This study investigates the effects of chemical etching for anti-glare (AG) treatment and the subsequent deposition of a TiZrO2/SiO2 double-layer anti-reflection (AR) coating on glass surfaces. The AG treatment was performed using ammonium fluoride in gel form via screen printing, followed by electron beam deposition of SiO2/TiZrO2 layers. The surface roughness, optical transmittance, and refractive index were analyzed. The results revealed that while the surface roughness increased with larger screen patterns during the AG treatment, it was reduced by the deposition of the AR layers. Additionally, the gloss caused by external light was higher with lower surface roughness, but it was effectively reduced by the AR coating. The optical reflectance showed minimal changes during the AG treatment, remaining similar to that of bare glass substrates. However, the AR coating significantly decreased reflectance. The combination of AG treatment and AR coating improved optical transmittance and reduced gloss, making this method beneficial for enhancing visibility in automotive displays. The findings suggest that this approach can mitigate the impact of external light and improve the clarity of displayed information, making it suitable for automotive display applications.
Dielectric resonators with BT (BaTiO₃), TiO₂, and ZrO₂ powders without using the rare earth oxide powders were fabricated for the target relative permittivity of between 30 and 40 and the filter characteristics of metal cavity filter with the dielectric resonators inside were evaluated. Powder characteristics such as particle size distributions and specific surface areas were measured for the composing raw powders to evaluate the powder states. After measuring and comparing the relative permittivity and dielectric losses of the dielectrics of three different compositions, the specific composition was determined (BT:TiO₂:ZrO₂=1:4:1 in mole) and the dielectric resonators were fabricated with that composition, which shows relative permittivity of around 35. The powder characteristics of mixed powders with the determined composition were also evaluated to investigate any agglomerates possibly formed in the process of powder mixing. Dielectric resonators were fabricated by the powder compaction (compaction pressure: 31 MPa) and firing method. The peak firing temperature was 1,300℃ and the holding time at the peak temperature was 3 hours. After firing, cylindrical resonators with one end closed were mechanically machined to eliminate any size differences in dielectric resonator which can be caused by the shrinkage difference during each firing process of resonator fabrication. After measuring the resonator characteristic in the frequency range from 3.6 GHz to 3.8 GHz by changing the height of dielectric resonator, the height of the resonator was determined to be 11.7 mm. Finally, filter characteristics of TM (Transverse Magnetic) mode metal cavity filters with the dielectric inside were measured and evaluated. The metal cavity filters with the dielectric resonators showed the insertion losses of below 1 dB with the band widths of 200 MHz and over 20 dB return losses from 3.6 GHz to 3.8 GHz, whose filter characteristics well satisfied the requirements of the band pass filters for the base stations and it was proved that the dielectrics using the proposed composition could be used as dielectric resonator.
In this paper, for the application of ultrasonic cleaners for cleaning dentures and transparent braces, Pb(Mn1/3Nb2/3)O3-Pb(Ni1/3 Nb2/3)O3-Pb(Zr,Ti)O3 [PMN-PNN-PZT] system ceramics were manufactured and their dielectric and piezoelectric properties were investigated. Overall the best properties suitable for the device applications such as ultrasonic cleaner were obtained from the ceramics sintered at 920℃: bulk density of 7.8 g/㎤, the dielectric constant (εr) of 1,689, piezoelectric charge constant (d33) of 433 pC/N, planar electromechanical coupling factor (kp) of 0.64, mechanical quality factor (Qm) of 835, S11E of 13.37 (10-12 N/㎡), and Curie temperature of 315℃ By using the physical properties of this composition, the ultrasonic cleaner was designed and simulated using the commercial ATILA software. For the three-layered ceramics with the dimension of 25 mm × 25 mm × 2.5mm, an excellent displacement of 8.998 ×10-3 m) and the sound pressure of 147.68 dB were recorded.
