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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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ITO 나노와이어 기반의 투명 산화물 반도체 광전소자

김현기, 김홍식, 김홍식, 김준동

ITO Nanowires-embedded Transparent Metal-oxide Semiconductor Photoelectric Devices

Hyunki Kim, Hong Sik Kim, Malkeshkumar Patel, Joondong Kima
J Electr Electron Mater 2015;28(12):808-812.
Published online: December 1, 2015
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Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction of p-type NiO and n-type ZnO. A functional template of ITO nanowires (NWs) was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

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ITO Nanowires-embedded Transparent Metal-oxide Semiconductor Photoelectric Devices
J Electr Electron Mater. 2015;28(12):808-812.   Published online December 1, 2015
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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ITO Nanowires-embedded Transparent Metal-oxide Semiconductor Photoelectric Devices
J Electr Electron Mater. 2015;28(12):808-812.   Published online December 1, 2015
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