Dye-sensitized solar cells (DSSCs) suffer from efficiency limitations due to interfacial charge recombination at the TiO₂/dye/electrolyte interface. In this study, aminopropyltrimethoxysilane (APS) was introduced onto nanoporous TiO₂ photoelectrodes via a dip-coating process with controlled coating times to investigate the effect of silanization time on interfacial charge transport behavior. Unlike concentration-driven structural modification, this work focuses on the evolution of the APS-modified interface governed by reaction time. The DSSC with 30 min APS treatment exhibited the highest power conversion efficiency of 5.34%, representing a 19% enhancement compared to the untreated device (4.49%), mainly due to increased short-circuit current density and open-circuit voltage. However, prolonged coating times (2 h and 24 h) resulted in a significant decrease in photocurrent density, leading to reduced device performance despite partial improvement in recombination resistance. These results are attributed to the time-dependent evolution of the APS interfacial layer. At moderate coating time, APS provides effective surface functionalization, enhancing dye adsorption and suppressing interfacial recombination. In contrast, prolonged coating is expected to induce increased surface coverage and silane condensation, which can hinder electron injection and increase charge transport resistance. Therefore, the photovoltaic performance is governed by a trade-off between recombination suppression and charge injection efficiency, controlled by the silanization time. This study highlights the critical role of interfacial reaction kinetics in determining charge transport behavior and provides an effective strategy for optimizing DSSC performance through time-dependent interface engineering.

Dye adsorption is one of the most time-consuming processes in the fabrication of dye-sensitized solar cells (DSSCs), typically requiring approximately 24 h at room temperature. In this study, the effect of adsorption temperature and time on photovoltaic performance of DSSCs was investigated in order to reduce processing time and improve device productivity. Nanoporous TiO₂ photoelectrodes were immersed in N719 dye solution at 60°C for 3 h, 10 h, 17 h, and 24 h, and their performance was compared with that of cells sensitized at room temperature for 24 h. Photovoltaic characterization under AM 1.5 illumination showed that DSSCs sensitized at 60°C exhibited improved performance compared to those sensitized at room temperature. The device sensitized at 60°C for 3 h showed comparable or higher conversion efficiency than the reference cell sensitized for 24 h at room temperature. The improvement in device performance is attributed to enhanced dye adsorption kinetics resulting from increased reaction rate between the carboxyl groups of N719 dye molecules and hydroxyl groups on the TiO₂ surface. Electrochemical impedance spectroscopy analysis revealed reduced recombination resistance at the TiO₂/dye/electrolyte interface for cells sensitized at elevated temperature. UV–Vis absorption analysis confirmed increased dye loading on the TiO₂ surface for the 60°C condition. These results demonstrate that elevated temperature dye adsorption significantly reduces processing time while maintaining photovoltaic performance, providing an effective strategy for improving manufacturing efficiency of DSSCs.

Wearable temperature sensors are becoming increasingly important for continuous health monitoring, personalized healthcare, and biointegrated electronic systems. However, conventional temperature-sensing platforms often suffer from limited thermal sensitivity, insufficient mechanical compliance, and unstable performance under repeated deformation, making it difficult to detect subtle physiological temperature variations in real time. Here, this tutorial status report presents a fabrication strategy for highly sensitive wearable temperature sensors based on gold-doped crystalline silicon nanomembranes. Gold diffusion into crystalline silicon introduces deep-level impurity states that modulate the Fermi level and shift the freeze-out region toward the physiological temperature range, enabling an ultrahigh negative temperature coefficient of resistance. By integrating the gold-doped silicon nanomembrane with a polyimide-supported ultrathin platform, neutral mechanical plane design, and serpentine mesh interconnects, the resulting device can provide high thermal sensitivity, fast response, conformal skin attachment, and stable operation under mechanical deformation. This fabrication approach is expected to broaden the use of impurity-engineered silicon nanomembranes in next-generation wearable sensors, flexible bioelectronics, and multifunctional healthcare monitoring systems.

