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"Pad"

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"Pad"

Analysis of Voltage Generating Characteristics of Composite Rail Pad Composed of Piezoelectric PVDF Film and Polyurethane Bonding Materials
Hojin Cho, Yujin Lim, Sung Su Kim, Jong Kwan Lee
J Korean Inst Electr Electron Mater Eng 2017;30(6):381-386.   Published online June 1, 2017
DOI: https://doi.org/10.4313/JKEM.2017.30.6.381
A railway track generates severe levels of vibrations. In order to reduce these vibrations and to provide structural stability, various rail pads, mats, etc., are used for vibration protection. In this study, a specially designed rail pad was developed to reduce vibration and to generate electric power simultaneously, that is, by using the vibrations generated by railway cars on the track. The newly developed rail pads were tested to evaluate the characteristics of electric power by investigating the generated voltage and the current levels and patterns. In addition, we proposed an optimal laminated structure and adhesive by comparing the voltage generated by each type of adhesive required for optimal adhesion of the rail pad and the piezoelectric device.
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Regular Paper : Characteristic of On-resistance Improvement with Gate Pad Structure
Ye Hwan Kang, Won Young Yoo, Woo Taek Kim, Tae Su Park, Eun Sik Jung, Chang Heon Yang
J Korean Inst Electr Electron Mater Eng 2015;28(4):218-221.   Published online April 1, 2015
DOI: https://doi.org/10.4313/JKEM.2015.28.4.218
Power MOSFETs (metal oxide semiconductor field effect transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device during switch-on state, it is essential to increase its conductance. In this study we have investigated a structure to reduce the on-resistance characteristics of the MOSFET. We have a proposed MOSFET structure of active cells region buried under the gate pad. The measurement are carried out with a EDS to analyze electrical characteristics, and the proposed MOSFET are compared with the conventional MOSFET. The result of proposed MOSFET was 1.68[Ω], showing 10% improvement compared to the conventional MOSFET at 700[V].
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Effect of Pad Thickness on Removal Rate and Within Wafer Non-Uniformity in Oxide CMP
Jae Hyun Bae, Hyun Seop Lee, Jae Hong Park, Hideaki Nishizawa, Masaharu Kinoshita, Hae Do Jeong
J Korean Inst Electr Electron Mater Eng 2010;23(5):358-363.   Published online May 1, 2010
DOI: https://doi.org/10.4313/JKEM.2010.23.5.358

Citations

Citations to this article as recorded by  
  • Effects of CMP Retaining Ring Material on the Performance of Wafer Polishing
    Ki-Won Park, Eun-young Kim, Dong-Sam Park
    Journal of the Korean Society of Manufacturing Process Engineers.2020; 19(3): 22.     CrossRef
  • Effects of Insert Materials of Retaining Ring on Polishing Finish in Oxide CMP
    Ki-Won Park, Dong-Sam Park
    Journal of the Korean Society of Manufacturing Process Engineers.2019; 18(8): 44.     CrossRef
  • Finite Element Analysis on Dynamic Viscoelasticity of CMP Polishing Pad
    Byeongjun Pak, Dasol Lee, Seonho Jeong, Hyunjin Kim, Haedo Jeong
    Journal of the Korean Society for Precision Engineering.2019; 36(2): 177.     CrossRef
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A Study on Pad Profile Variation using Kinematical Analysis on Swing Arm Conditioner
Ji Heon Oh, Sang Jik Lee, Ho Jun Lee, Han Chul Cho, Hyun Seop Lee, Hyoung Jae Kim, Hae Do Jeong
J Korean Inst Electr Electron Mater Eng 2008;21(11):963-967.   Published online November 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.11.963
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Development of Microstructure Pad and Its Performances in STI CMP
Suk Hoon Jeong, Jae Woo Jung, Ki Hyun Park, Heon Deok Seo, Jae Hong Park, Boum Young Park, Suk Bae Joo, Jae Young Choi, Hae Do Jeong
J Korean Inst Electr Electron Mater Eng 2008;21(3):203-207.   Published online March 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.3.203
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Effect of Pad Buffing process on Material Removal Characteristics in Silicon Chemical Mechanical Polishing
J Korean Inst Electr Electron Mater Eng 2007;20(4):303-307.   Published online April 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.4.303
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Effect of Pad Surface Characteristics on Within Wafer Non-uniformity in CMP
J Korean Inst Electr Electron Mater Eng 2006;19(4):309-313.   Published online April 1, 2006
DOI: https://doi.org/10.4313/JKEM.2006.19.4.309
  • 62 View
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Fixed Abrasive Pad with Self-conditioning in CMP Process
J Korean Inst Electr Electron Mater Eng 2005;18(4):321-326.   Published online April 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.4.321
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CMP Properties of Oxide Film with Various Pad Conditioning Temperatures
J Korean Inst Electr Electron Mater Eng 2005;18(4):297-302.   Published online April 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.4.297
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Application of Herd Porous Pad in Metal CMP Process
Sang Yong Kim, Nam Hoon Kim, In Pyo Kim, Eui Goo Chang
J Korean Inst Electr Electron Mater Eng 2003;16(5):385-389.   Published online May 1, 2003
DOI: https://doi.org/10.4313/JKEM.2003.16.5.385
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