As technologies such as artificial intelligence, autonomous driving, the Internet of Things, wearable electronics, and edge computing continue to spread in the era of the Fourth Industrial Revolution, the importance of hardware security for the safe storage, transmission, and processing of large volumes of data has grown substantially. One of the key components of such security systems is the true random number generator (TRNG), which produces unpredictable random numbers for cryptographic use. In recent years, research on TRNGs has increasingly moved beyond conventional CMOS-based approaches toward semiconductor devices built from emerging materials. These material-based TRNGs offer several advantages, including high integration density, low power consumption, compact form factors, and strong suitability for next-generation edge and IoT environments, because they can directly exploit the intrinsic stochasticity of the device itself as an entropy source. In this review, recent studies on TRNGs based on emerging material-based semiconductor devices are examined from the perspectives of entropy sources, device structures, randomness validation, and wearable/flexible extensions. By bringing together the key physical mechanisms, device platforms, evaluation criteria, and prospects for wearable and flexible electronics in edge and IoT environments, this review aims to provide a useful framework for future research on hardware security devices.

Two-dimensional van der Waals (2D vdW) magnets have attracted enormous attention as an emerging material platform for magnetism, spintronics, and multifunctional applications. Their single-crystalline layered structures, layer-number controllability, and unique 2D properties provide unique opportunities that are difficult to achieve in conventional magnetic materials. However, the discovery and development of new 2D magnetic compounds require considerable time and effort, and only a limited number of these materials have been reported to be suitable for practical use. Therefore, materials engineering based on already established 2D vdW magnets has become an important research direction to explore new characteristics and find a practical route for device applications. This review summarizes recent materials engineering pathways for 2D vdW magnets. The main contents focus on the engineering strategy through electrostatic, chemical, lattice, symmetry, and heterostructure ways. These approaches provide practical design routes for tailoring magnetic properties beyond intrinsic 2D vdW magnets. Further progress will require broader application to various types of materials and delicate optimization that connects expanding fundamental magnetism with electromagnetic device applications.

X-ray photon correlation spectroscopy (XPCS) provides access to nanoscale dynamics, yet practical approaches for interpreting its data remain limited. This tutorial presents a systematic framework for XPCS data analysis, illustrated using measurements performed at the NSLS-II CHX beamline. The fundamental concepts of speckle pattern and the intensity autocorrelation function are introduced, followed by ferroelectric case studies demonstrating how polarization switching and phase transition dynamics can be extracted from XPCS measurements. The influence of the probed q-range experimental conditions such as X-ray transmittance is examined for data interpretation. These elements are consolidated into practical guidelines for the reliable analysis of XPCS data.

The effects of BaZrO₃ addition on the structural and electrical properties of BaTiO₃-based base-metal-electrode (BME) multilayer ceramic capacitor (MLCC) ceramics were investigated. Dielectric compositions containing 0–9 wt% BaZrO₃ were fabricated using a conventional MLCC process, and their crystal structure, dielectric behavior, temperature stability, frequency stability, and insulation resistance were evaluated. X-ray diffraction and Rietveld refinement confirmed the formation of a single-phase perovskite structure for all compositions. Increasing BaZrO₃ content resulted in a systematic shift of diffraction peaks toward lower angles and an increase in unit-cell volume from 64.61 to 66.05 ų, indicating successful Zr incorporation into the BaTiO₃ lattice. The dielectric permittivity increased with BaZrO₃ addition and reached a maximum value of approximately 2,110 at 6 wt%, while dielectric loss decreased significantly. Capacitance stability against temperature and frequency variations was markedly improved with increasing BaZrO₃ content. In addition, insulation resistance increased substantially over the investigated temperature range, demonstrating enhanced electrical reliability.

The phase transition of Li₃PO₄ solid electrolyte for secondary batteries in vacuum has been studied by using real-time synchrotron X-ray scattering. According to the vacuum heating results, the crystal β-Li₃PO₄ phase was stable only from room temperature to 400°C. The crystal γ-Li₃PO₄ phase appeared at 410°C and the crystal β-Li₃PO₄ phase completely disappeared at 430°C. The transition from the β-Li₃PO₄ to the γ-Li₃PO₄ phases occurred primarily at 410°C, which is 40°C lower than the transition temperature of 450°C in air. The decrease in the phase transition temperature in vacuum, compared to that in air, is attributed to a relatively high concentration of oxygen vacancies. As the isothermal annealing time at 390°C was increased to 8 hours, the β-Li₃PO₄ phase was completely transitioned into the γ-Li₃PO₄ phase. Our study revealed the detailed transition behavior from the β-Li₃PO₄ to the γ-Li₃PO₄ phases during real-time annealing in vacuum.