This paper reviews the energy yield enhancement characteristics of bifacial photovoltaic systems combined with solar tracking, focusing on their performance relative to conventional monofacial fixed-tilt configurations. The fundamental mechanisms of yield improvement are summarized, highlighting the largely additive contributions of solar tracking, which increases front-side irradiance, and bifacial modules, which utilize rear-side reflected and diffuse radiation. Reported results from previous studies indicate that bifacial systems with single-axis tracking typically achieve 25–35% higher annual energy yield compared with standard monofacial fixed-tilt systems, with variations depending on environmental and design conditions. Key design and environmental considerations influencing system performance are discussed to provide practical insights for the application of bifacial tracking systems in utilityscale photovoltaic installations.

Polymer nanocomposites incorporating inorganic nanofillers have emerged as highly promising electromagnetic interference (EMI) shielding materials, combining mechanical compliance with robust conductive percolation networks. Carbon nanotubes (CNTs) are particularly attractive as conductive fillers because their high aspect ratio facilitates percolation at low loadings. Also, CNTs offer superior mechanical durability under deformation compared to rigid, fracture-prone metal nanowires. For EMI shielding, high electrical conductivity is critical as it enhances both reflection and absorption through efficient charge dissipation and conduction losses. However, achieving highly aligned conductive pathways without degrading the intrinsic electrical properties of CNTs remains a significant challenge. Here, we demonstrate a non-destructive magnetic surface-functionalization and alignment strategy. Using a polydopamine (PDA)-mediated route, pristine multiwalled CNTs are uniformly decorated with Fe₃O₄ nanoparticles (FMWCNTs). This enables highly effective magnetic field-driven alignment at fields as low as 10 mT, promoting the strategic formation of percolation networks. By optimizing the Fe₃O₄/MWCNT ratio for high saturation magnetization and uniform coverage, the aligned FMWCNTs exhibit significant electrical anisotropy, delivering a 10.7-fold higher electrical conductivity in the parallel configuration compared to the vertical configuration. These findings present a scalable, room-temperature platform for engineering directionally enhanced conductivity in polymer nanocomposites, with broad applicability in advanced EMI shielding, flexible electronics, and advanced packaging technologies.

There is an increasing demand for freeform stretchable display technologies capable of overcoming spatial limitations in next-generation platforms such as augmented reality (AR) and virtual reality (VR). To realize such stretchable displays, all constituent materials—including semiconductors, electrodes, insulators, and substrates—must exhibit sufficient mechanical elasticity. To date, stretchable gate insulators have primarily relied on organic polymers such as poly(4-vinylphenol-co-methyl methacrylate) (PVP-co-PMMA). However, their practical application is significantly limited by poor electrical properties, including low dielectric constant and instability. In this work, we propose a novel gate insulator structure that minimizes the use of solution-based processes, which often suffer from poor uniformity and may damage underlying layers during fabrication. The proposed structure integrates the advantages of both organic and inorganic materials by employing a hybrid configuration. Specifically, high-k HfO₂ thin films are deposited on both the top and bottom of an organic layer composed of PVP-co-PMMA, poly(melamine-co-formaldehyde) (PMF) as a crosslinking agent, and propylene glycol monomethyl ether acetate (PGMEA) as a solvent. This inorganic–organic–inorganic structure effectively compensates for the inherent electrical limitations of organic materials. As a result, the fabricated thin-film transistors (TFTs) exhibit improved electrical performance and reliability compared to devices employing a single organic gate insulator.

The ability to manipulate and probe biomolecules at the single-molecule level has become an essential approach for understanding molecular interactions, conformational dynamics, and nanoscale transport phenomena. Advances in experimental techniques have enabled precise control of individual molecules with high spatial resolution and piconewton-level force sensitivity. These developments have significantly expanded the capability of studying biomolecular mechanics and dynamics beyond conventional ensemble measurements. A variety of physical strategies have been developed for single-molecule manipulation, including mechanical-force-based approaches, electric-field-driven methods, and nanoscale structural confinement techniques. Mechanical-force-based methods, such as optical tweezers, magnetic tweezers, and atomic force microscopy, enable direct measurement of molecular mechanical responses. Electric-field-based manipulation, represented by dielectrophoresis, allows noncontact control of particles and biomolecules through polarization effects in non-uniform electric fields. In addition, nanopore-based systems employ nanoscale confinement to regulate molecular transport and residence behavior. This review provides an overview of representative single-molecule manipulation techniques based on mechanical, electrical, and structural control and discusses their fundamental principles and implementation strategies.

