GaN nanowire (NW)-based hybrid structures have attracted attention for optoelectronic applications due to their high surface area and efficient carrier transport. However, the optical transparency of GaN NWs is often limited by unintended residual species accumulated on the surface and in the inter-wire regions, as well as defect-related absorption, leading to reduced light transmission. In this work, we demonstrate that thermal annealing significantly improves the optical transparency of GaN NWs grown on indium tin oxide (ITO)/glass substrates. The transmittance increased from 47.9% to 78.5% at 550 nm after rapid thermal annealing at 800^oC for 3 min, while a comparable value (~75.5%) was achieved at 600^oC for 5 min. PbBr₃ was deposited onto the GaN NWs to form hybrid structures, and temperature-dependent photoluminescence (TDPL) measurements revealed enhanced emission stability with suppressed peak shift and reduced spectral broadening. Arrhenius analysis based on a two-channel model revealed that the activation energy of the dominant non-radiative recombination pathway increased from 62 meV in the as-grown sample to 85 meV after thermal annealing, while its relative contribution remained nearly unchanged. In contrast, the shallow trap-assisted pathway exhibited a similar activation energy of approximately 6 meV in both samples, but its contribution decreased from 0.35 to 0.17 after annealing. As a result, the internal quantum efficiency (IQE) improved from 75.9% to 87.4%. These results show that thermal annealing improves optical transparency by removing residuals and suppresses defect-related recombination, leading to enhanced carrier dynamics and improved optical performance of PbBr₃-based hybrid structures.

A series of phosphors, SrWO₄:5 mol% Dy³⁺, SrWO₄:5 mol% Sm³⁺, and SrWO₄:5 mol% Dy³⁺:x Sm³⁺ (x＝1~15 mol%), were prepared using a facile co-precipitation. The crystal structure, morphology, photoluminescence properties, and application in anti-counterfeiting fields were investigated. The crystalline structures of the prepared phosphors were found to be tetragonal systems with the dominant peak occurring at the (112) plane. The excitation spectra of the Dy³⁺ singly-doped SrWO₄ phosphors were composed of an intense charge-transfer band centered at 246 nm in the range of 210~270 nm and two weak peaks at 351 nm and 387 nm due to the ⁶H_15/2→⁶P_7/2 and ⁶H_15/2→⁴I_13/2 transitions of Dy³⁺ ions, respectively. The wavelength of 246 nm was optimum for exciting the luminescence of Dy³⁺ and Sm³⁺ co-doped SrWO₄ phosphors. The emission spectra consisted of two intense blue and yellow emission bands at 480 nm and 573 nm corresponding to the ⁴F_9/2→⁶H_15/2 and ⁴F_9/2→⁶H_13/2 transitions of Dy³⁺, and two strong emission peaks at 599 nm and 643 nm originating from the ⁴G_5/2→⁶H_7/2 and ⁴G_5/2→⁶H_9/2 transitions of Sm³⁺, respectively. As the concentration of Sm³⁺ ions increased, the emission intensities of Dy³⁺ rapidly decreased, while the emission intensities of Sm³⁺ gradually increased. These results suggest that the color of the emission light can be tuned from yellow to white by changing the concentration of Sm³⁺ ions at a fixed 5 mol% Dy³⁺. Furthermore, the fluorescent security inks were synthesized for use in anti-counterfeiting applications.

Dy³⁺ and Eu³⁺-co-doped La₂MoO₆ phosphor thin films were deposited on sapphire substrates by radio-frequency magnetron sputtering at various growth temperatures. The phosphor thin films were characterized using X-ray diffraction (XRD), scanning electron microscopy, ultraviolet-visible spectroscopy, and fluorescence spectrometry. The optical transmittance, absorbance, bandgap, and photoluminescence intensity of the La₂MoO₆ phosphor thin films were found to depend on the growth temperature. The XRD patterns demonstrated that all the phosphor thin films, irrespective of growth temperatures, had a tetragonal structure. The phosphor thin film deposited at a growth temperature of 100℃ indicated an average transmittance of 85.3% in the 400~1,100 nm wavelength range and a bandgap energy of 4.31 eV. As the growth temperature increased, the bandgap energy gradually decreased. The emission spectra under ultraviolet excitation at 268 nm exhibited an intense red emission line at 616 nm and a weak emission line at 699 nm due to the ⁵D₀→⁷F₂ and ⁵D₀→⁷F₄ transitions of the Eu³⁺ ions, respectively, and also featured a yellow emission band at 573 nm, resulting from the ⁴F_9/2→⁶H_13/2 transition of the Dy³⁺ ions. The results suggest that La₂MoO₆ phosphor thin films can be used as light-emitting layers for inorganic thin film electroluminescent devices.

