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"MEMS"

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"MEMS"

The Electric Control Method on the Packaging Technology for Non-Conductive Materials Using the Surface Processing Cavity Pressure Sensor
Sun-jong Lee, Jong-chang Woo
J Electr Electron Mater 2020;33(5):350-354.   Published online September 1, 2020
DOI: https://doi.org/10.4313/JKEM.2021.33.5.3
In this study, a pressure sensor for each displacement was fabricated based on the silicon-based pressure sensor obtained through simulation results. Wires were bonded to the pressure sensor, and a piezoresistive pressure sensor was inserted into the printed circuit board (PCB) base by directly connecting a micro-electro-mechanical system (MEMS) sensor and a readout integrated circuit (ROIC) for signal processing. In addition, to prevent exposure, a non-conductive liquid silicone was injected into the sensor and the entire ROIC using a pipette. The packaging proceeded to block from the outside. Performing such packaging, comparing simple contact with strong contact, and confirming that the measured pulse wavelength appears accurately.
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A Study on the Hermetic Method for Packaging of Implantable Medical Device
Jae-soon Park, Sung-il Kim, Eung-bo Kim, Young-hwan Kang, Sung-hwan Cho, Yeun-ho Jounga
J Electr Electron Mater 2017;30(7):407-412.   Published online July 1, 2017
This paper introduces a biocompatible packaging system for implantable medical device having a hermetic sealing, such that a perfect physical and chemical isolation between electronic medical system and human body (including tissue, body fluids, etc.) is obtained. The hermetic packaging includes an electronic MEMS pressure sensor, power charging system, and bluetooth communication system to wirelessly measure variation of capacitance. The packaging was acquired by Quartz direct bonding and CO2 laser welding, with a size of width 6 cm × length 10 cm × height 3 cm. Hermetic sealing of the packaged system was tested by changing the pressure in a hermetic chamber using a precision pressure controller, from atmospheric to 900 mmHg. We found that the packaged system retained the same count or capacitance values with sensor 1 - 25,500, sensor 2 - 26,000, and sensor 3 - 20,800, at atmospheric as well as 900 mmHg pressure for 5 hours. This result shows that the packaging method has perfect hermetic sealing in any environment of the human body pressure.
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Thin Films and Sensors : Development of Pressure Sensor for Identifying Guinea Pig`s Large Intestinal Motility Caused by Drug
Jae Soon Park, Jung Ho Park, Eung Bo Kim, Sung Hwan Cho, Su Jeong Jang, Yeun Ho Joung
J Electr Electron Mater 2016;29(1):23-29.   Published online January 1, 2016
In this paper, in order to quantify the peristalsis occurrence in a guinea pig`s large intestine, a miniaturized air-gap capacitive pressure sensor was fabricated through micro-electro-mechanical system (MEMS). The proposed pressure sensor is a two-layered biocompatible polyimide substrate consisting of an air-gap capacitive plates between the substrates. The proposed pressure sensor was designed with a careful consideration of the structure and motility mechanism of the guinea pig`s large intestine. Artificial pellets were mounted on a prototype pressure sensor to provide some redundancies in the form of size and shape of the guinea pig feces. Capacitance of a prototype sensor was recorded to be 2.5 ~ 3 pF. This capacitance value was later converted to count value using a lab fabricated data conversion system. Sensitivity of the pressure sensor was recorded to be below 1 mmHg per atmospheric pressure. During in vivo testing, artificial peristalsis caused by drug injection was measured by inserting the prototype pressure sensor into the guinea pig’s large intestine and pressure data obtained due to artificial peristalsis was graphed using a labview program. The proposed pressure sensor could measure the pressure changes in the proximal, medial, and distal parts of the large intestine. The results of the experiment confirmed that pressure changes of guinea pig`s large intestine was proportional to the degree of drug injection.
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Energy Materials : A Study on the Fabrication and Characterization of Micro Pb(Zr,Ti)O3Film Piezoelectric Cantilever Using MEMS Process for Energy Harvesting
Jun Myung Lee, In Woo Chun, Moon Keun Kim, Kwang Ho Kwon, Hyun Woo Lee
J Electr Electron Mater 2013;26(11):831-835.   Published online November 1, 2013
In this study, we fabricated a micro Pb(Zr,Ti)O3 (PZT) film piezoelectric cantilever with a Si proof mass and dual beams through MEMS process. The size of the beam and the integrated Si proof mass were about 4,320 μm × 290 μm × 12 μm and 1,380 μm × 880 μm × 450 μm each. To reduce the air damping and have the larger displacement of dual beams was used for design. After mounting micro PZT film piezoelectric cantilever on shaker, we measured the resonance frequency and a output voltage while making resonant frequency changed. The resonant frequency and the highest average power of the cantilever device were 110.2 Hz and 0.36 μW each, at 0.8 g acceleration and 23.7 kΩ load resistance,respectively.
