We have studied the thermal stability of NCM622 cathode material for Li-ion batteries using real-time synchrotron x-ray scattering below 600°C in both air and vacuum. The expansion of the mean particle size, which reached maximum values of 10.3 μm in air and 10.6 μm in vacuum at 200°C, was attributed to the dehydration of intergranular water within the NCM622 powders. Across all annealing temperatures, the amount of crystal NCM622 phase in air was consistently higher than that in vacuum. The crystal domain sizes in air showed less variation than that in vacuum during annealing from RT to 500°C. These indicate that the crystal NCM622 phase is more thermally stable during annealing in air than in vacuum. This stability is attributed to the presence of 21% oxygen in air, which is absent under vacuum conditions.

Dye-sensitized solar cells (DSSCs) suffer from efficiency limitations due to interfacial charge recombination at the TiO₂/dye/electrolyte interface. In this study, aminopropyltrimethoxysilane (APS) was introduced onto nanoporous TiO₂ photoelectrodes via a dip-coating process with controlled coating times to investigate the effect of silanization time on interfacial charge transport behavior. Unlike concentration-driven structural modification, this work focuses on the evolution of the APS-modified interface governed by reaction time. The DSSC with 30 min APS treatment exhibited the highest power conversion efficiency of 5.34%, representing a 19% enhancement compared to the untreated device (4.49%), mainly due to increased short-circuit current density and open-circuit voltage. However, prolonged coating times (2 h and 24 h) resulted in a significant decrease in photocurrent density, leading to reduced device performance despite partial improvement in recombination resistance. These results are attributed to the time-dependent evolution of the APS interfacial layer. At moderate coating time, APS provides effective surface functionalization, enhancing dye adsorption and suppressing interfacial recombination. In contrast, prolonged coating is expected to induce increased surface coverage and silane condensation, which can hinder electron injection and increase charge transport resistance. Therefore, the photovoltaic performance is governed by a trade-off between recombination suppression and charge injection efficiency, controlled by the silanization time. This study highlights the critical role of interfacial reaction kinetics in determining charge transport behavior and provides an effective strategy for optimizing DSSC performance through time-dependent interface engineering.

This study proposes an optimization strategy for the over-current protection (OCP) parameters of a lithium iron phosphate (LiFePO₄, LFP) battery system used in electric golf carts operating under high motor-load conditions. Real-world hillclimbing tests were conducted under four clearly defined payload/passenger conditions to analyze the transient discharge-current pro-file, voltage sag, and cell-temperature response. The maximum discharge current reached -238.2 A under the 200 kg cargopayload and one-passenger condition, and the current interval exceeding 150 A lasted up to 27 s. The maximum instantaneous power was 11.05 kW. Thermal analysis showed that the cell-temperature rise was within 2°C and the maximum measured cell temperature was 22.3°C. Linear regression of voltage and current yielded R² = 0.9368 and dV/dI = 0.0126 Ω, which was used as the DC internalresistance estimate. Based on these quantitative results and the cell specification limit of 300 A continuous discharge, the OCP threshold was reviewed from 250 A to 280 A to improve driving continuity while remaining below the allowable continuous-discharge current. EIS-based SOH estimation and the AI-BMS variable protection logic are presented as an extension framework for reflecting temperature and aging effects in future OCP-setting decisions.

Organic solar cells based on bulk heterojunction (BHJ) structures have attracted considerable attention because of their low fabrication cost, mechanical flexibility, and compatibility with solution-processing techniques. In BHJ organic photovoltaic devices, nanoscale morphology and crystallinity of the photoactive layer critically influence photovoltaic performance. In this study, the effects of solvent selection and thermal annealing on crystallization evolution and photovoltaic characteristics of P3HT:PCBM organic solar cells were systematically investigated. Three different solvents, including toluene, chlorobenzene (CB), and dichlorobenzene (DCB), were employed for active-layer fabrication, followed by post-thermal annealing treatment. UV–visible absorption spectroscopy revealed solvent-dependent differences in molecular ordering and intermolecular π–π interactions within the active layer. X-ray diffraction analysis confirmed that thermal annealing significantly enhanced crystallinity and lamellar ordering of P3HT domains, particularly for CB-processed films. Electrical characterization demonstrated that solvent evaporation behavior strongly affects photovoltaic performance. Among the investigated devices, the thermally annealed CB-processed device exhibited the highest power conversion efficiency of 1.83% with an enhanced short-circuit current density of 7.057 mA cm⁻². The improved device performance is attributed to optimized crystallization behavior and balanced nanoscale phase separation induced by the moderate evaporation characteristics of CB. In contrast, although DCB-assisted films exhibited relatively strong optical absorption and enhanced crystallinity, excessively slow solvent evaporation likely induced excessive aggregation and coarse phase separation, limiting efficient photovoltaic characteristics. These results demonstrate that solvent engineering combined with thermal annealing is an effective strategy for controlling morphology evolution and crystallization behavior in P3HT:PCBM bulk heterojunction solar cells.