In this study, we systematically investigated the effects of thermal atomic layer deposition (ALD) conditions on the electrical characteristics of conductive-filament-based volatile threshold switching memristors with a Pt/Al₂O₃/Ag structure. Although volatile threshold switching memristors have attracted significant attention for neuromorphic computing applications such as spiking neural networks, the impact of dielectric deposition conditions on their switching behavior remains relatively unexplored. The number of ALD cycles was varied from 40 to 200, and the deposition temperature was varied from 50 to 250°C to evaluate their effects on threshold voltage (V_th), off-state resistance (R_off), and device yield. Devices fabricated using 75–150 ALD cycles showed clear volatile threshold switching behavior with relatively high device yield, whereas excessively low or high cycle numbers resulted in short-type and open-type failures, respectively. In addition, V_th and R_off tended to increase at higher deposition temperatures, while the device yield significantly degraded above 150°C. These results indicate that the number of ALD cycles and the deposition temperature define a critical process window for achieving volatile threshold switching while suppressing both short-type and open-type failures. This study provides practical guidelines for optimizing dielectric ALD conditions in conductive-filament-based volatile threshold switching memristors for future neuromorphic hardware applications.

The 0.2Pb(Zn_1/3Nb_2/3)O₃-0.8Pb(Zr_0.5Ti_0.5)O₃ (0.2PZN-0.8PZT) ceramic system exhibits excellent piezoelectric properties; however, its high sintering temperature (~1,250°C) causes severe PbO volatilization, increases processing cost, and limits co-firing with low-melting-point electrodes in multilayer devices. In this study, LiBiO₂ was introduced as a sintering aid to enable lowtemperature densification of 0.2PZN–0.8PZT ceramics. The optimal composition of x = 0.3 mol% sintered at 1,050°C achieved d₃₃ = 367 pC/N, k_p = 0.54, and ε^T₃₃/ε₀ = 1,643. The Curie temperature was also enhanced to 347.8°C, compared with 297.2°C for the reference specimen sintered at 1,250°C. These results demonstrate that LiBiO₂ addition enables a 200°C reduction in sintering temperature while maintaining piezoelectric performance and improving thermal stability.

Metal sacrificial-layer-assisted transfer is a promising strategy for transferring thermally annealed thin films onto flexible polymer substrates without exposing the receiver substrate to thermal damage. However, stable release of the annealed thin-film stack remains challenging because high-temperature annealing can alter the etching behavior of the sacrificial metal layer and the protective oxide layer. In this study, we propose a thin-film transfer process using a Ni metal sacrificial layer and etch access holes, in which an SU-8/Ti/SiO₂ transferable stack was fabricated on a rigid sapphire donor substrate, annealed at 400–700°C, selectively released by Ni etching, and transferred onto a flexible PET receiver substrate. As the annealing temperature increased from 400 to 700°C, the SiO₂ etch rate decreased from 6.8–6.96 to 2.61–3.83 nm/s, while the Ni release time increased from 72–77 to 82–95 min; nevertheless, the transferable stack was successfully transferred under all process conditions with image-based transfer yields of 58.81–82.76%, with the highest yield obtained for the 200 nm Ni sacrificial layer annealed at 550°C. These results demonstrate the process feasibility of the proposed metal sacrificial-layer and etch-access-hole-based transfer approach for transferring thermally annealed thin-film structures from rigid donor substrates to flexible receiver substrates.

