The development of a large-area solution process for CuO nanowires, which are promising p-type thin film transistors (TFT) channel materials, is required. To overcome the limitations of the existing high-vacuum and high-cost deposition process, a large-area Cu nanowire network was formed on the substrate using the Mayer rod coating method, and a CuO channel was implemented by subsequent thermal annealing. Consequently, p-type TFT with an on/off current ratio of 1.4×104 and a field-effect mobility µFE≈10-4 cm2/(V⋅s). was fabricated and optimized. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses showed that the sample annealed at 200°C exhibited an incomplete oxidation state with a mixed Cu/Cu2O phase and a high fraction of M-OH species (58.78%), resulting in a low on/off current ratio (≈1.2). In contrast, annealing at 450°C leads to a CuOdominant phase, where the fraction of lattice oxygen(O1) increases to 31.11% and the oxygen vacancy (VO) component increases to 7.15%, indicating a significant improvement in hole concentration and charge transport. These phase transitions and surface chemical changes are identified as the key mechanisms for the enhanced TFT switching characteristics. The low-cost, large-area Mayer rodbased solution process proposed in this study provides a basic process platform for p-type TFTs applicable to flexible wearables and display technologies and suggests the possibility of commercialization through additional optimization of bias stability in the future.
GaN nanowire (NW)-based hybrid structures have attracted attention for optoelectronic applications due to their high surface area and efficient carrier transport. However, the optical transparency of GaN NWs is often limited by unintended residual species accumulated on the surface and in the inter-wire regions, as well as defect-related absorption, leading to reduced light transmission. In this work, we demonstrate that thermal annealing significantly improves the optical transparency of GaN NWs grown on indium tin oxide (ITO)/glass substrates. The transmittance increased from 47.9% to 78.5% at 550 nm after rapid thermal annealing at 800oC for 3 min, while a comparable value (~75.5%) was achieved at 600oC for 5 min. PbBr3 was deposited onto the GaN NWs to form hybrid structures, and temperature-dependent photoluminescence (TDPL) measurements revealed enhanced emission stability with suppressed peak shift and reduced spectral broadening. Arrhenius analysis based on a two-channel model revealed that the activation energy of the dominant non-radiative recombination pathway increased from 62 meV in the as-grown sample to 85 meV after thermal annealing, while its relative contribution remained nearly unchanged. In contrast, the shallow trap-assisted pathway exhibited a similar activation energy of approximately 6 meV in both samples, but its contribution decreased from 0.35 to 0.17 after annealing. As a result, the internal quantum efficiency (IQE) improved from 75.9% to 87.4%. These results show that thermal annealing improves optical transparency by removing residuals and suppresses defect-related recombination, leading to enhanced carrier dynamics and improved optical performance of PbBr3-based hybrid structures.
The search for sustainable and efficient energy conversion technologies is becoming increasingly critical in response to global energy and environmental challenges. Traditional lead-based piezoelectric materials, such as lead zirconate titanate (PZT), have high piezoelectric constant but present significant health problems and environmental risks due to their hazardous metal contaminants. This study addresses these concerns by investigating barium titanate (BTO), a lead-free alternative, and enhancing its performance using anisotropic nanowires (NWs) structures. BTO NWs were synthesized via a two-step hydrothermal method and incorporated into a poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] matrix to fabricate a piezoelectric composite film. The resulting device demonstrated a notable increase in electrical output compared to devices based on isotropic morphology of BTO nanoparticles, exhibiting enhanced performance. These findings suggest that BTO NWs hold significant promise for applications in flexible and wearable electronics, paving the way for further advancements in sustainable energy technology.
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Precise control over the morphology of nanostructures is critical for tailoring their physical and chemical properties. This study addresses the challenge of developing a simple, integrated method for synthesizing both 1D and 2D colloidal Cu nanostructures in a single system, achieving successful tuning of their localized surface plasmon resonance (LSPR) properties. A facile hydrothermal synthesis utilizing potassium iodide (KI) and hexadecylamine (HDA) is presented for controlling Cu nanostructure morphologies. The key to achieving 1D nanowires (NWs) and 2D nanoplates (NPs) depends on the controlled adsorption of HDA molecules and iodide (I-) ions on specific crystal facets. Depending on the morphologies, the resultant Cu nanostructures exhibit tunable LSPR peaks from 558 nm [nanoplates (NPs)] to 590 nm [nanowires (NWs)]. These results pave the way for the scalable and cost-effective production of plasmonic Cu nanostructures with tunable optical properties, holding promise for applications in sensing, catalysis, and photonic devices.