The ferroelectricity in Hf0.5Zr0.5O2 (HZO) thin films is one of the most interesting topics for next-generation nonvolatile memory applications. It is known that a crystallization process is required at a temperature of 400℃ or higher to form an orthorhombic phase that results in the ferroelectric properties of the HZO film. However, to realize the integration of ferroelectric HZO films in the back-end-of-line, it is necessary to reduce the annealing temperature below 400℃. This study aims to comprehensively analyze the ferroelectric properties according to the annealing temperature (350-500℃) and time (1-5 h) using a furnace as a crystallization method for HZO films. As a result, the ferroelectric behaviors of the HZO films were achieved at a temperature of 400℃ or higher regardless of the annealing time. At the annealing temperature of 350℃, the ferroelectric properties appeared only when the annealing time was sufficiently increased (4 h or more). Based on these results, it was experimentally confirmed that the optimization of the annealing temperature and time is very important for the ferroelectric phase crystallization of HZO films and the improvement of their ferroelectric properties.
For enhancing the flame-retardant properties of wallpapers, we developed an organic-inorganic hybrid solution with ZrSiO4 as a functional ceramic powder, coated on non-woven fabric using dip coating, spray coating, and slot-die coating methods. Their flame retardant properties were characterized by a 45° combustion tester, which is manufactured according to the flame-retardant performance standard (KOFEIS 1001 and KS F 2819). In organic-inorganic hybrid solution, with increasing the concentration of acid-catalyst (acetic acid), the precipitation of ZrSiO4 powders increased, and the flame retardant properties decreased. The highest flame retardant result was obtained for the solution adding 5 wt% acetic acid. The optimization of the coating method and coating number resulted in the most excellent flame-retardant properties being obtained for the non-woven fabric coated for 5 or 7 times by dip coating method, and their flame-retardant properties corresponded to class 2 flame-retardant performance of wallpapers.
ZrO2/PSS thin film with a high refractive index was fabricated on a glass substrate by a layer-by-layer self-assembly method. The surface morphology and thickness of the fabricated ZrO2/PSS thin films were measured as a function of the number of (ZrO2/PSS)n. As the number of (ZrO2/PSS)n increased from n = 5 to n = 20, RMS roughness decreased from 29.01 nm to 8.368 nm. The ZrO2 thin films exhibited high transmittance of 85% or more; and the 15-bilayer thin film exhibited the highest transmittance among the samples. The transmittance of the fabricated (ZrO2/PSS)15 thin film was ca. 90.8% in the visible range. The refractive index of the glass substrate coated by a (ZrO2/PSS)15 thin film with a thickness of 160 nm increased from ca. 1.52 to 1.74 at the 632 nm wavelength.
In this study, in order to develop composition ceramics for refrigeration device application at a temperature of less than 90°C, a Ba(Ti1-xZrx)O3 composition was fabricated using a conventional solid-state method. Electrocaloric properties of these ceramics were investigated using the characteristics of P-E hysteresis loops in a wide temperature range from room temperature to 150°C. The Curie temperature of Ba(Ti1-xZrx)O3 ceramics decreased with the increase of x. The maximum value of □T = 0.07°C in an ambient temperature of 85°C under 30 kV/cm appeared when x = 0.125. It was concluded that the composition (x = 0.125) ceramics can be used for refrigeration device applications.
In this study, in order to develop composition ceramics for refrigeration device application, Ba(Ti0.9Zr0.1)O3 composition was fabricated using conventional solid-state method. Electrocaloric effect of this ceramic was investigated using the characteristics of P-E hysteresis loops at wide temperature range from room temperature to 150℃. Curie temperature of Ba(Ti0.9Zr0.1)O3 ceramics showed 80℃. The maximum value of ?T = 0.12℃ in ambient temperature of 115℃ under 30 kV/cm was appeared. It is concluded that Ba(Ti0.9Zr0.1)O3 ceramics can be applied as refrigeration device application.
Ferroelectric Pb(Zr0.52Ti0.48)O₃ (PZT) films were deposited on SrTiO₃(100) substrate by using conductive SrRuO₃ films as underlayer and their structural and ferroelectric properties were investigated. PZT films were grown in (00l) orientation on well lattice-matched pseudo-cubic SrRuO₃ films. Thickness dependence of ferroelectric and electrical properties of PZT films was investigated. PZT film with 400 nm thickness showed a remanent polarization (Pr) of 29.0 μC/cm² and coercive field (Ec) of 83 kV/cm, and Pr decreased and Ec increased with thickness reduction. The dielectric constant for PZT films showed gradual decrease with thickness reduction. Breakdown field of PZT films did not show the thickness dependence and displayed as high value as 1 MV/cm.
