Dye-sensitized solar cells (DSSCs) suffer from efficiency limitations due to interfacial charge recombination at the TiO₂/dye/electrolyte interface. In this study, aminopropyltrimethoxysilane (APS) was introduced onto nanoporous TiO₂ photoelectrodes via a dip-coating process with controlled coating times to investigate the effect of silanization time on interfacial charge transport behavior. Unlike concentration-driven structural modification, this work focuses on the evolution of the APS-modified interface governed by reaction time. The DSSC with 30 min APS treatment exhibited the highest power conversion efficiency of 5.34%, representing a 19% enhancement compared to the untreated device (4.49%), mainly due to increased short-circuit current density and open-circuit voltage. However, prolonged coating times (2 h and 24 h) resulted in a significant decrease in photocurrent density, leading to reduced device performance despite partial improvement in recombination resistance. These results are attributed to the time-dependent evolution of the APS interfacial layer. At moderate coating time, APS provides effective surface functionalization, enhancing dye adsorption and suppressing interfacial recombination. In contrast, prolonged coating is expected to induce increased surface coverage and silane condensation, which can hinder electron injection and increase charge transport resistance. Therefore, the photovoltaic performance is governed by a trade-off between recombination suppression and charge injection efficiency, controlled by the silanization time. This study highlights the critical role of interfacial reaction kinetics in determining charge transport behavior and provides an effective strategy for optimizing DSSC performance through time-dependent interface engineering.

Renewable energy harvesting technologies, which convert ambient resources such as wind into electrical energy, have attracted significant attention as sustainable power sources for self-powered systems. However, the long-term applicability of wind energy harvesters in remote or extreme environments has not yet been fully discussed, particularly in terms of structural robustness and environmental adaptability. In this study, we designed a double-clamped flutter-type triboelectric generator (DFTEG) for efficient wind energy harvesting and evaluated its output performance under various simulated outdoor conditions. The DFTEG features a modular acrylic frame with a magnet-based assembly for easy maintenance and film replacement, utilizing PTFE films and aluminum electrodes to maximize the charge density difference according to the triboelectric series. Structural optimization revealed that a single-film configuration with a length of 110 mm produced the most stable flutter vibration and a large effective contact area, achieving a maximum open-circuit voltage of 42.28 V and a short-circuit current of 2.89 μA. Furthermore, performance evaluations under various environmental variables, including relative humidity, temperature, and sand particles interference, confirmed consistent electrical output across diverse environmental conditions. These results demonstrate the potential of the proposed DFTEG as an environmentadaptive independent power source capable of stable operation under complex environmental factors.

This paper reviews the energy yield enhancement characteristics of bifacial photovoltaic systems combined with solar tracking, focusing on their performance relative to conventional monofacial fixed-tilt configurations. The fundamental mechanisms of yield improvement are summarized, highlighting the largely additive contributions of solar tracking, which increases front-side irradiance, and bifacial modules, which utilize rear-side reflected and diffuse radiation. Reported results from previous studies indicate that bifacial systems with single-axis tracking typically achieve 25–35% higher annual energy yield compared with standard monofacial fixed-tilt systems, with variations depending on environmental and design conditions. Key design and environmental considerations influencing system performance are discussed to provide practical insights for the application of bifacial tracking systems in utilityscale photovoltaic installations.

This paper proposes a circular sequential lighting control method to reduce current imbalance and luminance deviation among multiple LED modules in AC-powered LED lighting systems. Conventional fixed-sequence lighting control repeatedly prioritizes the same LED modules in every rectified voltage cycle, which leads to unequal current distribution, luminance non-uniformity, and the accelerated degradation of specific modules during long-term operation. To address these limitations, a circular sequential lighting strategy is introduced, in which the lighting order is cyclically rotated at every rectified cycle, ensuring that all LED modules experience equal lighting opportunities. A prototype AC-LED lighting system consisting of four series-connected LED modules was implemented and experimentally evaluated. The results demonstrate that, while the conventional fixed-sequence method produces a maximum average current deviation of up to 1.6 mA among modules, the proposed method equalizes the average current across all modules to approximately 17.1 mA. Furthermore, the flicker index remains at 0.13, which is comparable to that of the conventional method, indicating that luminance uniformity is improved without degradation of optical performance. The proposed circular sequential lighting control effectively distributes electrical stress, enhances luminance uniformity, and improves long-term reliability, making it a practical and efficient solution for high-quality AC-LED lighting applications.