The potential of replacing crosslinked polyethylene (XLPE) with an eco-friendly alternative, polypropylene (PP), as insulating material is investigated for overhead power distribution lines. Although XLPE exhibits excellent electrical and mechanical properties, the byproducts generated during crosslinking pose environmental challenges. PP is a viable alternative because of recyclability and absence of byproducts during crosslinking. This study evaluated alternating current (AC) breakdown strength, contact angle, and tracking resistance of two commercially available XLPE samples and three types of PP (PP1, PP2, PP3) with varying additive content. AC breakdown strength, analyzed using the Weibull distribution, facilitated relative comparison of insulation performance. PP2 exhibited scale parameters comparable to or exceeding those of XLPE. Contact angles exceeding 90° displayed hydrophobicity across all samples. To address pass/fail evaluation limitations, arcing images from tracking tests were analyzed using the box-counting method for fractal dimension analysis. Fractal dimensions increased with arcing extent, and complexity increased with test duration. Tracking resistance performance order was PP3, PP1, CC, PP2, OC which was attributed to enhanced heat dissipation properties of filler additives. The proposed quantitative method for comparing tracking resistance through fractal dimension analysis, explored the feasibility of using PP insulating materials in overhead power distribution lines.

In advanced device technologies such as microelectromechanical systems (MEMS), nanoscale electronics, optoelectronic components, and piezoelectric devices, the demand for enhanced mechanical, electrical, and optical performance together with high reliability continues to grow. In response, a variety of functional thin-film materials have been developed; among them, Pb(Zr,Ti)O₃ (PZT) thin films with high piezoelectric coefficients have emerged as key materials for realizing highperformance sensors and actuators. However, residual stress within thin films can adversely affect device reliability, performance, and lifetime. This tutorial paper provides a practical and step-by-step guide to residual stress analysis using X-ray diffraction (XRD) based on the sin²φ method. As a representative case study, we quantitatively analyze the in-plane residual stress of a PZT thin film deposited on a flexible metal-foil substrate. Residual stress was evaluated using X-ray diffraction (XRD) in combination with the sin²φ method. The present analysis is expected to deepen understanding of residual-stress behavior in thin films and to inform stress-aware design and reliability optimization of PZT-based devices

Neuromorphic computing, which mimics the energy-efficient parallel processing capabilities of the human brain, has emerged as an alternative to traditional von Neumann architectures that struggle with high power consumption in the era of artificial intelligence (AI). Despite the potential of Si-based neuromorphic chips, they often face fundamental limitations in integration density and biological compatibility, necessitating the development of next-generation devices that can better emulate the ionic signaling of biological systems. This review provides a comprehensive analysis of the recent research trends in artificial synapses and neurons based on organic electrochemical transistors (OECTs), highlighting their unique ability to achieve high transconductance and mixed ionic-electronic conduction at ultra-low operating voltages. We discuss how OECTs successfully replicate diverse synaptic plasticities and complex neuronal spiking behaviors through advanced material engineering and structural optimizations such as vertical architectures. Furthermore, this review discusses the implementation of high-order neural functions, including associative learning and logic operations, which are facilitated by the inherent electrochemical dynamics of organic semiconductors. Finally, overcoming current challenges in reliability and scalability will establish OECTs as a pivotal platform for low-power neuromorphic hardware and bio-integrated electronics.

Silicon carbide (SiC) MOSFETs provide superior performance compared to traditional silicon devices under hightemperature and high-power conditions, making them particularly valuable for power electronics applications requiring highfrequency switching and high-energy efficiency. As the electric vehicle (EV) market expands, these devices are commonly packaged into six-pack modules, which can show their different electrical characteristics between the bare-die device and the package due to packaging that improves heat dissipation and other properties. This study uses bare-die SiC MOSFETs to explore their intrinsic characteristics and evaluate their performance in a half-bridge configuration. A half-bridge circuit was constructed, and performance was assessed by varying driving frequencies (10 kHz and 50 kHz) and adjusting the duty cycle between 20% and 80%. Analysis revealed that, at a fixed switching frequency, the average output voltage and average output current are proportional to the duty cycle.