Thermal batteries use inorganic salt as electrolyte, which is inactive at room temperature. As soon as heat pellets are fired by an igniter, all the solid electrolytes are instantly melted into excellent ionic conductors. However, the abnormal heat generation by the igniter flame or heat pellets causes the thermal decomposition of the electrode and the melting of the anode, eventually leading to a thermal runaway, which results in overheating or explosion. The thermal runaway can be significantly reduced by the adoption of Zr/BaCrO4 heat papers. In this study, the heat papers with various ratios of fuel (Zr) and oxidizer (BaCrO4) were prepared by the paper-making process. We have investigated the calorimetric value, burning rate, and ignition sensitivity. The ignition test of heat pellets and the discharge test of thermal batteries were also carried out. At the composition of 40 wt.% of Zr, the heat papers showed the highest specific calorimetric value and burning rate. As a result, Zr/BaCrO4 heat paper made by the paper-making process has shown the applicability for thermal batteries.
Composite ceramics of alumina-TZP(3Y) have good mechanical and electrical properties. So, They have been used as high strength refractory materials and thick film substrates, etc. In this study, Composite ceramics of alumina-TZP(3Y) were fabricated by uniaxial pressing and sintering at 1,400, 1,500, and 1,600℃, and their microstructures and mechanical properties were investigated. As the TZP(3Y) content in composite ceramics increases from 20 wt.% to 80 wt.%, the fracture toughness increases monotonically, which seems to be related to the higher relative density and/or toughening mechanism by means of stabilized tetragonal zirconia phase at room temperature. In contrast to the fracture toughness, Vickers hardness of the composite ceramics shows maximum value (1,938 Hv) at a 40 wt.% of TZP(3Y). The result of Vickers hardness is likely to be due to more dense sintered microstructure of composite ceramics than pure alumina and reinforcement of composite ceramics with TZP(3Y), considering that Vickers hardness of pure Al2O3 is greater than that of TZP(3Y). It is also shown that the ZrO2 particles are 1°Cated between Al2O3 grains and suppress grain growth each other.
We investigated the physical properties of stoichiometric and non-stoichiometric oxide doped complex perovskite, Ba(Zn1/3Ta2/3)O3 ceramics and their impacts on the microwave dielectric performances using various characterization techniques such as X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and network analyzer. According to the measurement of lattice constant changes, anomalous lattice volume contraction of ZrO2 doped Ba(Zn1/3Ta2/3)O3 sample only showed the dielectric quality factor enhancements, which was due to the lattice volume contraction as well as the 1:2 B-site cation ordering. In addition, NiO doping was useful to the stabilization of temperature coefficient of resonance frequency.
Soution-processed ZrInZnO (ZIZO) thin-film transistors (TFTs) with varying Zr content were fabricated. The ZIZO TFT (Zr=20 at. %/Zn) has an optimal performance with the saturation field effect mobility of 0.77 cm2/Vs, the threshold voltage (Vth) of 2.1 V, the on/off ratio of 4.95×10(6), and subthreshold swing (S.S) of 0.73 V/decade. Using this optimized ZIZO TFT, the positive and negative gate bias stress according to annealing temperature was also investigated. While the Vth shifts dramatically after 1,000 s of both gate bias stresses, variations in the S.S are negligible. It suggests that electrons or holes are temporarily trapped in the gate insulator, the semiconductor, or the interface between both layers.
Recently, low temperature co-fired ceramic (LTCC) technology is widely used in sensors, actuators and microsystems fields because of its very good electrical and mechanical properties, high reliability and stability as well as possibility of making 3D micro structures. In this study, we investigated the effects of sputtering gas ratio and annealing temperature on the crystal structure of Pb(ZrTi)O3 (PZT) thin films deposited on LTCC substrate. The LTCC substrate with thickness of 400 ㎛ were fabricated by laminating 4 green tapes which consist of alumina and glass particle in an organic binder. The PZT thin films were deposited on Pt / Ti / LTCC substrates by RF magnetron sputtering method. The results showed that the crystallization of the films were enhanced as increasing O2 mixing ratio. At about 25% O2 mixing ratio, was well crystallized in the perovskite structure. PZT thin films was annealed at various temperatures. When the annealing temperature is lower, the PZT thin films become a phyrochlore phase. However, when the annealing temperature is higher than 600℃, the PZT thin films become a perovskite phase. At the annealing temperature of 700℃, perovskite PZT thin films with good quality structure was obtained.
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