Multilayer ceramic batteries (MLCBs) have attracted increasing attention as compact all-solid-state energy-storage devices that can be manufactured using multilayer ceramic processing technologies. In this study, an MLCC-compatible fabrication process for oxide-based MLCBs was developed using Li₁₊ₓAlₓTi₂₋ₓ(PO₄)₃ (LATP) solid electrolytes, Li₃V₂(PO₄)₃ (LVP) cathodes, and Cu current collectors. Commercial LATP powders were evaluated in terms of particle-size distribution, phase purity, thermal stability, and ionic conductivity. The selected LATP powder was subsequently employed for tape-cast green-sheet fabrication, and the effects of polyvinyl butyral (PVB) binder content on slurry rheology and sheet microstructure were investigated. An optimized binder composition containing 11 wt% PVB (BM-2/BH-3 = 3:7) provided improved processability and microstructural uniformity. Drying conditions during sequential electrode printing were also optimized to suppress sheet warpage and improve multilayer registration. Thermogravimetric and differential thermal analyses (TG–DTA) were used to establish an optimized two-step debinding and co-firing process under a controlled reducing atmosphere. The resulting multilayer structures exhibited uniform densification without significant blistering, delamination, or interfacial defects. Charge–discharge measurements confirmed that electrochemical functionality was retained after the complete manufacturing process, yielding a discharge capacity of approximately 2.5–2.7 μAh.

Ocean waves are not only a sustainable renewable energy source but also provide valuable information for monitoring marine environments and natural hazards. In this study, we developed a CNT/SEBS-based self-powered marine monitoring sensor utilizing a mechano-electrochemical mechanism, enabling simultaneous ultralow-frequency wave sensing and electrical energy harvesting. The developed sensor generated an open-circuit voltage of up to 60 mV and a short-circuit current of 80 μA/cm² without an external power source by exploiting variations in electrical double-layer capacitance induced by changes in the electrode–electrolyte interface. The capacitance increased from 0.1 μF to 2.4 μF with increasing immersion area, demonstrating the effectiveness of the proposed sensing mechanism. Furthermore, the CNT/SEBS bilayer exhibited high electrical conductivity together with excellent stretchability and flexibility, maintaining stable electrical responses under repeated water-level fluctuations. The proposed mechano-electrochemical self-powered sensor provides a promising platform for next-generation autonomous marine monitoring systems and sustainable blue-energy harvesting technologies.

Smart windows capable of dynamically controlling light transmission are gaining increasing attention as a means of reducing building energy consumption while improving indoor comfort. However, indium tin oxide (ITO), the most widely used transparent electrode in such devices, suffers from poor mechanical flexibility due to its intrinsic brittleness, limiting its use in curved or flexible window applications. Here, we demonstrate a flexible ITO/DPP hybrid transparent electrode, fabricated by depositing a dimethyl sulfoxide (DMSO)-doped PEDOT:PSS (DPP) layer on ITO, that achieves markedly improved bending durability while maintaining electro-optical performance comparable to bare ITO. The hybrid electrode with an optimized DPP thickness of 120 nm exhibited a sheet resistance of 23.3 Ω/sq., about 20% lower than that of ITO (29 Ω/sq.), while maintaining comparable visible-range transmittance. A polymer-dispersed liquid crystal (PDLC) device fabricated with this electrode showed only a slight decline in driving voltage and transmittance relative to ITO. Notably, its resistance change under repeated bending at a curvature radius of 30 mm was only 25.1%, less than half that of ITO (51.6%). These results suggest that the ITO/DPP hybrid electrode is a promising candidate for transparent electrodes in curved and flexible smart windows and other flexible optoelectronic devices.

Lead-free (Bi_1/2Na_1/2)TiO₃ (BNT)-based incipient piezoelectrics are highly promising for high strain actuators, but the high electric fields (4 ~ 6 kV/mm) required for activation limit practical device integration. In the current literature, large strains are frequently attributed to local structural variations like microscopic core-shell architectures. This work systematically investigates an alternative pathway by introducing A-site Strontium (Sr) excess non-stoichiometry into 0.74(Bi_1/2Na_1/2)TiO₃‒0.26SrTiO₃ (BNST26) ceramics. Microstructural and X-ray diffraction analyses reveal highly dense, uniform matrices completely devoid of micro-scale core-shell boundaries or macroscopic symmetry distortions, revealing that Sr non-stoichiometry diverges from typical Bi-excess mechanisms. Interestingly, despite negligible variations in overall macro-scale strain behavior across the composition series, a peak normalized strain (S_max/E_max) of approximately 804 pm/V is achieved at a low driving field of 2 kV/mm for the 1 mol% Sr-excess specimen (x = 0.010). These results indicate that while Sr non-stoichiometry weakly influences nanoscale stability, it can be inferred that subtle modifications of local defect configurations optimize switching energy barriers, enabling high-strain, low-drive-field performance in lead-free relaxors.