Breakdown strength is an essential parameter for evaluating the electrical performance and degradation behavior of cable insulation and IEC 60243 also emphasizes its importance for detecting changes in insulation characteristics due to aging. However, the current IEC standards are mainly limited to specifying electrode configurations and test voltage conditions for breakdown tests, while the influence of insulating oil, is not clearly addressed. In this study, the breakdown strength of a 66 kV wet-type submarine cable was experimentally evaluated using insulating oils with different kinematic viscosities of 10, 100, 500, and 1,000 cSt in order to achieve reliable and reproducible breakdown measurements. The experimental results show that the measured breakdown strength decreases by up to approximately 20% depending on the oil viscosity. This indicates that the viscosity of the insulating oil has a significant influence on the measured breakdown strength during breakdown test. Therefore, it is necessary to perform breakdown strength measurements under identical test conditions, including the physical properties of the insulating oil, to ensure reliable comparison and accurate assessment of insulation performance and degradation characteristics.

As electric vehicles (EVs) are rapidly adopted worldwide, large numbers are now transported by sea on dedicated car carriers. With this trend, concerns are increasing about fires and explosions caused by battery thermal runaway during marine transport, while existing SOC limits before loading remain largely empirical. This study experimentally investigates gas generation and explosion characteristics of EV lithium-ion cells under thermal runaway conditions representative of enclosed vehicle decks. We identify and quantify the main off-gas components and clarify the flammability behavior and explosion limits of key combustible species. The results provide basic data for assessing EV battery accidents at sea and support the development of safer ventilation and gas-management strategies for ships.

The rapid proliferation of artificial intelligence (AI) servers and high-performance computing systems has significantly elevated the technical and reliability requirements for multilayer ceramic capacitors (MLCCs). In such systems, MLCCs are critical passive components that must deliver high capacitance, fast transient response, and robust insulation performance under high temperature, voltage, and current density. This review examines the material, structural, and process innovations that underpin MLCC performance in AI applications. Key topics include the development of ultrathin dielectric layers (<0.5 μm), rare-earth doped BaTiO₃-based dielectrics with enhanced DC bias stability, and core-shell microstructures designed for temperature and field resilience. The paper also explores insulation degradation mechanisms―such as vacancydriven conduction and demixing―and advanced reliability assessment methodologies, including HALT, TSDC, and the tipping point framework. Comparisons with automotive-grade MLCCs highlight the unique requirements of AI systems, such as ultraminiaturization, high volumetric efficiency, and ppm-level field failure rates. Finally, the review discusses emerging trends in MLCC technology, including particle engineering, interface stabilization, and advanced lamination techniques, and provides insight into the future direction of capacitor development tailored to AI data center environments.

This study investigates the effect of mask material and thickness on the silicon etching profile using a high-density plasma (HDP) etching system, aiming to reduce optical loss in silicon-based optical waveguides. As the mask thickness increased, the etching sidewall angle became steeper. An etching profile angle of 87° was obtained when tetraethyl orthosilicate (TEOS) was used as the mask material, while 80° was obtained for photoresist (PR). This is attributed to electron charging on the mask surface in the plasma. The charged mask modifies the distribution and strength of the electric field depending on its thickness, thereby affecting the trajectory of positive ions accelerated toward the substrate by the bias voltage. Furthermore, Plasma diagnostics using optical emission spectroscopy (OES) and surface composition analysis using field emission Auger electron spectroscopy (FE-AES) revealed that changes in the mask material also alter the reaction pathways and formation characteristics of active species and silicon by-products in the plasma. These results suggest that the mask material influences the overall plasma characteristics, including electron density and ion energy, and plays a critical role in the precise control of silicon etching profiles for high-performance optical device fabrication.