The rapid advancement of large-scale language models and artificial intelligence technologies has highlighted the importance of data processing efficiency. This study outlines a measurement optimization method for high-speed pulse equipment to accurately analyze the operating dynamics of ReRAM, a core hardware component for simulating neural networks. An optimized evaluation methodology combining connection compensation and a dual-channel configuration was established to minimize measurement errors caused by parasitic resistance and capacitance during pulse measurements using the Keithley 4200A-SCS and 4225-PMU modules, and to address HRS/LRS measurement errors caused by mismatches between the measurement range and source limits. The proposed precision measurement guidelines can be applied to the evaluation of semiconductor devices that require pulse measurements, such as transistors and DRAM.

The ability to manipulate and probe biomolecules at the single-molecule level has become an essential approach for understanding molecular interactions, conformational dynamics, and nanoscale transport phenomena. Advances in experimental techniques have enabled precise control of individual molecules with high spatial resolution and piconewton-level force sensitivity. These developments have significantly expanded the capability of studying biomolecular mechanics and dynamics beyond conventional ensemble measurements. A variety of physical strategies have been developed for single-molecule manipulation, including mechanical-force-based approaches, electric-field-driven methods, and nanoscale structural confinement techniques. Mechanical-force-based methods, such as optical tweezers, magnetic tweezers, and atomic force microscopy, enable direct measurement of molecular mechanical responses. Electric-field-based manipulation, represented by dielectrophoresis, allows noncontact control of particles and biomolecules through polarization effects in non-uniform electric fields. In addition, nanopore-based systems employ nanoscale confinement to regulate molecular transport and residence behavior. This review provides an overview of representative single-molecule manipulation techniques based on mechanical, electrical, and structural control and discusses their fundamental principles and implementation strategies.

Long lifetime, low power consumption, and environmental friendliness have enabled light-emitting diode (LED) lighting to rapidly replace conventional light sources such as incandescent and fluorescent lamps. In particular, AC-LED lighting systems can be directly powered by commercial alternating current (AC) sources; however, they suffer from significant luminance deviation caused by uneven current distribution among LED light-emitting modules. This paper proposes a lighting control method that improves flicker performance while maintaining lamp brightness and effectively reduces luminance deviation in AC-LED lighting. The proposed method reduces luminance deviation by controlling the lighting order of multiple LED light-emitting modules. Among four LED modules, only the required number of modules is continuously turned on, and the lighting priority alternates between rectification cycles. Specifically, during odd rectification cycles, LED modules are activated sequentially in ascending order (11→12→13→14), whereas during even rectification cycles, they are activated in descending order (14→13→12→11). By alternately applying continuous lighting control with opposite activation orders, the proposed reverse alternating lighting control method equalizes the current distribution among LED modules. As a result, luminance uniformity is improved, electrical stress concentration on specific modules is reduced, and the operational lifetime of the LED modules is extended compared with the conventional fixed-sequence lighting control method.