GaN nanowire (NW)-based hybrid structures have attracted attention for optoelectronic applications due to their high surface area and efficient carrier transport. However, the optical transparency of GaN NWs is often limited by unintended residual species accumulated on the surface and in the inter-wire regions, as well as defect-related absorption, leading to reduced light transmission. In this work, we demonstrate that thermal annealing significantly improves the optical transparency of GaN NWs grown on indium tin oxide (ITO)/glass substrates. The transmittance increased from 47.9% to 78.5% at 550 nm after rapid thermal annealing at 800^oC for 3 min, while a comparable value (~75.5%) was achieved at 600^oC for 5 min. PbBr₃ was deposited onto the GaN NWs to form hybrid structures, and temperature-dependent photoluminescence (TDPL) measurements revealed enhanced emission stability with suppressed peak shift and reduced spectral broadening. Arrhenius analysis based on a two-channel model revealed that the activation energy of the dominant non-radiative recombination pathway increased from 62 meV in the as-grown sample to 85 meV after thermal annealing, while its relative contribution remained nearly unchanged. In contrast, the shallow trap-assisted pathway exhibited a similar activation energy of approximately 6 meV in both samples, but its contribution decreased from 0.35 to 0.17 after annealing. As a result, the internal quantum efficiency (IQE) improved from 75.9% to 87.4%. These results show that thermal annealing improves optical transparency by removing residuals and suppresses defect-related recombination, leading to enhanced carrier dynamics and improved optical performance of PbBr₃-based hybrid structures.

Neuromorphic computing, which mimics the energy-efficient parallel processing capabilities of the human brain, has emerged as an alternative to traditional von Neumann architectures that struggle with high power consumption in the era of artificial intelligence (AI). Despite the potential of Si-based neuromorphic chips, they often face fundamental limitations in integration density and biological compatibility, necessitating the development of next-generation devices that can better emulate the ionic signaling of biological systems. This review provides a comprehensive analysis of the recent research trends in artificial synapses and neurons based on organic electrochemical transistors (OECTs), highlighting their unique ability to achieve high transconductance and mixed ionic-electronic conduction at ultra-low operating voltages. We discuss how OECTs successfully replicate diverse synaptic plasticities and complex neuronal spiking behaviors through advanced material engineering and structural optimizations such as vertical architectures. Furthermore, this review discusses the implementation of high-order neural functions, including associative learning and logic operations, which are facilitated by the inherent electrochemical dynamics of organic semiconductors. Finally, overcoming current challenges in reliability and scalability will establish OECTs as a pivotal platform for low-power neuromorphic hardware and bio-integrated electronics.

This review systematically examines the structural characteristics, compositional design strategies, and recent research trends of layered double hydroxides (LDHs), which are recognized as promising electrocatalyst materials in electrochemical nitrate-to-ammonia conversion. Despite the rapid growth in related research, achieving simultaneous high selectivity and efficiency remains a significant technical challenge due to the complex mechanisms of the nitrate reduction reaction (NitRR) and its inherent competition with the hydrogen evolution reaction (HER). In this study, we analyzed the structural contributions of LDH catalysts for maximizing nitrate reduction efficiency and systematically established key catalyst design indicators required to ensure optimal performance. Specifically, we provide a detailed investigation of the physicochemical mechanisms for enhancing NH₃ production by precisely regulating the adsorption energies of reaction intermediates and maximizing charge transfer efficiency through compositional control and defect engineering. Furthermore, we discuss advanced structural design strategies, such as core-shell tandem structures, MOF-derived architectures, and interlayer anion control, as effective methods for enhancing catalytic performance and optimizing mass transport processes. These insights offer a strategic roadmap for designing high-performance LDH catalysts and represent a critical step toward the practical implementation of sustainable green ammonia production systems, particularly for integration into high-efficiency membrane electrode assembly (MEA) technologies.

