Dye adsorption is one of the most time-consuming processes in the fabrication of dye-sensitized solar cells (DSSCs), typically requiring approximately 24 h at room temperature. In this study, the effect of adsorption temperature and time on photovoltaic performance of DSSCs was investigated in order to reduce processing time and improve device productivity. Nanoporous TiO₂ photoelectrodes were immersed in N719 dye solution at 60°C for 3 h, 10 h, 17 h, and 24 h, and their performance was compared with that of cells sensitized at room temperature for 24 h. Photovoltaic characterization under AM 1.5 illumination showed that DSSCs sensitized at 60°C exhibited improved performance compared to those sensitized at room temperature. The device sensitized at 60°C for 3 h showed comparable or higher conversion efficiency than the reference cell sensitized for 24 h at room temperature. The improvement in device performance is attributed to enhanced dye adsorption kinetics resulting from increased reaction rate between the carboxyl groups of N719 dye molecules and hydroxyl groups on the TiO₂ surface. Electrochemical impedance spectroscopy analysis revealed reduced recombination resistance at the TiO₂/dye/electrolyte interface for cells sensitized at elevated temperature. UV–Vis absorption analysis confirmed increased dye loading on the TiO₂ surface for the 60°C condition. These results demonstrate that elevated temperature dye adsorption significantly reduces processing time while maintaining photovoltaic performance, providing an effective strategy for improving manufacturing efficiency of DSSCs.

This study proposes an optimization strategy for the over-current protection (OCP) parameters of a lithium iron phosphate (LiFePO₄, LFP) battery system used in electric golf carts operating under high motor-load conditions. Real-world hillclimbing tests were conducted under four clearly defined payload/passenger conditions to analyze the transient discharge-current pro-file, voltage sag, and cell-temperature response. The maximum discharge current reached -238.2 A under the 200 kg cargopayload and one-passenger condition, and the current interval exceeding 150 A lasted up to 27 s. The maximum instantaneous power was 11.05 kW. Thermal analysis showed that the cell-temperature rise was within 2°C and the maximum measured cell temperature was 22.3°C. Linear regression of voltage and current yielded R² = 0.9368 and dV/dI = 0.0126 Ω, which was used as the DC internalresistance estimate. Based on these quantitative results and the cell specification limit of 300 A continuous discharge, the OCP threshold was reviewed from 250 A to 280 A to improve driving continuity while remaining below the allowable continuous-discharge current. EIS-based SOH estimation and the AI-BMS variable protection logic are presented as an extension framework for reflecting temperature and aging effects in future OCP-setting decisions.

GaN nanowire (NW)-based hybrid structures have attracted attention for optoelectronic applications due to their high surface area and efficient carrier transport. However, the optical transparency of GaN NWs is often limited by unintended residual species accumulated on the surface and in the inter-wire regions, as well as defect-related absorption, leading to reduced light transmission. In this work, we demonstrate that thermal annealing significantly improves the optical transparency of GaN NWs grown on indium tin oxide (ITO)/glass substrates. The transmittance increased from 47.9% to 78.5% at 550 nm after rapid thermal annealing at 800^oC for 3 min, while a comparable value (~75.5%) was achieved at 600^oC for 5 min. PbBr₃ was deposited onto the GaN NWs to form hybrid structures, and temperature-dependent photoluminescence (TDPL) measurements revealed enhanced emission stability with suppressed peak shift and reduced spectral broadening. Arrhenius analysis based on a two-channel model revealed that the activation energy of the dominant non-radiative recombination pathway increased from 62 meV in the as-grown sample to 85 meV after thermal annealing, while its relative contribution remained nearly unchanged. In contrast, the shallow trap-assisted pathway exhibited a similar activation energy of approximately 6 meV in both samples, but its contribution decreased from 0.35 to 0.17 after annealing. As a result, the internal quantum efficiency (IQE) improved from 75.9% to 87.4%. These results show that thermal annealing improves optical transparency by removing residuals and suppresses defect-related recombination, leading to enhanced carrier dynamics and improved optical performance of PbBr₃-based hybrid structures.