Neuromorphic computing, which mimics the energy-efficient parallel processing capabilities of the human brain, has emerged as an alternative to traditional von Neumann architectures that struggle with high power consumption in the era of artificial intelligence (AI). Despite the potential of Si-based neuromorphic chips, they often face fundamental limitations in integration density and biological compatibility, necessitating the development of next-generation devices that can better emulate the ionic signaling of biological systems. This review provides a comprehensive analysis of the recent research trends in artificial synapses and neurons based on organic electrochemical transistors (OECTs), highlighting their unique ability to achieve high transconductance and mixed ionic-electronic conduction at ultra-low operating voltages. We discuss how OECTs successfully replicate diverse synaptic plasticities and complex neuronal spiking behaviors through advanced material engineering and structural optimizations such as vertical architectures. Furthermore, this review discusses the implementation of high-order neural functions, including associative learning and logic operations, which are facilitated by the inherent electrochemical dynamics of organic semiconductors. Finally, overcoming current challenges in reliability and scalability will establish OECTs as a pivotal platform for low-power neuromorphic hardware and bio-integrated electronics.

MoS₂ has attracted significant attention as a next-generation semiconductor material to overcome the physical scaling limits of silicon-based devices due to its atomic thinness and excellent electrical properties. However, high contact resistance and the formation of Schottky barriers resulting from interface defects during the metal deposition process remain major bottlenecks that degrade overall device performance and reliability. In this study, we fabricated MoS₂ FETs by employing Sb₂Te₃, van der Waals (vdW) contacts. Minimized interface inhomogeneity was achieved through a hemispherical stamp-based dry transfer of h-BN for device encapsulation. h-BN encapsulation decreased the hysteresis window in the ±25 V gate voltage range from 17 V to 11.5 V compared to un-capped devices, confirming that charge trapping phenomena induced by external environmental factors were suppressed. Consequently, the dry transfer technique of h-BN using a hemispherical stamp demonstrated in this study provides a potential solution for securing the long-term reliability of MoS₂ devices with vdW contact by minimizing interface contamination.

This review systematically examines the structural characteristics, compositional design strategies, and recent research trends of layered double hydroxides (LDHs), which are recognized as promising electrocatalyst materials in electrochemical nitrate-to-ammonia conversion. Despite the rapid growth in related research, achieving simultaneous high selectivity and efficiency remains a significant technical challenge due to the complex mechanisms of the nitrate reduction reaction (NitRR) and its inherent competition with the hydrogen evolution reaction (HER). In this study, we analyzed the structural contributions of LDH catalysts for maximizing nitrate reduction efficiency and systematically established key catalyst design indicators required to ensure optimal performance. Specifically, we provide a detailed investigation of the physicochemical mechanisms for enhancing NH₃ production by precisely regulating the adsorption energies of reaction intermediates and maximizing charge transfer efficiency through compositional control and defect engineering. Furthermore, we discuss advanced structural design strategies, such as core-shell tandem structures, MOF-derived architectures, and interlayer anion control, as effective methods for enhancing catalytic performance and optimizing mass transport processes. These insights offer a strategic roadmap for designing high-performance LDH catalysts and represent a critical step toward the practical implementation of sustainable green ammonia production systems, particularly for integration into high-efficiency membrane electrode assembly (MEA) technologies.

Silicon carbide (SiC) MOSFETs provide superior performance compared to traditional silicon devices under hightemperature and high-power conditions, making them particularly valuable for power electronics applications requiring highfrequency switching and high-energy efficiency. As the electric vehicle (EV) market expands, these devices are commonly packaged into six-pack modules, which can show their different electrical characteristics between the bare-die device and the package due to packaging that improves heat dissipation and other properties. This study uses bare-die SiC MOSFETs to explore their intrinsic characteristics and evaluate their performance in a half-bridge configuration. A half-bridge circuit was constructed, and performance was assessed by varying driving frequencies (10 kHz and 50 kHz) and adjusting the duty cycle between 20% and 80%. Analysis revealed that, at a fixed switching frequency, the average output voltage and average output current are proportional to the duty cycle.