We investigated the temperature-dependent photoluminescence spectroscopy of colloidal InZnP/ZnSe/ZnS (core/ shell/shell) quantum dots with varying ZnSe and ZnS shell thickness in the 278~363 K temperature range. Temperature-dependent photoluminescence of the InZnP-based quantum dot samples reveal red-shifting of the photoluminescence peaks, thermal quenching of photoluminescence, and broadening of bandwidth with increasing temperature. The degree of bandgap shifting and line broadening as a function of temperature is affected little by shell composition and thickness. However, the thermal quenching of the photoluminescence is strongly dependent on the shell components. The irreversible photoluminescence quenching behavior is dominant for thin-shell-deposited InZnP quantum dots, whereas thick-shelled InZnP quantum dots exhibit superior thermal stability of the photoluminescence intensity.

New white-light-emitting SrSnO₃:Dy³⁺ phosphors were prepared using different concentrations of Dy³⁺ ions via a solid-state reaction. The phase structure, luminescence, and morphological properties of the synthesized phosphors were investigated using X-ray diffraction analysis, fluorescence spectrophotometry, and scanning electron microscopy, respectively. All the synthesized phosphors crystallized in an orthorhombic phase with a major (020) diffraction peak, irrespective of the concentration of Dy³⁺ ions. The excitation spectra were composed of a broad band centered at 298 nm, ascribed to the O^2--Dy³⁺ charge transfer band and five weak bands in the range of 350~500 nm. The emission spectra of SrSnO₃:Dy³⁺ phosphors consisted of three bands centered at 485, 577, and 665 nm, corresponding to the ⁴F_9/2→⁶H_15/2, ⁴F_9/2→⁶H_13/2, and ⁴F_9/2→⁶H_11/2 transitions of Dy³⁺, respectively. As the Dy³⁺ concentration increased from 1 to 15 mol%, the intensities of all the emission bands gradually increased, reached maxima at 15 mol% of Dy³⁺ ions, and then decreased rapidly at 20 mol% due to concentration quenching. The critical distance between neighboring Dy³⁺ ions for concentration quenching was calculated to be 9.4 Å. The optimal white light emission by the SrSnO₃:Dy³⁺ phosphors was obtained when the Dy³⁺ concentration was 15 mol%.

ZnO nanorods were grown on SiO2 coated Si wafers and glass by the hydrothermal method. The structural and optical properties variation of ZnO nanorods as a function of growing time was studied. ～10 nm-thick ZnO thin films deposited on substrates by rf magnetron sputtering were employed as seed layers. Zinc nitrate hexahydrate (0.05 M) and hexamethylenetetramine (0.05 M) mixed in DI water were used as a reaction solution. ZnO nanorods were respectively grown for 30 min, 1 h, 2 h, 3 h, and 4 h by maintaining the reactor at 90℃. Crystallinity of ZnO nanorods was analyzed by X-ray diffraction, and the morphology of nanorods was observed by a field emission scanning electron microscope. Transmittance and absorbance were measured by a UV-Vis spectrophotometer, and energy band gap and urbach energy were obtained from the data. Photoluminescence measurements were carried out using Nd-Yag laser (266 nm).

Single-layered transition metal dichalcogenides (TMDs) exhibit more interesting physical properties than those of bulk TMDs owing to the indirect to direct bandgap transition occurring due to quantum confinement. In this research, we demonstrate that layer-by-layer laser etching of molybdenum diselenide (MoSe₂) flakes could be controlled by varying the parameters employed in laser irradiation (time, intensity, interval, etc.). We observed a dramatic increase in the photoluminescence (PL) intensity (1.54 eV peak) after etching the samples, indicating that the removal of several layers of (MoSe₂) led to a change from indirect to direct bandgap. The laser-etched (MoSe₂) exhibited the single (MoSe₂) Raman vibration modes at ~239.4 cm^-1 and ~295 cm^-1, associated to out-of-plane A_1g and in-plane E¹ _2g Raman modes, respectively. These results indicate that controlling the number of MoSe2 layers by laser etching method could be employed for optimizing the performance of nano-electronic devices.

The effects of Eu3+ doping on the structural, morphological, and optical properties of MgMoO4:Dy3+,Eu3+ phosphors prepared by solid-state reaction technique were investigated. XRD patterns exhibited that all the synthesized phosphors showed a monoclinic system with a dominant (220) diffraction peak, irrespective of the content of Eu3+ ions. The surface morphology of MgMoO4:Dy3+,Eu3+ phosphors was studied using scanning electron microscopy and the grains showed a tendency to agglomerate as the content of Eu3+ ions increased. The excitation spectra of the phosphor powders were composed of a strong charge transfer band centered at 294 nm in the range of 230~340 nm and two intense peaks at 354 and 389 nm, respectively, arising from the 6H15/2→6P7/2 and 6H15/2→ 4M21/2 transitions of Dy3+ ions. The emission spectra of the Mg0.85MoO4:10 mol% Dy3+ phosphors without incorporating Eu3+ ions revealed a strong yellow band centered at 573 nm resulting from the 4F9/2→6H13/2 transitionof Dy3+. As the content of Eu3+ was increased, the intensity of the yellow emission was gradually decreased, while that of red emission band located at 614 nm began to appear, approached a maximum value at 10 mol%, and then decreased at 15 mol% of Eu3+. These results indicated that white light emission could be achieved by controlling the contents of the Dy3+ and Eu3+ ions incorporated into the MgMoO4 host crystal.