The continuous rise of atmospheric carbon dioxide (CO₂) emissions highlights the urgent need for sustainable air purification technologies. Current Direct Air Capture (DAC) filters often rely on toxic amines, which limit long-term stability and safe application. Here, we report a non-toxic PAN-based nanofiber air filter fabricated by electrospinning and urea-assisted carbonization. Structural analyses confirmed the introduction of nitrogen functionalities that enhanced CO₂ affinity, while SEM and FT-IR revealed graphitic carbon formation. In air-chamber tests, the optimized carbonized nanofiber reduced CO₂ concentration from 25,000 ppm to 2,000 ppm, a level generally regarded as acceptable for indoor environments, while simultaneously removing over 95% of PM₁₀, PM_2.5, and PM_0.1 particulates. This dual functionality, combined with facile fabrication and material safety, demonstrates strong potential for PAN-derived carbon nanofiber membranes in DAC systems and eco-friendly air purification devices. These findings suggest a viable pathway toward scalable, sustainable air-filter technologies for carbon-neutral applications.

Silicon carbide (SiC) power devices are attracting increasing attention for high-voltage and high-efficiency applications due to their superior material properties. However, achieving an optimal trade-off between specific on-resistance (Ron,sp) and breakdown voltage (BV) remains a key design challenge in planar MOSFET structures. In this study, twodimensional TCAD simulations were conducted to investigate the impact of varying the doping concentrations of the P-well (from 3 × 10¹⁷ to 6 × 10¹⁷ cm^-3) and JFET regions (from 1 × 10¹⁶ to 7 × 1016 cm^-3) on the electrical characteristics of 2.4 kVclass planar SiC MOSFETs. To maintain comparable BV conditions for 2.4 kV operation, two groups with P-well doping concentrations of 4.5 × 10¹⁷ cm^-3 and 5.3 × 1017 cm^-3 were analyzed and compared. When the P-well and JFET doping concentrations were 4.5 × 10¹⁷ cm^-3 and 1.5 × 10¹⁶ cm^-3, respectively, the simulated Ron,sp and BV were 1.41 mΩ·cm² and 3,150 V. In contrast, with P-well and JFET doping concentrations of 5.3 × 10¹⁷ cm^-3 and 5.0 × 10¹⁶ cm^-3, the Ron,sp was reduced to 1.31 mΩ·cm² while the BV slightly increased to 3,200 V. Based on these results, an optimized device structure was proposed, demonstrating its potential for integration into high-voltage SiC-based power systems. This study provides practical design insights and is expected to contribute to the advancement of wide bandgap semiconductor technologies for next-generation power electronics.

With the rapid development of digital technologies such as IoT, AI, and big data, electrical energy consumption is rapidly increasing. Electrical facilities that supply electrical energy are operated with high reliability and stability for end-of-life time. In addition, depending on the type of electrical load that consumes electrical energy in various forms, electrical insulation systems deteriorate due to electrical and thermal stress, which reduces electrical and mechanical insulation strength. Due to such continuous stress and electrical transient phenomena, electrical facilities may experience electrical accidents due to electrical insulation breakdown before the expected design lifetime. In addition, periodic inspections according to related regulations must be conducted to prevent unexpected electrical accidents, but this leads to problems in which the electrical facilities cannot be turned off. Therefore, it is believed that an uninterruptible diagnostic judgment technique that determines compliance with related regulations such as electrical facility technology standards, internal wiring regulations, and inspection regulations without turning off the electrical facilities and at the same time detects abnormal conditions of the facilities early, it is possible to prevent electrical accidents and improve the efficiency of electrical facilities. In this paper, we propose an uninterruptible power diagnosis judgment technique that can prevent or reduce electrical accidents in cast-iron transformers by applying judgment criteria of diagnostic sensors for various types of measurement parameters that can diagnose and evaluate the presence or absence of abnormalities in electrical equipment, including partial discharge, and AI algorithms learned from data of diagnostic sensors.

Drain Induced Barrier Lowering (DIBL) was analyzed when the channel of Gate-All-Around (GAA) FET, which is the most promising in the miniaturizing transistor structure, has an elliptic cross-section. The oxide film structure used a stacked Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) structure using SiO₂ and ferroelectric. An analytical DIBL model was presented to analyze the DIBL in elliptic GAA FET with ferroelectric. Its validity was proven by comparing the results of other papers. As a result, the Drain Induced Barrier Rising (DIBR) effect, that is, the negative DIBL effect, appeared depending on the ferroelectric thickness tfe, and the ratio of the remanent polarization Pr and coercive field Ec in the ferroelectric, Pr/Ec. The DIBL varied linearly with tfeEc/Pr, and the slope depended on the rate of change for the drain voltage of the ferroelectric charge Q, dQ/dVds. The tfeEc/Pr value satisfying DIBL=0 mV/V decreased as eccentricity increased. The ferroelectric thickness tfe will have to be decreased because the subthreshold swing increases if the Pr/Ec is increased to reduce the tfeEc/Pr value. The threshold voltage increased at this time, but the effect was minimal.