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Complexation-controlled Cu@Ag core-shell flakes for thermally stable printed electrodes in flexible energy-storage capacitors Seokhwan Kim, Geumseong Lee, Ye Chan Lee, Je-Hui Koo, Seonhwa Park, Geon-Tae Hwang, Mahesh Peddigari, Jungho Ryu, Dahye Shin, Kyoung Jin Jung, Kwi-Il Park, Yuho Min Chemical Engineering Journal.2026; 540: 177341. CrossRef
In this study, composite transparent electrodes were fabricated either from a conductive polymer poly(3,4- ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) or silver nanowire (AgNW). Three transparent electrodes such as PEDOT:PSS, PEDOT:PSS and AgNW mixture, and AgNW were fabricated. As for a transparent electrode, measured sheet resistance values were 89.6, 60.6 and 28.6 Ω/sq, and the transmittance values were 80.2, 82.0 and 83.8% while surface roughness (Rq) values were 4.1, 8.1, 20.4 nm for PEDOT:PSS, PEDOT:PSS and AgNW mixture, and AgNW, respectively. To verify the overall performance of these composite electrodes, we applied these electrodes to the top electrode of the solution-processed organic solar cells (OSCs). PEDOT:PSS provided the best performance with a fill factor (FF) of 51.2% and a photoconversion efficiency (PCE) of 2.2%, while traditional metal top electrode OSC provided FF of 60.5% and PCE of 3.1%.
Epitaxial ZnO nanowires (NWs) were synthesized on sapphire (001) substrates using a hydrothermal process. The effects of the pH value of the precursor solution on the structural and optical properties of the resulting NWs was studied. The epitaxial relationship and the domain matching configuration between the sapphire (001) substrate and the as-grown ZnO NWs were determined using synchrotron X-ray diffraction measurements. The (002) plane of wurtzite ZnO NW grows in the surface normal direction parallel to the sapphire (001) direction. However, three types of in-plane domain matching configurations were observed, such as the on-position, 30°-rotated position, and ±8.5°-rotated position relative to the on-position, which might be attributed to inheriting the in-plane domain configuration of the ZnO seed layer.
Transparent conductive thin films (TCFs) are essential materials for solar cells, organic light-emitting diodes, and display panels. Indium tin oxide (ITO) is one of the most widely used commercial materials to create TCFs’; however, new materials that can possibly replace ITO at a lower cost and/or those possessing mechanical flexibility are urgently needed. Silver nanowire (AgNW) is one of those promising materials, as it is less expensive and possesses superior mechanical flexibility as compared to ITO. We used AgNW and sol-gel ZnO to fabricate composite thin films by spray coating. We propose two spray-coating methods: the ‘metal－organic chemical vapor deposition (MOCVD)/AgNW’ method and the Mixture method. These two methods are expected to be commercialized for high-quality and low-cost products, respectively.
The proposed stretchable transparent electrodes based on silver nanowires (AgNWs) were prepared on a polyurethane (PU) substrate. In order toavoid the surface roughness caused by the silver nanowires, a titanium oxide (TiO2) buffer layer was addedby coating and heating the organometallic sol-gel solution. The fabricated stretchable electrodes showedan electrical sheet resistance of 24 Ωsq-1, 78% transmittance at 550 nm, and an average surface roughness below 5 nm. Furthermore, the AgNW-based electrode maintained its initial electrical resistance under 130% strain testing conditions, without the assistance of additional conductive polymer layers. In this paper, the critical role of the TiO2 buffer layer between the AgNW network and the PU substrate has been discussed.
A hybrid transparent electrode was fabricated with graphene and silver nanowires (Ag NWs). Three different processes were used to fabricate the hybrid electrode. Measurements of the sheet resistances, transmittances, and surface roughnesses of the hybrid electrodes were used to identify the optimal fabrication process. The surface roughness of the hybrid electrodes with Ag NWs embedded in a transparent polymer matrix was significantly lower than that of the other hybrid electrodes. A hybrid electrode fabricated by transferring graphene onto Ag NWs after spin-coating the Ag NWs onto the substrate showed the lowest sheet resistance. The transmittance of the hybrid electrodes was comparable to that of Ag NW electrodes.
Transparent film heaters employing silver nanowires (Ag NWs) have attracted increasing attention because of their widespread applications. However, the low thermal resistance of Ag NWs limits the maximum operating temperature of the Ag NW film heater. In this study, Ag NW film heaters with high mechanical and thermal stability were successfully developed. The thermal power-out characteristics of the Ag NW heaters were investigated as a function of the Ag NW density. The results revealed that the prepared flexible Ag NW heater possessed high thermal stability over 190℃ owing to ZnO encapsulation. This indicates that the Ag NW film with excellent thermal stability have remarkably high potential for use as electrodes in film heaters operating at high temperatures.