As electric vehicles (EVs) are rapidly adopted worldwide, large numbers are now transported by sea on dedicated car carriers. With this trend, concerns are increasing about fires and explosions caused by battery thermal runaway during marine transport, while existing SOC limits before loading remain largely empirical. This study experimentally investigates gas generation and explosion characteristics of EV lithium-ion cells under thermal runaway conditions representative of enclosed vehicle decks. We identify and quantify the main off-gas components and clarify the flammability behavior and explosion limits of key combustible species. The results provide basic data for assessing EV battery accidents at sea and support the development of safer ventilation and gas-management strategies for ships.

The rapid proliferation of artificial intelligence (AI) servers and high-performance computing systems has significantly elevated the technical and reliability requirements for multilayer ceramic capacitors (MLCCs). In such systems, MLCCs are critical passive components that must deliver high capacitance, fast transient response, and robust insulation performance under high temperature, voltage, and current density. This review examines the material, structural, and process innovations that underpin MLCC performance in AI applications. Key topics include the development of ultrathin dielectric layers (<0.5 μm), rare-earth doped BaTiO₃-based dielectrics with enhanced DC bias stability, and core-shell microstructures designed for temperature and field resilience. The paper also explores insulation degradation mechanisms―such as vacancydriven conduction and demixing―and advanced reliability assessment methodologies, including HALT, TSDC, and the tipping point framework. Comparisons with automotive-grade MLCCs highlight the unique requirements of AI systems, such as ultraminiaturization, high volumetric efficiency, and ppm-level field failure rates. Finally, the review discusses emerging trends in MLCC technology, including particle engineering, interface stabilization, and advanced lamination techniques, and provides insight into the future direction of capacitor development tailored to AI data center environments.

Humidity monitoring of exhaled breath has emerged as a vital approach for noninvasive respiratory health assessment, underscoring the need for sensitive and reliable humidity sensors. Despite its high conductivity and hydrophilic functional groups, reduced graphene oxide (rGO) often undergoes irreversible moisture adsorption and gradual oxidation by residual water, resulting in sensitivity degradation and long-term instability during cycling. In this study, a montmorillonite/reduced graphene oxide (MMT/rGO) composite is developed as a room-temperature humidity-sensing material, exhibiting an optimized response of 115%, more than 14 times higher than that of pristine rGO. This superior performance originates from the synergistic interaction between the reversible MMT swelling and the conductive rGO network near the electrical percolation transition, which ensures excellent stability and repeatability under repeated humidity cycles. These findings suggest that the MMT/rGO composite provides a cost-effective and biocompatible platform for next-generation wearable humidity sensors capable of continuous respiratory monitoring.

To ensure high-voltage stability and thermal resistance of insulation paper used in transformers, this study evaluated the structural and electrical properties of four types of insulation paper samples fabricated using unbleached kraft pulp (UKP). The samples were prepared under controlled conditions with different freeness levels (300-700 ml). Tensile strength, dielectric constant, breakdown strength (dry and oil), volume resistivity, water absorption, and oil absorption were quantitatively measured. The sample with a beating degree of 300 exhibited the highest breakdown strength (53.85 kV/mm) and volume resistivity (1.49×10¹⁶ Ω·cm), whereas the samples with higher beating intensity showed improved fiber bonding and densification. These findings demonstrate the practical applicability of UKP-based insulation paper as a high-performance, eco-friendly insulating material for transformer systems, providing a scientific foundation for process optimization in insulation paper design.

AlGaN/GaN High Electron Mobility Transistors (HEMTs) are emerging as next-generation semiconductors optimized for high-power and high-frequency applications, with their performance highly dependent on the surface and interface quality of the AlGaN/GaN structure. In particular, the 2-Dimensional Electron Gas (2DEG) formed in the AlGaN layer is susceptible to trapping by surface defects, which degrades electrical characteristics and makes the device vulnerable to degradation. In this study, we propose an approach to enhance device reliability and performance by forming a gallium oxynitride (GaON) interfacial layer through O₂ plasma treatment on the AlGaN surface. This method effectively suppresses interface defects, resulting in improved electrical properties such as reduced interface trap density (Dit), threshold voltage (Vth) shift, increased drain current density (Id), and enhanced transconductance density (gm). Furthermore, this surface treatment demonstrates the potential for process simplification by improving the electrical characteristics of power semiconductor devices without the need for complex deposition steps.