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Development of Pressure Sensor on Polymer Substrate for Real-time Pulse and Blood Pressure Measurements
Jin Tae Kim, Sung Li Kim, Yeun Ho Joung
J Electr Electron Mater 2013;26(9):669-676.   Published online September 1, 2013
In this study, we introduce a polymer(polyimide) based pressure sensor to measure real-time heart beat and blood pressure. The sensor have been designed with consideration of skin compatibility of material, cost effectiveness, manufacturability and wireless detection. The designed sensor was composed of inductor coils and an air-gap capacitor which generate self-resonant frequency when electrical source is applied on the system. The sensor was obtained with metalization, etching, photolithography, polymer adhesive bonding and laser cutting. The fabricated sensor was shaped in circular type with 10mm diameter and 0.45 mm thickness to fit radial artery. Resonant frequencies of the fabricated sensors were in the range of 91∼96 MHz on 760 mmHg pressurized environment. Also the sensor has good linearity without any pressure-frequency hysteresis. Sensitivity of the sensor was 145.5 kHz/mmHg and accuracy was less than 2 mmHg. Real-time heart beat measurement was executed with a developed hand-held measurement system. Possibility of real-time blood pressure measurement was showed with simulated artery system. After installation of the sensor on skin above radial artery, simple real blood pressure measurement was performed with 64 mmHg blood pressure variation.
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Design and Fabrication of Implantable LC Resonant Blood Pressure Sensor
Jin Tae Kim, Sung Il Kim, Yeun Ho Joung
J Electr Electron Mater 2013;26(3):171-176.   Published online March 1, 2013
In this paper, we present a MEMS (micro-electro-mechanical system) implantable blood pressure sensor which has designed and fabricated with consideration of size, design flexibility, and wireless detection. Mechanical and electrical characterizations of the sensor were obtained by mathematical analysis and computer aided simulation. The sensor is composed of two coils and a air gap capacitor formed by separation of the coils. Therefore, the sensor produces its resonant frequency which is changed by external pressure variation. This frequency movement is detected by inductive coupling between the sensor and an external antenna coil. Theoretically analyzed resonant frequency of the sensor under 760 mmHg was calculated to 269.556 MHz. Fused silica was selected as sensor material with consideration of chemical and electrical reaction of human body to the material. 2 mm × 5 mm × 0.5 mm pressure sensors fitted to radial artery were fabricated on the substrates by consecutive microfabrication processes: sputtering, etching, photolithography, direct bonding and laser welding. Resonant frequencies of the fabricated sensors were in the range of 269∼284 MHz under 760 mmHg pressure.
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Thin Films and Sensors : Real-time Blood Pressure Monitoring in Porcine Tibial Artery Using LC Resonant Pressure Sensor
Won Seok Choi, Jin Tae Kim, Yeun Ho Joung
J Electr Electron Mater 2012;25(6):445-450.   Published online June 1, 2012
We have developed an implantable wireless sensor for real time pressure monitoring of blood circulation system. MEMS (micro-electro-mechanical system) technology was adopted as a sensor development method. The sensor is composed of photolithographically patterned inductors and a distributed capacitor in gap between the inductors. A resulting LC resonant system produces its resonant frequency in range of 269 to 284 MHz at 740 mmHg. To read the resonant frequency changed by blood pressure variation, we developed a custom readout system based on a network analyzer functionality, The bench-top testing of the pressure sensors showed good mechanical and electrical functionality. A sensor was implanted into tibial artery of farm pig, and interrogated wirelessly with accurate readings of blood pressure. After 45 days, the sensor`s electrical response and histopathology were studied with good frequency reading and biocompatibility.
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Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high t emperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.
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Energy Materials : A Study on Energy Harvester with Cantilever Structure Using PZT Piezoelectric Material
Doo Yeol Cha, Soo Jin Lee, Sung Pil Chang
J Electr Electron Mater 2011;24(5):416-421.   Published online May 1, 2011
Nowadays, the increasing demands upon mobile devices such as wireless sensor networks and the recent advent of low power electrical devices such as MEMS make such renewable power sources attractive. A vibration-driven MEMS lead zirconate titanate Pb(Zr,Ti)O3 (PZT) cantilever device is developed for energy harvesting application. This paper presents a piezoelectric based energy harvester which is suitable for power generating from conventional vibration and has in providing energy for low power electronic devices. The PZT cantilever is used d33 mode to get the electrical power. The PZT cantilever based energy harvester with the dimension of 7 mm×3 mm×0.03 mm is fabricated using micromachining technologies. This PZT cantilever has the mechanical resonance frequency with a 900 Hz. With these conditions, we get experimentally the 37 uW output power from this device with the application of 1g acceleration using the 900 Hz vibration. From this study, we show the feasibility of one of energy harvesting candidates using PZT based structure. This PZT energy harvester could be used for various applications such a batteryless micro sensors and micro power generators.
