jae Hong Park, Hideaki Nishizawa, Masaharu Kinoshita, Hae Do Jeong
J Electr Electron Mater 2010;23(5):358-363.
Published online: May 1, 2010
  • 7 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
prev next

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

Effect of Pad Thickness on Removal Rate and Within Wafer Non-Uniformity in Oxide CMP
J Electr Electron Mater. 2010;23(5):358-363.   Published online May 1, 2010
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Effect of Pad Thickness on Removal Rate and Within Wafer Non-Uniformity in Oxide CMP
J Electr Electron Mater. 2010;23(5):358-363.   Published online May 1, 2010
Close