κ-phase Ga₂O₃ is a wide-bandgap semiconductor that has attracted attention for power and optoelectronic device applications. However, its crystal quality and optical properties are highly dependent on the growth temperature, which motivates the need for a systematic study. In this work, κ-Ga₂O₃ thin films were grown on AlN/sapphire templates using mist-CVD at different temperatures. At lower temperatures (400℃), films exhibited incomplete crystallization and partial opacity, whereas higher growth temperatures (500-700℃) produced transparent films with improved properties. The bandgap was found to increase with temperature, consistent with reported values for 600-700℃, and XRD/XRC analysis confirmed that crystal quality improved with higher growth temperature. AFM analysis further revealed reductions in surface roughness and grain size variation at elevated temperatures. These findings indicate that an optimal growth window of 600-700℃ enables high-quality κ-Ga₂O₃ films, with potential implications for integrating this material on other hexagonal substrates such as SiC and GaN.

To ensure the long-term reliability of flexible photovoltaic (FPV) modules, it is crucial to develop an effective moisture barrier layer that prevents the infiltration of moisture and oxygen. We developed such a layer composed of parylene (700 nm) and AlOx (70 nm), optimizing its material properties, moisture-blocking performance, and processing conditions. The barrier layer applied to the Ethylene Tetrafluoroethylene (ETFE) substrate demonstrated a water vapor transmission rate (WVTR) of 6.33 × 10^-2 g/m²/day and an average visible light transmittance (AVT) of 85.3% over the 380-780 nm wavelength range. For the FPV module with this barrier, Damp/Heat (DH) reliability testing was conducted at 85℃ and 85% relative humidity for up to 1,000 hours. During testing, the power conversion efficiency (PCE) decreased slightly from 25.4% (0 hr) to 24.7% (1,000 hr), reflecting a minimal reduction of only 0.7%. The primary cause of degradation was identified as a -4% relative change in shortcircuit current density (JSC) before and after DH testing. Consequently, the ETFE/parylene/AlOx multilayer moisture barrier proved highly effective in ensuring the long-term reliability of solar modules.

With the advancement of the information society, the demand for highly integrated and multi-functional electronic devices is rapidly increasing. To meet these demands, high-performance transistors with low power consumption, high-speed operating, and mechanical flexibility are essential. Among various candidates, semiconducting single-walled carbon nanotubes (s-SWCNT)-based transistors, which exhibit intrinsically ambipolar characteristics, have emerged as promising components for CMOS-like circuits. In this study, s-SWCNT were selectively dispersed using rr-P3DDT, a thiophene-based conjugated polymer, and filed-effect transistors (FETs) were fabricated by inducting directional alignment for enhanced charge transport through an off-centered spin-coating process. The electrical characteristics of the fabricated s-SWCNT FETs were evaluated under various thermal annealing conditions (100℃, 150℃, 200℃, and 250℃). Off-centered spin-coated and high temperature annealed s- SWCNT FETs exhibited high field-effect mobilities over 5 cm²/Vs in both p-type and n-type operation, along with ideal Vshaped ambipolar transfer curves. These results indicate a significant enhancement in ambipolar performance due to efficient desorption of residual oxygen and water molecules in active channel via high temperature annealing. Furthermore, CMOS-like inverter circuits demonstrated an ideal inversion voltage (VIN = V_DD/2) and a high voltage gain of approximately 9.5. These findings highlight the potential of SWCNT-based materials for realizing next-generation flexible electronic circuits that combine high-performance, energy efficiency, and simplified solution-processing.

Thermal batteries are designed to activate at high temperatures (~500℃), therefore, the electrodes used in these systems are typically made into pellet form using compression molding techniques that do not involve polymer binders. However, the compression molding technique poses limitations in scaling up the electrode area without increasing thickness for high-power properties. Additionally, the tape casting method has been studied as a way to solve with, but too low a loading level is still an obstacle to practical use. This study fabricated a film cathode of high loading level (35.79 mAh·cm^-2) using the tape casting method for these problem. As utilized fabricated cathode, it investigated the influence of electrode thickness and density on electrochemical performance. Furthermore, a film cathode with a larger area but the same amount of active material as the pellet was fabricated, enabling the design of high-power cells with the same energy density. We expect that the fabricated film cathode with a high loading level and scalable area will enable the development of various thermal battery designs.