Organic photovoltaics (OPVs) are attractive candidates for sustainable energy conversion due to their flexibility, lowcost processing, and compatibility with large-area fabrication. However, their efficiency is hindered by interfacial defects and vertical phase separation in the active layer, which induce charge imbalance and recombination losses. This work presents an interfacial engineering approach to overcome these limitations in P3HT:PC₇₀BM-based OPVs. Two key strategies were employed: (i) reducing the post-deposition annealing time of the active layer to suppress PC₇₀BM accumulation at the bottom electrode, and (ii) using a DCB:DCM mixed solvent system to regulate solvent evaporation, thereby promoting uniform film formation during PC₇₀BM overlay deposition. Devices fabricated with these optimizations exhibited notable enhancements, achieving short-circuit current density up to 15.83 mA/cm² and a 58.1% increase in power conversion efficiency compared to control devices. X-ray photoelectron spectroscopy confirmed reduced surface aggregation of PC₇₀BM, while X-ray diffraction indicated improved P3HT crystallinity and molecular ordering. These results highlight the critical role of interfacial and morphological control in enhancing charge separation and transport, offering a practical route toward efficient, reproducible, and stable OPVs.

Humidity monitoring of exhaled breath has emerged as a vital approach for noninvasive respiratory health assessment, underscoring the need for sensitive and reliable humidity sensors. Despite its high conductivity and hydrophilic functional groups, reduced graphene oxide (rGO) often undergoes irreversible moisture adsorption and gradual oxidation by residual water, resulting in sensitivity degradation and long-term instability during cycling. In this study, a montmorillonite/reduced graphene oxide (MMT/rGO) composite is developed as a room-temperature humidity-sensing material, exhibiting an optimized response of 115%, more than 14 times higher than that of pristine rGO. This superior performance originates from the synergistic interaction between the reversible MMT swelling and the conductive rGO network near the electrical percolation transition, which ensures excellent stability and repeatability under repeated humidity cycles. These findings suggest that the MMT/rGO composite provides a cost-effective and biocompatible platform for next-generation wearable humidity sensors capable of continuous respiratory monitoring.

The growing demand for thinner, lighter, and more energy-efficient electronic systems has driven the development of acoustic technologies toward compact and flexible sound generation platforms. Despite significant progress, conventional electromagnetic speakers remain limited by bulky structures, energy losses, and poor compatibility with modern ultrathin devices. In this review, recent advancements in piezoelectric acoustic systems are presented, demonstrating a new generation of speakers capable of producing high-fidelity sound from ultra-slim, lightweight, and mechanically compliant designs. Through refined structural configurations and efficient electromechanical coupling, these piezoelectric exciters achieve strong acoustic output, fast response, and wide frequency operation while drastically reducing component thickness. These exciters also show their suitability for seamless integration into flexible displays, wearable devices, and automotive panels, offering enhanced spatial audio practicality and multifunctional operation, including demonstrative output and sensing. This advancement marks a step toward the convergence of acoustic, haptic, and interactive technologies, for the realization of sustainable and immersive humanmachine interfaces in future electronic and automotive systems.

Silicon carbide (SiC) power devices are attracting increasing attention for high-voltage and high-efficiency applications due to their superior material properties. However, achieving an optimal trade-off between specific on-resistance (Ron,sp) and breakdown voltage (BV) remains a key design challenge in planar MOSFET structures. In this study, twodimensional TCAD simulations were conducted to investigate the impact of varying the doping concentrations of the P-well (from 3 × 10¹⁷ to 6 × 10¹⁷ cm^-3) and JFET regions (from 1 × 10¹⁶ to 7 × 1016 cm^-3) on the electrical characteristics of 2.4 kVclass planar SiC MOSFETs. To maintain comparable BV conditions for 2.4 kV operation, two groups with P-well doping concentrations of 4.5 × 10¹⁷ cm^-3 and 5.3 × 1017 cm^-3 were analyzed and compared. When the P-well and JFET doping concentrations were 4.5 × 10¹⁷ cm^-3 and 1.5 × 10¹⁶ cm^-3, respectively, the simulated Ron,sp and BV were 1.41 mΩ·cm² and 3,150 V. In contrast, with P-well and JFET doping concentrations of 5.3 × 10¹⁷ cm^-3 and 5.0 × 10¹⁶ cm^-3, the Ron,sp was reduced to 1.31 mΩ·cm² while the BV slightly increased to 3,200 V. Based on these results, an optimized device structure was proposed, demonstrating its potential for integration into high-voltage SiC-based power systems. This study provides practical design insights and is expected to contribute to the advancement of wide bandgap semiconductor technologies for next-generation power electronics.

