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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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반도체 : 4H-SiC 기판의 a-, c-, m-면방향에 따른 ZnO 나노선의 Photoluminescence 특성 분석

김익주, 여인형, 문병무, 강민석, 구상모

Regular Paper : Semiconductor ; Photoluminescence Characteristics of ZnO Nanowires Grown on a-, c- and m-plane Oriented 4H-SiC Substrates

Ik Ju Kim, In Hyung Yer, Byung Moo Moon, Min Seok Kang, Sang Mo Koo
J Electr Electron Mater 2012;25(5):349-352.
Published online: May 1, 2012
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ZnO thin films were deposited on a-, c- and m- plane oriented 4H-SiC substrates by pulsed laser deposition. ZnO nanowires were formed on substrates by tube furnace. Shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. Average surface roughness and root mean square surface roughness were measure by atomic force microscope. Optical properties were investigated by Photoluminescence measurement. Density of ZnO nanowires grown on a-, c- and m-plane oriented 4H-SiC substrates were 17.89 μm-2, 9.98 μm-2 and 2.61 μm-2, respectively.

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Regular Paper : Semiconductor ; Photoluminescence Characteristics of ZnO Nanowires Grown on a-, c- and m-plane Oriented 4H-SiC Substrates
J Electr Electron Mater. 2012;25(5):349-352.   Published online May 1, 2012
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Regular Paper : Semiconductor ; Photoluminescence Characteristics of ZnO Nanowires Grown on a-, c- and m-plane Oriented 4H-SiC Substrates
J Electr Electron Mater. 2012;25(5):349-352.   Published online May 1, 2012
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