Ga₂O₃ is an ultra-wide bandgap semiconductor material that offers superior electrical properties for high-voltage power electronics but suffers from poor thermal conductivity compared to conventional semiconductors. To overcome this thermal limitation, we developed Ga₂O₃/4H-SiC heterojunction Schottky barrier diodes that utilize the high thermal conductivity of SiC substrates. Using the aerosol deposition method, we successfully fabricated devices with different Ga₂O₃ film thicknesses (0.8-1.4 μm) and achieved exceptional electrical performance with the 0.8 μm device showing a specific on-resistance of 41 mΩ·cm² and a leakage current as low as 1.26 × 10^-10 A/cm² while maintaining stable operation up to 200℃. The devices demonstrated breakdown voltages reaching 2,365 V and maintained excellent rectification ratios above 1010 even at elevated temperatures. All fabricated devices with different film thicknesses showed consistent high-temperature stability, confirming the effectiveness of the heterojunction approach. These results provide a viable pathway for developing thermally stable, high-performance power devices essential for next-generation electric vehicle and renewable energy applications

The rapid evolution of wearable technology has driven a surge in demand for sustainable, self-powered electronic devices. Flexible thermoelectric materials, capable of converting body heat into electricity, have emerged as a promising solution for powering next-generation wearables. This review comprehensively examines recent progress in organic (polymer-based) and hybrid thermoelectric materials, focusing on their design, fabrication, and integration into flexible architectures suitable for conformal contact with human skin. Key developments include advanced doping strategies, post-treatment techniques, and composite engineering, particularly in conductive polymers such as PEDOT: PSS and P3HT, which have significantly enhanced power factors and mechanical flexibility. Additionally, the integration of high-performance inorganic materials into stretchable systems has further elevated device efficiency and durability. The review highlights breakthroughs, ongoing challenges, and future opportunities in realizing practical, scalable, and high-efficiency wearable thermoelectric generators for sustainable energy harvesting applications.

NTC (negative temperature coefficient) thermistors are semiconductor ceramics whose resistance decreases with increasing temperature, making them essential components in various temperature sensing applications. Typically, ceramic materials are sintered at high temperatures exceeding 1,150°C. However, in laminated devices incorporating internal electrodes, co-sintering can lead to cracking and mechanical failure due to mismatches in the thermal expansion coefficients between the ceramic layers and metal-based electrodes. Moreover, the use of noble metal electrodes increases production costs. To address these challenges, a low-temperature sintering approach is required. Previous studies have demonstrated that incorporating glass frit can reduce the sintering temperature of ceramics, although this often results in increased electrical resistance. In this study, NiMnCoO₄ (NMC) ceramics, as a representative NTC thermistor composition, were prepared with the addition of 10 wt% glass frit. To mitigate the resulting increase in resistivity, trace amounts (1 wt%) of various metal oxides, including CuO, ZnO, and MnO, were introduced. Among these, the addition of CuO notably decreased both the resistivity and B constant values. In contrast, MnO had little effect on resistivity, while ZnO led to an increase. With respect to the B25/85 constant, samples containing MnO and ZnO exhibited higher values than those without metal oxide additives. These findings indicate that the incorporation of 1 wt% CuO is effective in reducing the increased resistivity in NMC ceramics subjected to low-temperature sintering via glass frit addition.

The mounting demand for sustainable, self-powered biomedical devices, particularly those engineered for extreme environments, has established triboelectric nanogenerators (TENGs) as a prominent technology in energy harvesting research. This review examines state-of-the-art biomaterial synthesis strategies essential for developing high-performance bioelectronic TENGs that can operate reliably under harsh conditions, including elevated temperatures, extreme humidity, and mechanical strain. It begins with a comprehensive overview of the fundamental principles of triboelectricity and subsequently addresses the pivotal challenges associated with efficient charge generation and retention in such challenging settings. The content places particular emphasis on recent advancements in composite material engineering and structure design for high-efficiency mechanisms, with a particular focus on biocompatible and environmentally resilient materials. The integration of TENGs into wearable sensors, implantable devices, and self-powered monitoring systems is also investigated, demonstrating their transformative potential for bioelectronic applications. Our goal subsequently underscores persistent limitations to overcome, including those pertaining to fabrication scalability and long-term operational stability, while concurrently proposing prospective research directions. Consequently, this work underscores how innovative biomaterial synthesis and bioelectronic devices can enable the development of next-generation, high-performance, self-powered devices suited for extreme biomedical environments.