The quench behavior of wires for superconducting fault current limiters at DC faults was simulated, with a focus on the effect of capacitor discharge on the quench. The behavior was also expressed in mathematical forms to facilitate a better understanding of the simulation results and for rough analytical estimations of the wire length suitable for the circuit voltage and capacitance. The quench resistance development behavior for various wire lengths and circuit capacitances was simulated using the model developed in the previous work. The quench behavior was expressed in mathematical forms, reflecting the concept of heat balance. During the quench, the wire temperature increased more slowly for longer wires, but was found to increase in a similar pattern. The wire length estimated by the mathematical formula was close to the one obtained by the simulation, with an error range of a few %. The calculations will be used to estimate effectively the length of wires needed to build superconducting fault current limiters for applications in DC power systems.

Cellulose nanofiber (CNF) has attracted significant attention as a next-generation insulating material due to its ecofriendly nature and outstanding functionalities. However, conventional kraft insulation paper suffers from limited dielectric breakdown strength and long-term reliability under high-voltage conditions, highlighting the need for alternative materials. In this study, kraft pulp was combined with five types of CNFs (A, B, C: wood-based / D, E: non-wood-based) to fabricate composite insulation papers, and their electrical and mechanical properties were systematically evaluated. The results showed that CNF incorporation generally enhanced density and tensile strength, while certain types contributed to lowering dielectric constant and improving breakdown strength. Among the wood-based CNFs, type C exhibited the most balanced performance in terms of dielectric stability and mechanical reinforcement. Among the non-wood-based CNFs, type E demonstrated notable improvements in structural compactness and tensile strength, suggesting favorable reliability. Therefore, this study identifies CNF C among wood-based types and CNF E among non-wood-based types as the most promising candidates for insulation performance enhancement, suggesting their applicability as next-generation insulating materials for power equipment and ecofriendly electronic devices.

Humidity monitoring of exhaled breath has emerged as a vital approach for noninvasive respiratory health assessment, underscoring the need for sensitive and reliable humidity sensors. Despite its high conductivity and hydrophilic functional groups, reduced graphene oxide (rGO) often undergoes irreversible moisture adsorption and gradual oxidation by residual water, resulting in sensitivity degradation and long-term instability during cycling. In this study, a montmorillonite/reduced graphene oxide (MMT/rGO) composite is developed as a room-temperature humidity-sensing material, exhibiting an optimized response of 115%, more than 14 times higher than that of pristine rGO. This superior performance originates from the synergistic interaction between the reversible MMT swelling and the conductive rGO network near the electrical percolation transition, which ensures excellent stability and repeatability under repeated humidity cycles. These findings suggest that the MMT/rGO composite provides a cost-effective and biocompatible platform for next-generation wearable humidity sensors capable of continuous respiratory monitoring.

(La_1-xBi_xSr_0.3)FeO₃ ceramics exhibiting excellent magnetoresistance were synthesized via the conventional solid-state reaction method. The structural and electrical properties were investigated as a function of Bi³⁺ content to evaluate their potential application as temperature sensors. And the sintering temperature and time were 1,200℃ and 4 h, respectively. The structural and electrical properties were investigated as a function of Bi content. With increasing Bi substitution, a slight enhancement in both average grain size and relative sintered density was observed. In particular, the specimen with x = 0.3 exhibited an average grain size of approximately 0.82 μm. All samples demonstrated negative temperature coefficient of resistance (NTCR) behavior, and the electrical resistivity decreased with increasing Bi content. The resistivity of the (La_0.4Bi_0.3Sr_0.3)FeO₃ composition was 4.68 mΩ-cm at 25°C. Additionally, the temperature coefficient of resistance (TCR) and the B_25/75-value, which quantify the sensitivity of resistivity to temperature variations, were found to increase with Bi content. (La_0.4Bi_0.3Sr_0.3)FeO₃ sample exhibited a TCR of 0.43%/°C and a B_25/75-value of 1,096 K at room temperature. The electrical conduction mechanism of the (La_1-xBi_xSr_0.3)FeO₃ system was well described by the small polaron hopping model, wherein thermally activated charge carriers hop between localized Fe-O-Fe sites via electron-phonon interactions.