This paper presented an analytical SS model to determine the subthreshold swing (SS) of an elliptic junctionless Gate- All-Around (GAA) FET using ferroelectric. Analyzing a GAA FET with an elliptic cross-section was essential because it is difficult to manufacture a perfectly circular GAA FET. The results of the proposed SS model agreed well with 2D numerical simulation. Using this analytical SS model, SS was analyzed for the eccentricity and the ratio (P_r/E_c) of permanent polarization P_r and coercive electric field E_c in an elliptic junctionless GAA FET with an MFMIS (Metal-Ferroelectric-Metal-Isulator- Semiconductor) structure using ferroelectric. As a result, the changing rate of the average surface potential due to the gate voltage increased and SS decreased as the eccentricity increased. It was found that the inner gate voltage amplified more than the outer gate voltage due to the ferroelectricity, better controlling the carriers in the channel, thereby reducing SS. As the P_r/E_c decreased, the changing rate of the ferroelectric charge for the outer gate voltage increased and SS decreased. As the eccentricity increased, the changing rate of SS for P_r/E_c decreased. There was no significant change in SS until the eccentricity was about 0.5. The SS began to decline above 0.5 due to the changes in ferroelectric charge, inner gate voltage, and average surface potential for the outer gate voltage.

This paper presents a Si-NWFET-based LC-VCO design that includes an SCA, a P-type Si-NWFET varactor, a 1.2 nH LC tank, and a bias network to linearize the varactor’s C-V characteristics, enabling a wide oscillation frequency tuning range. The circuit achieves a 24 GHz oscillation frequency with a low power consumption of 16.8 μW at a control voltage (V_ctrl) of 0.7 V. Phase noise simulations indicate an excellent -109.62 dBc/Hz at a 1 MHz offset, confirming its applicability for RFIC systems. Additionally, the proposed LC-VCO demonstrates stable performance in five major corner process analyses, ensuring robustness under extreme conditions. These results validate the durability of the design and highlight the potential of Si-NWFETbased LC-VCOs as a viable, low-power, highly integrated solution for RFIC applications. The findings underscore the suitability of Si-NWFET technology as a promising alternative to current FinFET and CMOS processes in advanced circuit design.

This study investigates the effects of chemical etching for anti-glare (AG) treatment and the subsequent deposition of a TiZrO₂/SiO₂ double-layer anti-reflection (AR) coating on glass surfaces. The AG treatment was performed using ammonium fluoride in gel form via screen printing, followed by electron beam deposition of SiO₂/TiZrO₂ layers. The surface roughness, optical transmittance, and refractive index were analyzed. The results revealed that while the surface roughness increased with larger screen patterns during the AG treatment, it was reduced by the deposition of the AR layers. Additionally, the gloss caused by external light was higher with lower surface roughness, but it was effectively reduced by the AR coating. The optical reflectance showed minimal changes during the AG treatment, remaining similar to that of bare glass substrates. However, the AR coating significantly decreased reflectance. The combination of AG treatment and AR coating improved optical transmittance and reduced gloss, making this method beneficial for enhancing visibility in automotive displays. The findings suggest that this approach can mitigate the impact of external light and improve the clarity of displayed information, making it suitable for automotive display applications.

Recently, as environmental issues caused by gas stoves have led to the widespread adoption of induction appliances, specialized cookware for induction is essential. However, due to the inability of ceramic containers to be directly used on induction cooktops, a conductive coating is required on the bottom of the cookware, presenting limitations such as complex deposition processes and extended coating times in existing methods including thermal spraying, dip coating, and transcription method. We confirmed the potential of heat-resistant cookware for induction use by coating the bottom of the ceramic container with Ag through a simple manufacturing process of screen-printing and measuring its thermal conductivity and reliability. The Ag-coated ceramic cookware produced by screen-printing demonstrated similar thermal conductivity and reliability to those made using the traditional method of transfer printing. In addition, the adhesive strength before and after thermal shock testing was even superior in the screen-printing method, which suggests a higher expected lifespan. As a result, it is expected that induction-compatible heat-resistant ceramic containers with excellent performance and lifespan will be manufactured through the screen-printing process, which is more cost-effective and efficient compared to other methods.

