Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

희생층을 이용한 은 나노와이어 패터닝 공정 개발

하본희, 조성진

Development of Ag Nanowire Patterning Process Using Sacrificial Layer

Bon Hee Ha, Sung Jin Jo
J Electr Electron Mater 2016;29(7):435-439.
Published online: July 1, 2016
  • 6 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
prev next

We developed a Ag nanowire patterning technique using a water-soluble sacrificial layer. To form a water-soluble sacrificial layer, germanium was deposited on the substrate and then water-soluble germanium oxide was simply formed by thermal oxidation of germanium using a conventional furnace. The formation of Ag nanowire patterns with various line and space arrangements was successfully demonstrated using this patterning process. The main advantage of this patterning technique is that it does not use a strong acid etchant, thereby preventing damage to the Ag nanowire during the patterning process.

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

Development of Ag Nanowire Patterning Process Using Sacrificial Layer
J Electr Electron Mater. 2016;29(7):435-439.   Published online July 1, 2016
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Development of Ag Nanowire Patterning Process Using Sacrificial Layer
J Electr Electron Mater. 2016;29(7):435-439.   Published online July 1, 2016
Close