Silicon carbide (SiC), with its wide bandgap and strong resistance to radiation and thermal conditions, is a promising material for ultraviolet (UV) photodetector applications under harsh environments. In this study, porous SiC thin films with thicknesses of 20, 50, and 80 nm were fabricated on 4H-SiC substrates using aerosol deposition (AD), which enables roomtemperature film formation. The device with a 50 nm-thick film exhibited the highest photoresponse under UV-C illumination (260 nm), achieving a maximum photo-to-dark current ratio (PDCR) of 205.2, a responsivity of 0.058 A/W, an external quantum efficiency (EQE) of 27.71%, and a specific detectivity (D*) of 7.9×10¹¹ Jones. These results are attributed to an optimized balance between photon absorption and carrier transport in the porous structure. The findings confirm the potential of ADfabricated porous SiC films for highly sensitive and scalable UV photodetector applications.

Metal halide perovskites (MHPs) have attracted attention as new display materials due to their excellent optical properties, but their application is limited by the complexity of conventional synthesis methods and the film formation processes. As an alternative, color conversion film fabricated via the aerosol deposition (AD) process using CsPbBr₃/Al₂O₃ powder, a ceramic matrix-based MHP composite, has expanded the practical utility of MHPs by simplifying both the synthesis and film formation steps. Nevertheless, the hammering effect that occurs during the AD process can damage the MHP crystal structure, leading to degradation of its optical properties. Therefore, in this study, to overcome the problem of optical degradation, we compared the structural and photoluminescence (PL) properties of films fabricated by adding polytetrafluoroethylene (PTFE), a material with a buffering effect, to the CsPbBr₃/Al₂O₃ starting powder at mass ratios of 0, 0.1, 0.5, 1, and 2 wt% to mitigate the hammering effect. The film containing 1 wt% PTFE exhibited the highest PL performance, achieving a luminous efficiency of 52.1 lm/W. This improvement is attributed to PTFE providing an optimal buffering effect without forming aggregates on the film surface. These results further enhance the applicability of AD-based color conversion films and are expected to contribute to the development of high-resolution display technologies.

Silicon carbide (SiC) power devices are attracting increasing attention for high-voltage and high-efficiency applications due to their superior material properties. However, achieving an optimal trade-off between specific on-resistance (Ron,sp) and breakdown voltage (BV) remains a key design challenge in planar MOSFET structures. In this study, twodimensional TCAD simulations were conducted to investigate the impact of varying the doping concentrations of the P-well (from 3 × 10¹⁷ to 6 × 10¹⁷ cm^-3) and JFET regions (from 1 × 10¹⁶ to 7 × 1016 cm^-3) on the electrical characteristics of 2.4 kVclass planar SiC MOSFETs. To maintain comparable BV conditions for 2.4 kV operation, two groups with P-well doping concentrations of 4.5 × 10¹⁷ cm^-3 and 5.3 × 1017 cm^-3 were analyzed and compared. When the P-well and JFET doping concentrations were 4.5 × 10¹⁷ cm^-3 and 1.5 × 10¹⁶ cm^-3, respectively, the simulated Ron,sp and BV were 1.41 mΩ·cm² and 3,150 V. In contrast, with P-well and JFET doping concentrations of 5.3 × 10¹⁷ cm^-3 and 5.0 × 10¹⁶ cm^-3, the Ron,sp was reduced to 1.31 mΩ·cm² while the BV slightly increased to 3,200 V. Based on these results, an optimized device structure was proposed, demonstrating its potential for integration into high-voltage SiC-based power systems. This study provides practical design insights and is expected to contribute to the advancement of wide bandgap semiconductor technologies for next-generation power electronics.

To ensure the long-term reliability of flexible photovoltaic (FPV) modules, it is crucial to develop an effective moisture barrier layer that prevents the infiltration of moisture and oxygen. We developed such a layer composed of parylene (700 nm) and AlOx (70 nm), optimizing its material properties, moisture-blocking performance, and processing conditions. The barrier layer applied to the Ethylene Tetrafluoroethylene (ETFE) substrate demonstrated a water vapor transmission rate (WVTR) of 6.33 × 10^-2 g/m²/day and an average visible light transmittance (AVT) of 85.3% over the 380-780 nm wavelength range. For the FPV module with this barrier, Damp/Heat (DH) reliability testing was conducted at 85℃ and 85% relative humidity for up to 1,000 hours. During testing, the power conversion efficiency (PCE) decreased slightly from 25.4% (0 hr) to 24.7% (1,000 hr), reflecting a minimal reduction of only 0.7%. The primary cause of degradation was identified as a -4% relative change in shortcircuit current density (JSC) before and after DH testing. Consequently, the ETFE/parylene/AlOx multilayer moisture barrier proved highly effective in ensuring the long-term reliability of solar modules.