This review examines the use of halide perovskite materials in electronic devices, highlighting their exceptional optoelectronic properties and the challenges associated with them. Despite their potential for high-performance devices, practical applications are limited by sensitivity to environmental factors such as moisture and oxygen, etc. We discuss advances in enhancing stability and operational reliability, featuring innovative synthesis methods and device engineering strategies that help mitigate degradation. Furthermore, we explore the integration of perovskites in applications such as field-effect transistors and LEDs, emphasizing their transformative potential. This review also outlines future research directions, stressing the need for ongoing improvements in material stability and device integration to fully realize the commercial potential of perovskites.

Mn-doped Pb(In_1/2Nb_1/2)O₃-Pb(Mg_2/3Nb_1/3)O₃-PbTiO₃ (Mn:PIN-PMN-PT) single crystals, which exhibit improved phase transition temperatures and coercive field properties compared to Pb(In_1/2 Nb_1/2)O₃-Pb(Mg_2/3Nb_1/3)O₃-PbTiO₃ (PIN-PMNPT) single crystals, are expected to be utilized in high-power acoustic transducers. Bridgeman method, growing single crystals along the axial direction from melt, is most widely used method for single crystal growth with large size and high quality. However, single crystal boules grown by the Bridgeman method demonstrate a PT compositional variation, giving rise a distribution of crystal structure and material properties along the growing axis. To employ piezoelectric single crystals grown by the Bridgeman method for acoustic transducers, it is essential to investigate their overall property distribution. In this study, the compositional distribution and property variation of Mn:PIN-PMN-PT single crystals grown by the Bridgeman method was investigated. Measured compositional distribution of PT was from 29% to 32.5% in the Rhombohedral crystal region of the boule. Two types of specimen, [011]-poled Mn:PIN-PMN-29PT and Mn:PIN-PMN-32PT single crystals, were fabricated and tested to obtain full property variation at both ends of the Rhombohedral crystal region. The properties related to the 32 directional vibration mode and the properties related to high-power driving were measured to confirm the overall distribution of properties by composition.

In this study, Iron (III) oxide-hydroxide (δ-FeOOH) was successfully synthesized using hydrogen peroxide (H₂O₂) as an oxidizing agent. The synthesis of δ-FeOOH was carried out by controlling the amount of H₂O₂, and pure δ-FeOOH was successfully synthesized in ranges from 0.2 mL to 0.6 mL of H₂O₂. The size of the synthesized δ-FeOOH particles was compared by controlling the amount of oxidant H₂O₂. The average particle size of the synthesized pure δ-FeOOH particles increased from 875.1 nm to 897.2 nm as the amount of H₂O₂ was increased. The optical properties of δ-FeOOH synthesized under these specific conditions were investigated. All δ-FeOOH showed a similar trend of increasing and decreasing light absorption from 800 nm to 400 nm, although there was a slight difference in the amount of light absorption, with the largest amount of light absorption at 410 nm. The band gap energy of δ-FeOOH through the Tauc plot method was about 2.1~2.2 eV when H₂O₂ was 0.2~1.4 mL. With a sufficient small particle size, simple control of that particle size, and a small band gap energy enough to absorb light in the visible spectrum, δ-FeOOH could be useful in a variety of applications, including photoelectrochemistry and battery electrodes.

In electrical power substations, bulky iron-core potential transformers (PTs) are installed in a tank of gas-insulated switchgear (GIS) to measure system voltages. This paper proposed a low-power voltage transformer (LPVT) that can replace the conventional iron-core PTs in response to the demand for the digitalization of substations. The prototype LPVT consists of a capacitive voltage divider (CVD) which is embedded in a spacer and an impedance matching circuit using passive components. The CVD was fabricated with a flexible PCB to acquire enough insulation performance and withstand vibration and shock during operation. The performance of the LPVT was evaluated at 80%, 100%, and 120% of the rated voltage (38.1 kV) according to IEC 61869-11. An accuracy correction algorithm based on LabVIEW was applied to correct the voltage ratio and phase error. The corrected voltage ratio and phase error were +0.134% and +0.079 min., respectively, which satisfies the accuracy CL 0.2. In addition, the voltage ratio of LPVT was analyzed in ranges of -40~+40℃, and a temperature correction coefficient was applied to maintain the accuracy CL 0.2. By applying the LPVT proposed in this paper to the same rating GIS, it can be reduced the length per GIS bay by 11%, and the amount of SF6 by 5~7%.

