In this study, copper oxide thin films were fabricated by facing target sputtering system and their structural, optical, and electrical properties were investigated. Crystal phase of samples were changed by variation of oxygen flow rate from Cu to Cu₂O and CuO. Compared to Cu metal film, electrical properties of Cu₂O and CuO were relatively degraded, however, asfabricated Cu₂O and CuO indicated still low resistivity (~10-3 Ω·cm) and high carrier concentration (~1019 cm-3). From the results, it is thought that the copper oxide thin films Cu₂O fabricated under optimal conditions can be applied to various optoelectronic devices including ultraviolet photodetector.