To ensure the long-term reliability of flexible photovoltaic (FPV) modules, it is crucial to develop an effective moisture barrier layer that prevents the infiltration of moisture and oxygen. We developed such a layer composed of parylene (700 nm) and AlOx (70 nm), optimizing its material properties, moisture-blocking performance, and processing conditions. The barrier layer applied to the Ethylene Tetrafluoroethylene (ETFE) substrate demonstrated a water vapor transmission rate (WVTR) of 6.33 × 10^-2 g/m²/day and an average visible light transmittance (AVT) of 85.3% over the 380-780 nm wavelength range. For the FPV module with this barrier, Damp/Heat (DH) reliability testing was conducted at 85℃ and 85% relative humidity for up to 1,000 hours. During testing, the power conversion efficiency (PCE) decreased slightly from 25.4% (0 hr) to 24.7% (1,000 hr), reflecting a minimal reduction of only 0.7%. The primary cause of degradation was identified as a -4% relative change in shortcircuit current density (JSC) before and after DH testing. Consequently, the ETFE/parylene/AlOx multilayer moisture barrier proved highly effective in ensuring the long-term reliability of solar modules.

With the advancement of the information society, the demand for highly integrated and multi-functional electronic devices is rapidly increasing. To meet these demands, high-performance transistors with low power consumption, high-speed operating, and mechanical flexibility are essential. Among various candidates, semiconducting single-walled carbon nanotubes (s-SWCNT)-based transistors, which exhibit intrinsically ambipolar characteristics, have emerged as promising components for CMOS-like circuits. In this study, s-SWCNT were selectively dispersed using rr-P3DDT, a thiophene-based conjugated polymer, and filed-effect transistors (FETs) were fabricated by inducting directional alignment for enhanced charge transport through an off-centered spin-coating process. The electrical characteristics of the fabricated s-SWCNT FETs were evaluated under various thermal annealing conditions (100℃, 150℃, 200℃, and 250℃). Off-centered spin-coated and high temperature annealed s- SWCNT FETs exhibited high field-effect mobilities over 5 cm²/Vs in both p-type and n-type operation, along with ideal Vshaped ambipolar transfer curves. These results indicate a significant enhancement in ambipolar performance due to efficient desorption of residual oxygen and water molecules in active channel via high temperature annealing. Furthermore, CMOS-like inverter circuits demonstrated an ideal inversion voltage (VIN = V_DD/2) and a high voltage gain of approximately 9.5. These findings highlight the potential of SWCNT-based materials for realizing next-generation flexible electronic circuits that combine high-performance, energy efficiency, and simplified solution-processing.

The rapid evolution of wearable technology has driven a surge in demand for sustainable, self-powered electronic devices. Flexible thermoelectric materials, capable of converting body heat into electricity, have emerged as a promising solution for powering next-generation wearables. This review comprehensively examines recent progress in organic (polymer-based) and hybrid thermoelectric materials, focusing on their design, fabrication, and integration into flexible architectures suitable for conformal contact with human skin. Key developments include advanced doping strategies, post-treatment techniques, and composite engineering, particularly in conductive polymers such as PEDOT: PSS and P3HT, which have significantly enhanced power factors and mechanical flexibility. Additionally, the integration of high-performance inorganic materials into stretchable systems has further elevated device efficiency and durability. The review highlights breakthroughs, ongoing challenges, and future opportunities in realizing practical, scalable, and high-efficiency wearable thermoelectric generators for sustainable energy harvesting applications.