Recently, there has been much focus on the controlled alignment and patterning process of nanowires for nanoelectronic devices. A simple and effective method for patterning of highly aligned nanowires using a microcontact printing technique is demonstrated. In this method, nanowires are first directionally aligned by contact printing, following which line and space micropatterns of nanowire arrays are accomplished by microcontact printing with a micro patterned NOA mold.
We developed a Ag nanowire patterning technique using a water-soluble sacrificial layer. To form a water-soluble sacrificial layer, germanium was deposited on the substrate and then water-soluble germanium oxide was simply formed by thermal oxidation of germanium using a conventional furnace. The formation of Ag nanowire patterns with various line and space arrangements was successfully demonstrated using this patterning process. The main advantage of this patterning technique is that it does not use a strong acid etchant, thereby preventing damage to the Ag nanowire during the patterning process.
Transparent Ag nanowire conducting thin films with high surface hardness were fabricated by bar coating method. When coating speed was changed from 35 mm/sec to 50 mm/sec, the transmittance of coated glass increased from 65.3% to 80.8% in visible light range and the surface resistance was changed from 10.1 Ω/sq to 23.3 Ω/sq. The surface hardness and adhesion of thin film were 5H and 5B.
Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction of p-type NiO and n-type ZnO. A functional template of ITO nanowires (NWs) was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.
ZnO nanowires were grown by hydrothermal synthesis process and piezoelectric poly vinylidenefluoride (PVDF) was then coated on top of the ZnO-nanowires by spray-coating technique. Thecomposite layer of ZnO-nanowires/PVDF was applied to an energy harvesting device based onpiezoelectric-conversion mechanism. A defined mechanical force was given to the nanogenerator device toevaluate their electric power generation characteristics, where output current density and voltage wereexamined. Electric power generation property of the ZnO-nanowires/PVDF based nanogenerator devicewas compared to that of the nanogenerator device with ZnO-nanowires as single active layer. Effect ofthe ZnO-nanowires on improvement of power generation was discussed to examine its feasibility for thenanogenerator device.
Hydrothermal synthesis technique could be carried out for growth of ZnO nanowires atrelatively low process temperature, and it could be freely utilized with various substrates for fabricationprocess of functional electronic devices. However, it has also a demerit of relatively slow growthcharacteristics of the resulting ZnO nanowires. In this paper, an external DC bias of positive and negative0.5 [V] was applied in the hydrothermal synthesis process for 2∼8 [h] to prepare ZnO nanowires on aseed layer of AZO with high electrical conductivity. Growth characteristics of the synthesized ZnOnanowires were analyzed by FE-SEM. Material property of the grown ZnO nanowires was examined byPL analysis. The ZnO nanowires grown with positive bias revealed distinctively enhanced growthcharacteristics, and they showed a typical material property of ZnO.
ZnO nanowires on the a-, c- and m-plane oriented 4H-SiC substrates were grown by using a high temperature tube furnace, Ti/Au electrodes were deposited on ZnO nanowires and a-, c- and m-plane 4H-SiC substrates, respectively. The shape and density of the ZnO nanowires were inestigated by field emission scanning electron microscope. It was found that the growth direction of nanowires depends strongly on growth parameters such as growth temperature and pressure. In this work, The sensitivity of nanowires formed a-, c- and m-plane oriented 4H-SiC gas sensor was measured at 300℃ with CO gas concentration of 80%. The nanowires grown on a-plane oriented 4H-SiC show improved performance than those on c- and m-plane oriented 4H-SiC due to the increased density of nanowire on a plane 4H-SiC.
Fe3O4(magnetite) having half metallic property attracts great attention material with high curie temperature in spintronics. Fe3O4 thin films and nanowires were grown onto c-Al2O3(0001) at various substrate temperatures. Fe3O4 films deposited from 300 to 600℃ are influenced by thermal stress induced from mismatch of thermal expansion coefficient between Fe3O4 and Al2O3 (0001) substrate. The Fe3O4 nanowires grown at 640℃ showed a diameter of 130 nm and a length of 2-10 μm. The nanowire arrays fabricated by pulsed laser deposition technique have high coercivity(Hc) of 608 Oe and Squareness(Mr/Ms) of 0.68 in perpendicular direction.
Single crystalline Au nanowires were successfully synthesized in a tube-type furnace. The Au nanowires were grown by vapor phase synthesis technique using solid-liquid-solid (SLS) mechanism on substrates of corning glass and Si wafer. Prior to Au nanowire synthesis, Au thin film served as both catalyst and source for Au nanowire was prepared by sputtering process. Average length of the grown Au nanowires was approximately 1 μm on both the corning glass and Si wafer substrates, while the diameter and the density of which were dependent on the thickness of the Au thin film. To induce a super-saturated states for the Au particle catalyst and Au molecules during the Au nanowire synthesis, thickness of the Au catalyst thin film was fixed to 10 nm or 20 nm. Additionally, synthesis of the Au nanowires was carried out without introducing carrier gas in the tube furnace, and synthesis temperature was varied to investigate the temperature effect on the resulting Au nanowire characteristics.