In this study, we successfully synthesized copper oxide (Cu₂O) particles through a hydrothermal method at a relatively low temperature (150℃). The synthesis involved the precise control of molar concentrations of NaOH. Notably, Cu₂O particles were effectively synthesized when NaOH concentrations of 0.15 M and 0.20 M were utilized. While attempts were made at different molar concentrations, the synthesis of pure Cu₂O particles was only achieved at concentrations of 0.15 M and 0.20 M. In this experimental investigation, Cu₂O synthesized under these specific conditions exhibited absorption characteristics within the wavelength range of 640 to 570 nm, consistently exhibiting a band gap energy of 1.9 eV. These Cu₂O particles, characterized by their small band gap energy and straightforward synthetic method, hold significant promise for various applications including semiconductors and solar cells.

This paper is a study on the optimal microdroplet generation conditions in indirect charging electrostatic spraying. Unlike the direct charging method, which applies power to the nozzle, the indirect charging method applies power to the discharge electrode between the nozzle and the collection electrode. Therefore, an electrically simplified system can be obtained by minimizing the insulation part a stable spray pattern can be obtained with a wide spray angle, and a stable spray pattern can be obtained with a wide spray angle. To conduct the study, an indirect charging type electrostatic spray visualization system was constructed and the static characteristics of the microdroplets were analyzed through image processing of the spray shape of the microdroplets. The total number of microdroplets and the number of microdroplets per power consumption are confirmed according to the changes in the distance between the discharge electrode and the collection electrode, the flow rate, and the applied voltage, which affect the generation of microdroplets, and using this, the optimal generation conditions are derived and the corresponding microdroplet size distribution was analyzed. As a result of the experiment, it was confirmed that the optimal generation condition was at a flow rate of 15 to 20 mL/min and a voltage of -22.5 to -25 kV in terms of the number of microdroplets, and at a flow rate of 15 to 20 mL/min and a voltage of -20 kV in terms of energy consumption efficiency.

This paper is an experimental study on the optimal operating conditions of direct charging type electrospray for particulate matter collection. To perform the research, a direct charging type electrospray visualization system was configured to photograph the spray shape of microdroplets, and experiments were performed with varying electrode distance, flow rate, and applied voltage, which are the main factors affecting the particulate matter collection efficacy. Through image processing, the total number of microdroplets according to each condition was analyzed, and the number of microdroplets with a diameter of 1.5 mm or less was confirmed. In addition, by calculating the number of microdroplets per power consumption according to the applied voltage, the optimal operating conditions were derived in terms of energy consumption efficacy, and the microdroplet size distribution was analyzed under the optimal operating conditions. As a result of the experiment, it was confirmed that the optimal operating condition was at a flow rate of 10 mL/min and a voltage of -20 kV in case of 5 mm electrode distance, and at a flow rate of 15 mL/min and a voltage of -30 kV in case of 100 mm electrode distance.

Multilayered actuators using Pb(Mg_1/3Nb_2/3)O₃-Pb(In_1/2Nb_1/2)O₃-PbTiO₃ (PMN-PIN-PT) crystals have demonstrated excellent properties, but are costly and lack mechanical strength. Textured PMN-PIN-PT ceramics exhibit robust mechanical strength and comparable properties to their single crystals form. However, the development of multilayered actuators using textured PMN-PIN-PT ceramics has not been achieved until now. This study presents the development of a multilayered actuator using textured 0.37PMN-0.29PIN-0.34PT ceramics with an Ag0.9/Pd0.1 inner electrode, co-fired at 950℃. A random 0.37PMN- 0.29PIN-0.34PT ceramics multilayered actuator was also developed for comparison. The multilayered actuator consisted of 9 ceramic layers (36 μm thickness) with an overall actuator thickness of 0.401 mm. The textured and random 0.37PMN-0.29PIN- 0.34PT ceramics-based multilayered actuators achieved displacements of 0.61 μm (0.15% strain) and 0.23 μm (0.057% strain) at a low applied peak voltage of 100 V. These results suggest that the developed multilayered actuator using high-performance textured 0.37PMN-0.29PIN-0.34PT ceramics has the potential to replace expensive single crystal-based actuators costeffectively.