With the rapid development of digital technologies such as IoT, AI, and big data, electrical energy consumption is rapidly increasing. Electrical facilities that supply electrical energy are operated with high reliability and stability for end-of-life time. In addition, depending on the type of electrical load that consumes electrical energy in various forms, electrical insulation systems deteriorate due to electrical and thermal stress, which reduces electrical and mechanical insulation strength. Due to such continuous stress and electrical transient phenomena, electrical facilities may experience electrical accidents due to electrical insulation breakdown before the expected design lifetime. In addition, periodic inspections according to related regulations must be conducted to prevent unexpected electrical accidents, but this leads to problems in which the electrical facilities cannot be turned off. Therefore, it is believed that an uninterruptible diagnostic judgment technique that determines compliance with related regulations such as electrical facility technology standards, internal wiring regulations, and inspection regulations without turning off the electrical facilities and at the same time detects abnormal conditions of the facilities early, it is possible to prevent electrical accidents and improve the efficiency of electrical facilities. In this paper, we propose an uninterruptible power diagnosis judgment technique that can prevent or reduce electrical accidents in cast-iron transformers by applying judgment criteria of diagnostic sensors for various types of measurement parameters that can diagnose and evaluate the presence or absence of abnormalities in electrical equipment, including partial discharge, and AI algorithms learned from data of diagnostic sensors.

Molybdenum disulfide (MoS₂) is a promising 2D semiconductor material for low-power electronics due to its excellent electrical properties and compatibility with conventional processes. In this study, MoS₂ thin films deposited by RF sputtering were etched using Cl₂/Ar plasma in an ICP system. The effects of Cl₂ gas ratio, RF power, and process pressure on etch rate and MoS₂/SiO₂ selectivity were investigated. Optimal results were obtained at 25% Cl₂, achieving ~38 nm/min etch rate and selectivity of 3.0. Increased source power improved both etch rate and selectivity, while higher bias power enhanced etching but reduced selectivity due to stronger ion bombardment. XPS analysis confirmed Mo－Cl and S－Cl bond formation after etching, indicating chemical reactions and some by-product residue. These results provide insights into optimized plasma etching of sputtered MoS₂ films for advanced 2D device fabrication

The continuous and long-lasting monitoring of physiological signals induced from the human body is crucial for health monitoring, disease diagnosis, and treatment. In this study, we have reported the Seebeck effect-based flexible selfpowered temperature sensor which can convert the electric signals from lateral temperature difference. For demonstrating temperature sensor arrays, the p-type thermoelectric (TE) composite films were fabricated by dispersing the Bi_0.5Sb_1.5Te₃ (BST) powders inside poly-vinylidene fluoride matrix and subsequently attached to the patterned electrode foils. The inorganic BST powders-embedded TE composite films with activated area of 0.5 × 1 cm² harvest a maximum voltage of 1.7 mV, a maximum current of 5.6 mA, and an output power of 2.6 nW from the temperature gradient (ΔT) of 20 K. Finally, the fabricated selfpowered temperature sensor array well detected the pattern images of external thermal source of ΔT = 20 K. This study manifests flexible temperature sensor array which paves the way for further advancements in this field.

SMD-type 660 nm wavelength semiconductor laser diode device is fabricated using silicon resin molding technology and fabricated a BT resin printed circuit board. BT resin electrode structure printed circuit boards with soldering electrode pads and through holes for heat dissipation were fabricated. The SMD process is an injection molding technique in which the chip is molded from silicon material and then cut by a dicing process to complete the beam emission surface. The fabricated SMD-type semiconductor laser diode exhibits a good near-field beam pattern with no scattering/dispersion caused by the printed circuit board or silicon molding in the emitted laser beam, or reflections around the chip. It was also confirmed that the heat generated at 20 mA operation has good heat dissipation characteristics through the through-hole heat dissipation structure.