With the advancement of the information society, the demand for highly integrated and multi-functional electronic devices is rapidly increasing. To meet these demands, high-performance transistors with low power consumption, high-speed operating, and mechanical flexibility are essential. Among various candidates, semiconducting single-walled carbon nanotubes (s-SWCNT)-based transistors, which exhibit intrinsically ambipolar characteristics, have emerged as promising components for CMOS-like circuits. In this study, s-SWCNT were selectively dispersed using rr-P3DDT, a thiophene-based conjugated polymer, and filed-effect transistors (FETs) were fabricated by inducting directional alignment for enhanced charge transport through an off-centered spin-coating process. The electrical characteristics of the fabricated s-SWCNT FETs were evaluated under various thermal annealing conditions (100℃, 150℃, 200℃, and 250℃). Off-centered spin-coated and high temperature annealed s- SWCNT FETs exhibited high field-effect mobilities over 5 cm²/Vs in both p-type and n-type operation, along with ideal Vshaped ambipolar transfer curves. These results indicate a significant enhancement in ambipolar performance due to efficient desorption of residual oxygen and water molecules in active channel via high temperature annealing. Furthermore, CMOS-like inverter circuits demonstrated an ideal inversion voltage (VIN = V_DD/2) and a high voltage gain of approximately 9.5. These findings highlight the potential of SWCNT-based materials for realizing next-generation flexible electronic circuits that combine high-performance, energy efficiency, and simplified solution-processing.

Multilayer ceramic capacitors (MLCCs) are essential for high-capacitance, miniaturized, and reliable electronic applications. This study examines the impact of layer stacking on the dielectric and electrical properties of MLCCs using a BaTiO₃-based dielectric with MgO, Mn₃O₄, Yb₂O₃, V₂O₅, and (BaCa)SiO₃ glass additives. MLCCs with 10 um-thick dielectric layers and varying Ni electrode layers (10, 30, 50, and 100 layers) were fabricated. The dielectric constant increases significantly up to 30 layers due to compressive stress and sintering densification but it becomes linear beyond 30 layers. Dissipation factor and ESR decrease with higher stacking due to improved sinterability, while breakdown voltage declines exponentially from defect accumulation and thermal stress. Insulation resistance decreases but stabilizes relative to capacitance. C-V results show stress-induced polarization suppression, which reduces the dielectric constant under high voltage. Optimized stacking and sintering conditions are crucial for MIL-PRF-32535 compliant MLCC designs.

Silicon carbon nitride (SiCN) thin films are promising materials for copper diffusion barriers and hybrid bonding in semiconductor processes. Oxidation-resistant films are increasingly critical for realizing high-reliability devices, highlighting the need for process control and property evaluation. In this study, we analyzed the thin film properties as a function of tetramethylsilane (4MS) gas partial pressure ratio (PPR), deposition temperature, and dual-power plasma conditions in a PECVD-based SiCN deposition process. Based on the results, we experimentally demonstrated that the refractive index can be a valid indicator for oxidation resistance evaluation. The application of dual-power plasma conditions was instrumental in enhancing oxidation resistance. Under these conditions, the refractive index reached approximately 1.90 even at 200℃, comparable to values observed in films deposited at 350℃. These findings provide a basis for predicting oxidation resistance and optimizing low-temperature conditions, with applications in next-generation semiconductor and packaging technologies requiring high reliability.