The effect of oxygen pressure in the synthesis of ZnO nanostructures through thermal evaporation of Zn powder was investigated. The thermal evaporation process was carried out in oxygen ambient for 1 hr at 1,000℃ under different pressures. The oxygen pressure was changed in range of 0.5 ? 900 Torr. Any nanostructure was not formed on the specimens prepared at oxygen pressures lower than 10 Torr. When oxygen pressure was 100 Torr, ZnO nanowires were observed. With increasing the oxygen pressure to 500 Torr, the morphology of ZnO nanostructures changed from wire to tetrapod. For all the samples, room temperature photoluminescence spectra show a strong green emission peak at around 550 nm.
ZnO nanowires were synthesized by hydrothermal technique. Prepared synthesis aqueous solutions were preserved by preheating in autoclave type synthesis equipment with various preheating time of 1 h difference. ITO-coated corning glass substrates deposited with AZO seed layers were then inserted in the preheated synthesis aqueous solutions and ZnO nanowires were grown for 180 min at 90℃. Density, length and aspect ratio of the grown ZnO nanowires were investigated. Composition, structural and optical properties of the grown ZnO nanowires were analyzed, Characteristics of the ZnO nanowires were comparatively studied in relation with Zn2+ ion concentration measured directly after the preheating of synthesis aqueous solution.
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Preparation, characterization and properties of ZnO nanomaterials Jiaolian Luo, Xiaoming Zhang, Ruxue Chen, Xiaohui Wang, Ji Zhu, Xiaomin Wang IOP Conference Series: Materials Science and Engineering.2017; 207: 012010. CrossRef
ZnO thin films were deposited on a-, c- and m- plane oriented 4H-SiC substrates by pulsed laser deposition. ZnO nanowires were formed on substrates by tube furnace. Shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. Average surface roughness and root mean square surface roughness were measure by atomic force microscope. Optical properties were investigated by Photoluminescence measurement. Density of ZnO nanowires grown on a-, c- and m-plane oriented 4H-SiC substrates were 17.89 μm-2, 9.98 μm-2 and 2.61 μm-2, respectively.
ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at 300℃ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.
Nano-fibers of the Li[Ni1/3Co1/3Mn1/3]O2 electrode were synthesized from a metal oxide precursor using the electrospun method. The XRD patterns of all prepared powders showed a hexagonal α- NaFeO2 structure (space group: R-3 m, 166). Scanning electron microscopy showed that all the synthesized samples were comprised of nanofibers with a size of 100~800 nm. Among the samples tested, the calcined Li[Ni1/3Co1/3Mn1/3]O2 nanowires in oxygen heating atmosphere showed a high charge and discharge capacity of 239.22 and 172.81 mAhg-1 at the 1st cycle, respectively. In addition, the charge transfer resistance was also improved significantly compared to the other samples.
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Effects of iron doping at 55 °C on LiNi0.85Co0.10Al0.05O2 Cheong Kim, Tae-Jun Park, Song-Gi Min, Su-Bin Yang, Jong-Tae Son Journal of the Korean Physical Society.2014; 65(2): 243. CrossRef
We have investigated the sensing properties of ethanol gas sensor with pure ZnO and Ga-doped ZnO nanowires on Au coated (0001) sapphire substrates grown by hot walled pulsed laser deposition. Randomly aligned ZnO nanowires arrays were grown on a Au-electrode patterned under ambient conditions. ZnO nanowires have various sizes and shapes with a different substrate position inside a furnace. The average of length and diameter of the ZnO nanowires were 8 ㎛ and 100 ㎚ respectively, and confirmed by field emission scanning electron microscopy. Sensitivity chanege characterization of the gas sensor was found that measured sensitivities of the ethanol gas sensors were 83.3% and 68.3% at 300℃ respectively.
In this paper, nonvolatile nano-floating gate memory devices are fabricated with ZnO nanowires and Al nanoparticles on a SiO2/Si substrate. Al nanoparticles used as floating gate nodes are formed by the sputtering method. The fabricated device exhibits a threshold voltage shift of -1.5 V. In addition, we investigate the endurance and retention characteristics of the nano-floating gate memory device.
Growth of oriented GaN nanowires by controlling nucleation conditions Yang Zong, Hui Huang, Wenbin Song, Rui Lv, Danna Zhao, Zhe Liu, Qiyilan Guang, Jingwei Guo, Zhenan Tang Crystal Research and Technology.2016; 51(12): 757. CrossRef
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