In this study, we investigated the electrical stability and performance enhancement of In₂O₃ thin-film transistors (TFTs) through hydrogen peroxide (H₂O₂) and ultraviolet (UV) treatment under controlled temperature conditions. The In₂O₃ TFTs were fabricated using a sol-gel process, followed by H₂O₂ treatment at 40, 50, and 60℃ in combination with UV irradiation. The impact of these processing conditions on the device characteristics, including mobility (μ), threshold voltage (Vth), subthreshold swing (S/S), and on/off current ratio, was systematically analyzed. The results indicate that the 50℃ TFTs exhibited the most stable electrical performance, with minimal Vth shift under negative bias stress (NBS) conditions and optimized switching behavior. Furthermore, static inverter measurements confirmed the reliable voltage transfer characteristics (VTCs) and gain performance of the optimized In₂O₃ TFTs. These findings suggest that the proposed H₂O₂ and UV treatment technique can effectively improve the reliability and long-term stability of In₂O₃-based electronic devices, making them promising candidates for future electronic applications.