The utilization of scanning transmission electron microscopy (STEM) in conjunction with cathodoluminescence (CL) has emerged as a valuable tool for the investigation of material optical properties. In recent years, this technique has facilitated significant advancements in the fields of plasmonics and quantum emitters by surpassing prior technical restrictions. The review commences by providing an outline of the diverse STEM-CL operating modes and technical aspects of the instrumentation. The review explains the fundamental physics of light production under electron beam irradiation and the physical basis for interpreting STEM-CL experiments for different types of excitations. Additionally, the review compares STEM-CL to other related techniques such as scanning electron microscope CL, photoluminescence, and electron energy-loss spectroscopy.

Perovskite materials are promising candidates for next-generation optoelectronic devices owing to their outstanding external quantum efficiency, high color purity, and ability to tune the light emission wavelength. However, conventional thermal annealing processes caused the degradation of perovskite, resulting in poor optoelectronic properties and a short lifetime. Herein, we propose a laser-induced recrystallization of perovskite thin film to enhance its light-emitting properties. Laser-induced recrystallization process was performed using rapid and instantaneous laser heating, which successfully induced grain growth of the perovskite material. The laser processing conditions were thoroughly optimized based on theoretical calculations and various material analyses such as x-ray diffraction, scanning electron microscope, and photoluminescence spectroscopy.

Nano Pt particles were dispersed on carbon-based supports by a polyol process for a catalyst application in a polymer electrolyte fuel cell. We tried to optimize the effect of pH on the electrostatic forces between the support and the Pt colloids. We investigated the relationship among the surface charges on the carbon support, the solution pH, and the concentration of a glycolate, and the Pt particle size. The produced catalyst with nano Pt particles on the support was evaluated by the long-term cyclic voltammetry (CV) performance test and compared with the results from a commercial catalyst. Our experimental results reveal that the pH-control can modify the particle size distribution and the dispersion of the nano Pt particles. This resulted in a cost-effective method for the synthesis of highly Pt loaded Pt/C catalysts for fuel cells better than a commercial catalyst system.

Recently, the global demands for high voltage power semiconductors are increasing across various industrial fields. The use of electric cars with high safety and convenience is becoming practical, and IGBT modules of 3.3 kV and 1.2 kA or higher are used for electric locomotives. Delicate design and advanced process technology are required, and research on the optimization of high-voltage IGBT parts is urgently needed in the industry. In this study, we attempted to design a simulation process through TCAD (technology computer-aid design) software to optimize the process conditions of the fielding process among the core unit processes for an especial high yield voltage. As well, the prior circuit technology design and a ring pattern with a large number of ring formation structures outside the wafer similar to the chip structure of other companies were constructed for 3.3 kV NPT-IGBT through a unit process demonstration experiment. The ring pattern was designed with 21 rings and the width of the ring was 6.6 μm. By changing the spacing between patterns from 17.4 μm to 35.4 μm, it was possible to optimize the spacing from 19.2 μm to 18.4 μm.

Calcium fluoride (CaF₂) single crystal is applied to numerous industrial applications, especially for optical uses. To have excellent optical transmission properties, however, CaF₂ crystals should be carefully fabricated through liquid-phase crystal growth techniques. In this study, as one of the early stage research activities to grow CaF₂ crystals with a good transmittance at the ultraviolet wavelength range, computational thermodynamic models were provided to deepen the understanding of the crystal growing processes of CaF₂ under various conditions. To remove point defects and oxygen impurities in the grown CaF₂ crystals, the system was thermodynamically evaluated to get optimal process conditions. From the reviews of previous experimental studies, computational thermodynamic approaches were found to be an effective and powerful tool to understand the meaning of the crystal growth processes and to obtain optimal process conditions.

As a process to improve the insulation performance of VIs (Vacuum Interrupters), AC voltage conditioning is generally adopted by many manufacturers. Although the insulation performance is enhanced easily with AC Voltage conditioning, it has limitations when high recovery voltage is required due to high voltage rate or capacitive current switching. In particular, impurities such as oxides segregated on the electrode surface can be removed not by the energy level of the voltage conditioning but by the higher energy level achieved by the current conditioning process In this article, the current conditioning was carried out in various conditions and its validity was examined. The current conditioning was processed by changing the amplitude of applied current, arc time, the number of tests, and frequency. The insulation performance and the status of contact surface were checked as well. We concluded that as the applied charge quantity and the conditioning coverage area increase, the conditioning effect is much higher.