Ga₂O₃ is an ultra-wide bandgap semiconductor material that offers superior electrical properties for high-voltage power electronics but suffers from poor thermal conductivity compared to conventional semiconductors. To overcome this thermal limitation, we developed Ga₂O₃/4H-SiC heterojunction Schottky barrier diodes that utilize the high thermal conductivity of SiC substrates. Using the aerosol deposition method, we successfully fabricated devices with different Ga₂O₃ film thicknesses (0.8-1.4 μm) and achieved exceptional electrical performance with the 0.8 μm device showing a specific on-resistance of 41 mΩ·cm² and a leakage current as low as 1.26 × 10^-10 A/cm² while maintaining stable operation up to 200℃. The devices demonstrated breakdown voltages reaching 2,365 V and maintained excellent rectification ratios above 1010 even at elevated temperatures. All fabricated devices with different film thicknesses showed consistent high-temperature stability, confirming the effectiveness of the heterojunction approach. These results provide a viable pathway for developing thermally stable, high-performance power devices essential for next-generation electric vehicle and renewable energy applications

Rietveld refinement has become an essential tool for the quantitative analysis of crystal structures in polycrystalline systems using X-ray diffraction data. This tutorial paper focuses on the background, case studies, and practical implementation of Rietveld refinement using the open-source software PROFEX. Key structural parameters, such as lattice constants and phase fractions, can be quantitatively extracted through full-pattern fitting. Case studies involving compositional variation, electric fields, temperature changes, and battery cycling demonstrate the broad applicability of Rietveld refinement in materials science, energy storage, and catalysis. A step-by-step procedure for performing Rietveld refinement is presented using Bi_1/2Na_1/2TiO₃ perovskite ceramic as an example, providing guidance on software installation, preparing crystal structure information files, performing Rietveld refinement, evaluating results using R-factor and χ² values, and summarizing the results. This tutorial aims to improve understanding and accessibility of Rietveld refinement for researchers seeking to investigate structure-property relationships in complex material systems.

NTC (negative temperature coefficient) thermistors are semiconductor ceramics whose resistance decreases with increasing temperature, making them essential components in various temperature sensing applications. Typically, ceramic materials are sintered at high temperatures exceeding 1,150°C. However, in laminated devices incorporating internal electrodes, co-sintering can lead to cracking and mechanical failure due to mismatches in the thermal expansion coefficients between the ceramic layers and metal-based electrodes. Moreover, the use of noble metal electrodes increases production costs. To address these challenges, a low-temperature sintering approach is required. Previous studies have demonstrated that incorporating glass frit can reduce the sintering temperature of ceramics, although this often results in increased electrical resistance. In this study, NiMnCoO₄ (NMC) ceramics, as a representative NTC thermistor composition, were prepared with the addition of 10 wt% glass frit. To mitigate the resulting increase in resistivity, trace amounts (1 wt%) of various metal oxides, including CuO, ZnO, and MnO, were introduced. Among these, the addition of CuO notably decreased both the resistivity and B constant values. In contrast, MnO had little effect on resistivity, while ZnO led to an increase. With respect to the B25/85 constant, samples containing MnO and ZnO exhibited higher values than those without metal oxide additives. These findings indicate that the incorporation of 1 wt% CuO is effective in reducing the increased resistivity in NMC ceramics subjected to low-temperature sintering via glass frit addition.

With the rapid development of digital technologies such as IoT, AI, and big data, electrical energy consumption is rapidly increasing. Electrical facilities that supply electrical energy are operated with high reliability and stability for end-of-life time. In addition, depending on the type of electrical load that consumes electrical energy in various forms, electrical insulation systems deteriorate due to electrical and thermal stress, which reduces electrical and mechanical insulation strength. Due to such continuous stress and electrical transient phenomena, electrical facilities may experience electrical accidents due to electrical insulation breakdown before the expected design lifetime. In addition, periodic inspections according to related regulations must be conducted to prevent unexpected electrical accidents, but this leads to problems in which the electrical facilities cannot be turned off. Therefore, it is believed that an uninterruptible diagnostic judgment technique that determines compliance with related regulations such as electrical facility technology standards, internal wiring regulations, and inspection regulations without turning off the electrical facilities and at the same time detects abnormal conditions of the facilities early, it is possible to prevent electrical accidents and improve the efficiency of electrical facilities. In this paper, we propose an uninterruptible power diagnosis judgment technique that can prevent or reduce electrical accidents in cast-iron transformers by applying judgment criteria of diagnostic sensors for various types of measurement parameters that can diagnose and evaluate the presence or absence of abnormalities in electrical equipment, including partial discharge, and AI algorithms learned from data of diagnostic sensors.