Silicon carbide (SiC) power devices are attracting increasing attention for high-voltage and high-efficiency applications due to their superior material properties. However, achieving an optimal trade-off between specific on-resistance (Ron,sp) and breakdown voltage (BV) remains a key design challenge in planar MOSFET structures. In this study, twodimensional TCAD simulations were conducted to investigate the impact of varying the doping concentrations of the P-well (from 3 × 1017 to 6 × 1017 cm-3) and JFET regions (from 1 × 1016 to 7 × 1016 cm-3) on the electrical characteristics of 2.4 kVclass planar SiC MOSFETs. To maintain comparable BV conditions for 2.4 kV operation, two groups with P-well doping concentrations of 4.5 × 1017 cm-3 and 5.3 × 1017 cm-3 were analyzed and compared. When the P-well and JFET doping concentrations were 4.5 × 1017 cm-3 and 1.5 × 1016 cm-3, respectively, the simulated Ron,sp and BV were 1.41 mΩ·cm2 and 3,150 V. In contrast, with P-well and JFET doping concentrations of 5.3 × 1017 cm-3 and 5.0 × 1016 cm-3, the Ron,sp was reduced to 1.31 mΩ·cm2 while the BV slightly increased to 3,200 V. Based on these results, an optimized device structure was proposed, demonstrating its potential for integration into high-voltage SiC-based power systems. This study provides practical design insights and is expected to contribute to the advancement of wide bandgap semiconductor technologies for next-generation power electronics.