Recently, piezoelectric devices, such as ultrasonic surgery, ultrasonic atomizer, and ultrasonic speaker, are analyzed and designed by finite element simulation methods. However, the discrepancy between the design and the experiment results of the device typically occurs due to the inaccuracy of the piezoelectric material properties. To improve the simulation accuracy, the material properties of the PZT ceramics were better refined using parameter estimation method. The material parameters are elastic stiffness c^E_ij and piezoelectric constant e_ij of PZT ceramics. The impedance curve characteristics for the LTE mode of PZT ceramics were calculated. The mismatch between the simulation and the experimental data were compared and minimized by a least square method. Finally, the simulated impedance data were compared with the experimental data for the various vibration modes of PZT ceramics and the optimized material properties of PZT ceramics were verified. To further verify the accuracy, this method was also applied to piezoelectric PMN-PT single crystals.

Recently many efforts have been made to develop a novel class of non-fullerene electron acceptor materials for highperformance organic solar cells. In this work, anthraquinone derivatives, TMAQ and THAQ, were prepared and their availability as electron acceptor materials for organic solar cells were investigated in terms of optical, thermal, electrochemical properties, and solar cell devices. Compared to TMAQ, a significant bathochromic shift of absorption band was observed for THAQ owing to intramolecular hydrogen-bond-assisted CT interactions. Thanks to the fused aromatic ring structure and benzoquinone unit, both TMAQ and THAQ exhibited a high thermal stability and an efficient electron reduction process. In particular, the intramolecular O-H---O=C hydrogen bond of THAQ plays an important role in improving the thermal stability and electron reduction properties. In the P3HT:acceptor solar cell system, THAQ-based devices had more than ca. 6 times higher power conversion efficiency than TMAQ -based devices. These results serve as a guide for developing high-efficient anthraquinonebased electron acceptor materials.

The development of efficient electron donor (or hole-transporting) molecules that can be used in various optoelectronic device fields is highly demanded. In this work, a novel class of triptycene-based three-dimensional (3D) triphenylamine (TI-TPA) derivatives with different end substituents was designed and prepared for transparent electron donor materials. Owing to the rigid 3D triptycene framework, the obtained TI-TPA derivatives had an amorphous morphology with high thermal decomposition temperature. The oxidation potential of these TI-TPA derivatives decreased as the electron donating strength of the end substituent increased. Among TI-TPA derivatives, TI-TPA-OMe exhibited the highest HOMO level (-5.31 eV) which is similar to that of Spiro-OMeTAD (-5.22 eV). In addition, TI-TPA-OMe was found to form a strong charge transfer complex with the triptycene-based acceptor TI-BQ, leading to a new absorption band at around 640 nm. These results can be applied for developing efficient electron donor materials that can mimic the advantages of the spiro-linked structure and TPA units of Spiro-OMeTAD.

Bulky iron-core potential transformers (PT) are installed in a tank of gas insulated switchgears (GIS) for a system voltage measurement in power substations. In this paper, we studied an electronic voltage transformer (EVT) embedded in a spacer for miniaturization, eco-friendliness, and performance improvement of GIS. The prototype EVT consists of a capacitive probe (CP) that can be embedded in a spacer and a voltage Follower with a high input and a low output impedance. The CP was fabricated in the form of a Flexible-PCB to acquire the insulation performance and to withstand vibration and shock during operation. Voltage ratio of the prototype EVT is about 42,270, and the frequency bandwidth of -3 dB ranges from 0.33 Hz to 3.9 MHz. The voltage ratio error evaluated at about 6%, 12% and 18% of the rated voltage of 170 kV was 0.32%, and the phase error was 12.9 minutes. These results were within the accuracy for the class 0.5 specified in IEC 60044-7 and satisfy even in ranges from 80% to 120% of the rated voltage. If the prototype EVT replaces the conventional iron-core potential transformer, it is expected that the height of the GIS could be reduced by 11% and the amount of SF6 will be reduced by at least 10%.

Artificial neuromorphic devices are considered the key component in realizing energy-efficient and brain-inspired computing systems. For the artificial neuromorphic devices, various material candidates and device architectures have been reported, including two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskite materials. In addition to conventional electrical neuromorphic devices, optoelectronic neuromorphic devices, which operate under a light stimulus, have received significant interest due to their potential advantages such as low power consumption, parallel processing, and high bandwidth. This article reviews the recent progress in optoelectronic neuromorphic devices using various active materials such as two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskites