This paper presents a Si-NWFET-based LC-VCO design that includes an SCA, a P-type Si-NWFET varactor, a 1.2 nH LC tank, and a bias network to linearize the varactor’s C-V characteristics, enabling a wide oscillation frequency tuning range. The circuit achieves a 24 GHz oscillation frequency with a low power consumption of 16.8 μW at a control voltage (Vctrl) of 0.7 V. Phase noise simulations indicate an excellent -109.62 dBc/Hz at a 1 MHz offset, confirming its applicability for RFIC systems. Additionally, the proposed LC-VCO demonstrates stable performance in five major corner process analyses, ensuring robustness under extreme conditions. These results validate the durability of the design and highlight the potential of Si-NWFETbased LC-VCOs as a viable, low-power, highly integrated solution for RFIC applications. The findings underscore the suitability of Si-NWFET technology as a promising alternative to current FinFET and CMOS processes in advanced circuit design.