Ceramic powder is an important material used for various purposes in advanced industries, and the fundamental properties of ceramic powder such as particle size, particle size distribution, and flow properties play a decisive role in determining the quality and performance of the final product. In general, these properties have been evaluated through particle size and shape analysis. However, these methods have limitations in providing a comprehensive understanding phenomena related to powder flow, coagulation, and wear. Consequently, performance evaluation based on the analysis of powder flow properties has been increasingly adopted. Previously, flow properties were primarily assessed using funnel-based methods. However, these methods have limitations, as they are challenging to apply to powders smaller than a few micrometers or those with strong coagulation tendencies, and they also suffer from low reliability. To address these issues, this paper introduces a novel piece of equipment that measures flow properties using image analysis and presents various parameters for static and dynamic flow behavior based on this technique. The proposed equipment offers exceptional versatility, as it can be applied to all types of ceramic powders regardless of their size or shape. The principles and measurement methods of the equipment are demonstrated through static and dynamic image analysis of ceramic powders with varying sizes and shapes used as examples.

This review examines the principles, limitations, and recent advancements in elastic modulus measurement using nanoindentation. The importance of accurate contact area prediction is discussed, along with the Oliver-Pharr method and its limitations. The Continuous Stiffness Measurement (CSM) technique is presented as a significant improvement, allowing continuous measurement of mechanical properties throughout the indentation process. For ultra-thin films, the Li and Vlassak method, which incorporates Yu's solution and the concept of effective thickness, is highlighted as a means to correct for substrate effects. Recent developments in artificial neural network-based models for elastic modulus prediction are also explored. These advancements have greatly expanded the applicability of nanoindentation in semiconductor and MEMS device reliability assessment.

Neuromorphic computing, inspired by the biological mechanisms of neural signal transmission, has emerged as a promising technology for efficient and parallel data processing with minimal power consumption. In this study, we developed floating-gate organic thin-film transistors (OTFTs) with self-assembled monolayer (SAM)-based tunneling layers to mimic the characteristics of artificial synapses. The tunneling layers were formed using mixed phosphonic acid SAMs with varying ratios of octadecylphosphonic acid (ODPA) and 12-pentafluorophenoxydodecylphosphonic acid (PFPA). The influence of these ratios on the memory and neuromorphic characteristics of the devices was systematically evaluated. Our results revealed that the ODPA ratio significantly impacts the hysteresis window, with higher ODPA content yielding improved memory characteristics. Conversely, the PFPA : ODPA ratio of 2:1 exhibited the lowest non-linearity (NL = 0.48), demonstrating the potential for highly accurate weight updates in neuromorphic devices. Additionally, pulse width modulation studies showed that a pulse width of 100 ms optimized the linearity and stability of long-term potentiation (LTP) and depression (LTD) characteristics. The combination of sol-gel processed AlOx as a floating-gate layer and tailored SAM-based tunneling layers allowed for precise control of device performance. These findings highlight the importance of molecular engineering in designing SAM layers to balance memory retention and neuromorphic functionality. This study provides a pathway for advancing organic floating-gate transistors as a core component in next-generation neuromorphic computing systems.

Post-metallization annealing (PMA) has been employed in silicon-based CMOS fabrication to enhance MOSFET reliability and performance. However, although deuterium annealing can reduce interface traps between the Si and SiO₂ gate dielectric, it remains insufficient to fully passivate these traps. In this context, a multiple PMA process, including additional hydrogen annealing, is proposed to further reduce dangling bonds. Silicon-based MOSFETs are fabricated to verify the proposed annealing process architecture. Electrical characterization of the threshold voltage (VTH), subthreshold swing (SS), on-state current (ION), and carrier mobility (μ_n) is conducted to investigate the impact of the multiple PMA. This study provides a guideline for PMA in MOSFET fabrication, with improvements in both performance and reliability.