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Semiconduclor : A Researching about Reducing Leakage Current of Polycrystalline Silicon Thin Film Transistors with Bird`s Beak Structure
Jin Min Lee
J Electr Electron Mater 2011;24(2):112-115.   Published online February 1, 2011
To stabilize the electric characteristic of Silicon Thin Film Transistor, reducing the current leakage is most important issue. To reduce the current leakage, many ideas were suggested. But the increse of mask layer also increased the cost. On this research Bird`s Beak process was use to present element. Using Silvaco simulator, it was proven that it was able to reduce current leakage without mask layer. As a result, it was possible to suggest the structure that can reduce the current leakage to 1.39nA without having mask layer increase. Also, I was able to lead the result that electric characteristic (on/off current ratio) was improved compare from conventional structure.
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Nano Materials and Devices : A Novel KOH Wet Etching Technique for Ultrafine Nanostructure Formation
Chan Min Kang, Jung Ho Park
J Electr Electron Mater 2011;24(2):156-161.   Published online February 1, 2011
The present study introduces a novel wet etching technique for nanostructure fabrications which usually requires low surface roughness. Using the current method, acquired profiles were smooth even in the nanoscale, which cannot be easily achieved with conventional wet or dry etching methods. As one of the most popular single crystal silicon etchant, potassium hydroxide (KOH) solution was used as a base solvent and two additives, antimony trioxide (Sb2O3) and ethyl alcohol were employed in. Four experimental parameters, concentrations of KOH, Sb2O3, and ethyl alcohol and temperature were optimized at 60 wt.%, 0.003 wt.%, 10 v/v%, and 23℃, respectively. Effects of additives in KOH solution were investigated on the profiles in both (110) and (111) planes of single crystal silicon wafer. The preliminary results show that additives play a critical role to decrease etch rate significantly down to ~2 nm/min resulting in smooth side wall profiles on (111) plane and enhanced surface roughness.
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Characteristics of Surface Micromachined Capacitive Pressure Sensors for High Temperature Applications
Jeong Hwan Seo, Sang Soo Noh, Kwang Ho Kim
J Electr Electron Mater 2010;23(4):317-322.   Published online April 1, 2010
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Design of Micro-structured Small Scale Energy Harvesting System for Pervasive Computing Applications
Chul Hong Min, Tae Seon Kim
J Electr Electron Mater 2009;22(11):918-924.   Published online November 1, 2009
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Demonstration of MEMS Inductor on the LTCC Substrate
J Electr Electron Mater 2007;20(12):1049-1055.   Published online December 1, 2007
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Development of 121 pins/mm2 High Density Probe Card using Micro-spring Architecture
J Electr Electron Mater 2007;20(9):749-755.   Published online September 1, 2007
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Growth of Polycrystalline 3C-SiC Thin Films using HMDS Single Precursor
J Electr Electron Mater 2007;20(2):156-161.   Published online February 1, 2007
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A Study on Tribological Properties of Diamond-Like Carbon Thin Film for the Application to Solid Lubricant of MEMS Devices
J Electr Electron Mater 2006;19(11):1010-1013.   Published online November 1, 2006
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Fabrication and Characterization of 32×32 Silicon Cantilever Array using MEMS Process
J Electr Electron Mater 2006;19(10):894-900.   Published online October 1, 2006
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Physical Characteristics of Polycrystalline 3C-SiC Thin Films Grown by LPCVD
J Electr Electron Mater 2006;19(8):732-736.   Published online August 1, 2006
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A Study on Detailed Structural Variation of Diamond-Like Carbon Thin Film by a Novel Raman Mapping Method
J Electr Electron Mater 2006;19(7):618-623.   Published online July 1, 2006
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Fabrication and Characterization of Thermal Probe Array on SOI Substrates
J Electr Electron Mater 2005;18(11):990-995.   Published online November 1, 2005
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Reactive ion Etching Characterization of SiC Film Deposited by Thermal CVD Method for MEMS Application
Gi Yong Choe, Deog Gyun Choe, Ji Yeon Park, Tae Song Kim
J Electr Electron Mater 2004;17(3):299-304.   Published online March 1, 2004
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Direct Bonding Characteristics of 2˝ 3C-SiC Wafers for Harsh Environment MEMS Applications
Gwi Sang Jeong
J Electr Electron Mater 2003;16(8):700-704.   Published online August 1, 2003
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MEMS-based Micro Fluxgate Sensor Using Solenoid Excitation and Pick-up Coils
Kyoung Won Na, Hae Seok Park, Dong Sik Shim, Won Youl Choi, Jun Sik Hwang, Sang On Choi
J Electr Electron Mater 2003;16(2):120-124.   Published online February 1, 2003
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Wafer Level Packaging of RF-MEMS Devices with Vertical Feed-through
Yong Gug Kim, Yun Gwon Park, Jae Gyeong Kim, Byeong Gwon Ju
J Electr Electron Mater 2003;16(12s):1237-1241.
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Development of Trenched SOI 1×2 Thermo-Optic Switch For Improvement of Thermal Diffusion Effect
Jong Dae Park, Dong Su Seo, Gi Su Lee
J Electr Electron Mater 2003;16(12s):1255-1260.
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