For feasible study of opto-electrical application regarding to oxide semiconductor, weimplemented the N doped ZnO growth using a atomic layer deposition technique. The p-type ZnOdeposition, necessary for ZnO-based optoelectronics, has considered to be very difficulty due tosufficiently deep acceptor location and self-compensating process on doping. Various sources of N such asN2, NH3, NO, and NO2 and deposition techniques have been used to fabricate p-type ZnO. Hallmeasurement showed that p-type ZnO was prepared in condition with low deposition temperature anddopant concentration. From the evaluation of photoluminescence spectroscopy, we could observe defectformation formed by N dopant. In this paper, we exhibited the electrical and optical properties of N-dopedZnO thin films grown by atomic layer deposition with NH3OH doping source.

CaNb2O6:RE3+ (RE=Sm or Eu) phosphor powders were prepared with different contents of activatorions by using solid-state reaction method. The X-ray diffraction patterns exhibited that the phosphors synthesized with different activator ions showed an orthorhombic system with a main (131) diffraction peak. The maximum size of the grain particles, determined from the measurement of scanning electron microscopy, was observed at 0.05 mol of Eu3+ ions and at 0.01 mol of Sm3+. As for the Eu3+-doped phosphor powders, the excitation spectra were composed of a broad band peaked at 278 nm and several weak bands in the range of 350～500 nm, and the highest red emission spectrum was observed at 0.15 mol of Eu3+ ions. As for the Sm3+-activated phosphor powders, three strong emission bands under excitation at 273 nm were observed at 570, 612, and 659 nm, respectively. The intensities of all the emission bands approached maxima for 0.05mol of Sm3+ ions. The optical properties show that the Eu3+- or Sm3+-doped CaNb2O6 powders are promising red-orange emitting phosphor powders applicable to full-color photonic devices.

ZnO thin films were deposited on a-, c- and m- plane oriented 4H-SiC substrates by pulsed laser deposition. ZnO nanowires were formed on substrates by tube furnace. Shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. Average surface roughness and root mean square surface roughness were measure by atomic force microscope. Optical properties were investigated by Photoluminescence measurement. Density of ZnO nanowires grown on a-, c- and m-plane oriented 4H-SiC substrates were 17.89 μm-2, 9.98 μm-2 and 2.61 μm-2, respectively.

We have synthesized new pure blue-emitting hyperbranched polyfluorene (Hyper-PDHF) through A2 and B3 type monomers via Suzuki coupling polymerization. The weight-average molecular weights (Mw) of the Hyper-PDHF was found about 35,000 with polydispersity index as 6.1. The UV absorption peak of the Hyper-PDHF film was at around 335 nm which was far blue shifted than that of linear PDHF film which was found at 380 nm. The pure blue photoluminescene (PL) peak of the Hyper-PDHF was measured at 419 nm as main emission with 397 and 444 nm as shoulder peaks. The Hyper-PDHF showed also higher PL quantum efficiency in solution than linear PDHF (Hyper-PDHF, Φsol =0.81; PDHF, Φsol=0.78). The annealed PDHF film (5 hrs on hot plate at 80℃) showed increased shoulder peak emissions and emission color was changed into the green emission. But, Hyper-PDHF film shows almost no excimer emission peak even the film was annealed. The enhanced PL efficiency and no excimer emission of Hyper-PDHF results from the inhibition of excimer formation by the introduction of the hyperbranched system into the polyfluorene backbone.

Abstract: The porous Si (PS) was annealed at various temperature in air, argon, and nitrogen atmosphere. Structural and optical properties of the annealed PS were investigated by scanning electron microscopy (SEM) and photoluminescence (PL). It is found that the shape of pore is changed from circle to channel as increasing annealing temperature which was annealed in air and argon atmosphere. In case of PS annealed in nitrogen atmosphere, the shape of pore is changed from channel to circle with increase annealing temperature from 600 to 800℃. The PL peak position is blue-shifted with increasing annealing temperature. As annealing temperature increases, the PL intensity of the PS annealed in argon is decreased but that of the PS annealed in nitrogen is increased. It might be due to the formation of Si-N bonds and it passivates the non-radiative centers which is Si dangling bonds on the surface of the PS.