Lithium-ion batteries are utilized as an energy source for electric vehicles because of their advantages such as excellent cyclability, high energy density, high capacity, high efficiency, and low price. However, lithium-ion batteries use combustible electrolytes, which have also reported problems related to fire safety. Therefore, research on the fire safety of lithium-ion batteries is actively being conducted. In this study, detection criteria for the fire safety of lithium-ion batteries were proposed through incremental capacity analysis (ICA) and frequency analysis. The experimental results showed that the battery micro internal short circuit (MISC) indicator could be identified through changes in specific frequency bands and fluctuations in the ICA curve.

The thermal management issue in OLED (organic light emitting diode) devices has a significant impact on the efficiency, reliability, and life time of the device. In particular, in OLED systems with multipolar or double cathode electrodes, it is important to accurately interpret the effect of heat generated by current flow between electrodes on the emitting layer. In this study, the governing equation was established based on the heat conduction equation to mathematically model and analyze this heat distribution, and the heat distribution analysis was performed using the COMSOL program. It was confirmed that the temperature generated in the OLED with the double cathode structure reached a maximum of 343.157 K centered on the emitting layer. The heat distribution generated in the proposed OLED structure with the double cathode electrodes was confirmed to be highly distributed in the center toward the double cathode electrodes, which is believed to be because the arrangement of the double cathode electrodes improves the symmetrical distribution of temperature while reducing power consumption.

NTC thermistors are essential components widely used for temperature sensing in various electronic sensor applications. However, conventional NTC thermistor ceramics typically require high sintering temperatures above 1150℃, necessitating the use of high-cost noble metal electrodes such as palladium (Pd) or platinum (Pt), which increases the overall manufacturing cost. In this study, low-melting-point oxides were successfully introduced as sintering aids to reduce the sintering temperature of NiMnCoO₄-based semiconducting ceramics. As the additive content increased, the B constant and average grain size exhibited an increasing trend, while the sample containing 5 wt% additives showed the lowest room-temperature resistivity. Furthermore, samples sintered at 1000℃ demonstrated slightly higher room-temperature resistivity and B constant values compared to those sintered at 1150℃. These results confirm that the addition of low-melting-point oxides is effective in lowering the sintering temperature of NiMnCoO₄ ceramics, suggesting the potential for reducing production costs and improving design flexibility in thermistor fabrication.

The continuous and long-lasting monitoring of physiological signals induced from the human body is crucial for health monitoring, disease diagnosis, and treatment. In this study, we have reported the Seebeck effect-based flexible selfpowered temperature sensor which can convert the electric signals from lateral temperature difference. For demonstrating temperature sensor arrays, the p-type thermoelectric (TE) composite films were fabricated by dispersing the Bi_0.5Sb_1.5Te₃ (BST) powders inside poly-vinylidene fluoride matrix and subsequently attached to the patterned electrode foils. The inorganic BST powders-embedded TE composite films with activated area of 0.5 × 1 cm² harvest a maximum voltage of 1.7 mV, a maximum current of 5.6 mA, and an output power of 2.6 nW from the temperature gradient (ΔT) of 20 K. Finally, the fabricated selfpowered temperature sensor array well detected the pattern images of external thermal source of ΔT = 20 K. This study manifests flexible temperature sensor array which paves the way for further advancements in this field.

In this study, we investigated the electrical stability and performance enhancement of In₂O₃ thin-film transistors (TFTs) through hydrogen peroxide (H₂O₂) and ultraviolet (UV) treatment under controlled temperature conditions. The In₂O₃ TFTs were fabricated using a sol-gel process, followed by H₂O₂ treatment at 40, 50, and 60℃ in combination with UV irradiation. The impact of these processing conditions on the device characteristics, including mobility (μ), threshold voltage (Vth), subthreshold swing (S/S), and on/off current ratio, was systematically analyzed. The results indicate that the 50℃ TFTs exhibited the most stable electrical performance, with minimal Vth shift under negative bias stress (NBS) conditions and optimized switching behavior. Furthermore, static inverter measurements confirmed the reliable voltage transfer characteristics (VTCs) and gain performance of the optimized In₂O₃ TFTs. These findings suggest that the proposed H₂O₂ and UV treatment technique can effectively improve the reliability and long-term stability of In₂O₃-based electronic devices, making them promising candidates for future electronic applications.