Piezoelectric materials, which convert mechanical energy into electrical signals, are widely used in various industrial applications such as sensors, actuators, and energy harvesting devices. This study aims to enhance the performance of Pb(Mg_1/3Nb_2/3)O₃-Pb(Al_1/2Nb_1/2)O₃-Pb(Zr_0.52Ti_0.48)O₃ (PMN-PAN-PZT) piezoelectric ceramics by investigating the effects of varying PAN and PMN content and adding Nb₂O₅ on their piezoelectric properties. The results show that with 2 mol% of PMN and PAN, the morphotropic phase boundary (MPB) region exhibits the highest piezoelectric properties. Additionally, excess Nb₂O₅ positively influenced the piezoelectric properties, maximizing electro-mechanical coupling factor (k_p=63%, d₃₃=440 pC/N). These findings contribute to developing next-generation high-performance piezoelectric materials, with potential for improved efficiency and performance in various industries.

We propose a real-time information propagation arithmetic neural network (PANN) that minimizes the loss of power generation output of the system in the event of sudden changes in the module due to strong external typhoons or earthquakes at the solar power generation facility site. In addition, we propose a new double-sided module reflector that can reduce the local loss of power generation efficiency of the single-sided module reflector that is currently widely distributed, as well as the environmental pollution and inconvenience of maintenance work of the existing double-sided module. We present a computational network that can detect the faulty solar panel in real-time by checking the fault status of the installed solar panel and using a real-time computation method through a node-to-node diffusion method. In particular, this method recognizes the power loss part due to sudden changes in the module in real time and can take emergency measures for various nonlinear field facilities through a neural structure that finds the optimal distance up, down, left, and right. To confirm the characteristics of the loss reduction control of the field facility, we confirmed that the system was configured as a 7-degree-of-freedom control model using the PANN neural network learning structure method and improved the power generation output. PANN (Propagation Arithmetic Neural Networks) and various module systems are proposed for the real-time recovery of faulty solar panels and improving module system efficiency.

Al-Mo thin films were fabricated using combinatorial sputtering system to realize highly sensitive surface acoustic wave (SAW) devices. The Al-Mo sample library was grown with various chemical compositions and electrical resistivities, which provided important information for selecting the most suitable materials for SAW devices. As the SAWs generated from piezoelectric materials are significantly affected by the resistivity and density of the interdigital transducer (IDT) electrodes, three types of Al-Mo thin films with different Al contents were fabricated. The thickness of the Al-Mo thin film used in the SAW-IDT electrode was fixed at 150 nm. As the Al content of the Al-Mo thin film decreased from 81.2 to 30.3 at%, the resistivity decreased slightly from 5.43±0.15 to 4.87±0.1×10^-5 Ω-cm, whereas the calculated density increased significantly from 4.1 to 7.9 g/㎤. The SAW device composed of Al-Mo IDT electrodes resonated at 143 MHz without frequency shifts; however, the selectivity of the resonant frequency and insertion loss deteriorated as the Al content decreased. This suggest that the resonant characteristics of the SAW devices fabricated with Al-Mo thin films were more strongly influenced by the material density rather than the electrical properties of the IDT electrodes.

This study investigates the effects of chemical etching for anti-glare (AG) treatment and the subsequent deposition of a TiZrO₂/SiO₂ double-layer anti-reflection (AR) coating on glass surfaces. The AG treatment was performed using ammonium fluoride in gel form via screen printing, followed by electron beam deposition of SiO₂/TiZrO₂ layers. The surface roughness, optical transmittance, and refractive index were analyzed. The results revealed that while the surface roughness increased with larger screen patterns during the AG treatment, it was reduced by the deposition of the AR layers. Additionally, the gloss caused by external light was higher with lower surface roughness, but it was effectively reduced by the AR coating. The optical reflectance showed minimal changes during the AG treatment, remaining similar to that of bare glass substrates. However, the AR coating significantly decreased reflectance. The combination of AG treatment and AR coating improved optical transmittance and reduced gloss, making this method beneficial for enhancing visibility in automotive displays. The findings suggest that this approach can mitigate the impact of external light and improve the clarity of displayed information, making it suitable for automotive display applications.