Aggressive device scaling has severely degraded the switching characteristics of CMOS transistors. This issue has led to the development of tunneling FETs (TFETs) as an alternative. TFETs, with their asymmetric doping of the source and drain regions, offer improved subthreshold swing (SS) compared to conventional MOSFETs. However, despite this advantage, TFETs still suffer from ambipolar current, which increases off-state current (IOFF). This paper introduces an approach to applying hetero gate dielectrics (HGDs) in nanosheet (NS) TFETs to reduce ambipolar current characteristics. The magnitude of the drain electric field is reduced by selectively forming a high-k dielectric near the source region This configuration allows the TFETs to avoid unintended band-to-band tunneling (BTBT) and suppress ambipolar current during the off-state.

The growing demand for miniaturized, lightweight, and sustainable electronic devices has intensified the need for advanced bonding materials. Existing electrically conductive adhesives (ECAs) often rely on high silver (Ag) content, resulting in elevated costs and environmental concerns. This study successfully developed a novel ECA with significantly reduced Ag content without compromising essential electrical conductivity and adhesion performance. Experimental results revealed that the optimized ECA demonstrates electrical conductivity comparable to that of commercial products, with notable advantages in cost reduction and eco-friendliness. These advancements position the developed ECA as a promising solution for next-generation electronic manufacturing, contributing to low-carbon technologies and sustainable practices. Future applications could further broaden its use across diverse electronic systems, driving progress in environmentally conscious technologies.

This paper presents a Si-NWFET-based LC-VCO design that includes an SCA, a P-type Si-NWFET varactor, a 1.2 nH LC tank, and a bias network to linearize the varactor’s C-V characteristics, enabling a wide oscillation frequency tuning range. The circuit achieves a 24 GHz oscillation frequency with a low power consumption of 16.8 μW at a control voltage (V_ctrl) of 0.7 V. Phase noise simulations indicate an excellent -109.62 dBc/Hz at a 1 MHz offset, confirming its applicability for RFIC systems. Additionally, the proposed LC-VCO demonstrates stable performance in five major corner process analyses, ensuring robustness under extreme conditions. These results validate the durability of the design and highlight the potential of Si-NWFETbased LC-VCOs as a viable, low-power, highly integrated solution for RFIC applications. The findings underscore the suitability of Si-NWFET technology as a promising alternative to current FinFET and CMOS processes in advanced circuit design.

In this study, copper oxide thin films were fabricated by facing target sputtering system and their structural, optical, and electrical properties were investigated. Crystal phase of samples were changed by variation of oxygen flow rate from Cu to Cu₂O and CuO. Compared to Cu metal film, electrical properties of Cu₂O and CuO were relatively degraded, however, asfabricated Cu₂O and CuO indicated still low resistivity (~10^-3 Ω·cm) and high carrier concentration (~10¹⁹ cm^-3). From the results, it is thought that the copper oxide thin films Cu₂O fabricated under optimal conditions can be applied to various optoelectronic devices including ultraviolet photodetector.

Cu₂O metal oxide was synthesized using NaBH₄ as a reducing agent in this study. The transformation of Cu composite with the pH adjustment was investigated, and the conditions for Cu₂O synthesis were analyzed. As pH of the solution was changed, the synthesized Cu composite evolved into Cu/Cu₂O and Cu/Cu₂O/CuO composites. The Cu₂O composite synthesized under conditions closest to pure Cu₂O was heat-treated at 200℃. The remaining minor Cu metal was oxidized, resulting in pure Cu₂O particles with enhanced crystallinity. The synthesized Cu₂O exhibited various morphology with particle sizes of about 160~720 nm, and the shape and size of the Cu₂O particles remained significantly unchanged after heat treatment. Surface analysis was conducted to compare the changes before and after heat treatment. No significant changes were observed, except for those attributed to water evaporation. The Cu₂O synthesized via this simple chemical reduction method can be utilized in various application fields, including catalysts, optical devices, and sensors.