Dy3+ and Eu3+-co-doped La2MoO6 phosphor thin films were deposited on sapphire substrates by radio-frequency magnetron sputtering at various growth temperatures. The phosphor thin films were characterized using X-ray diffraction (XRD), scanning electron microscopy, ultraviolet-visible spectroscopy, and fluorescence spectrometry. The optical transmittance, absorbance, bandgap, and photoluminescence intensity of the La2MoO6 phosphor thin films were found to depend on the growth temperature. The XRD patterns demonstrated that all the phosphor thin films, irrespective of growth temperatures, had a tetragonal structure. The phosphor thin film deposited at a growth temperature of 100℃ indicated an average transmittance of 85.3% in the 400~1,100 nm wavelength range and a bandgap energy of 4.31 eV. As the growth temperature increased, the bandgap energy gradually decreased. The emission spectra under ultraviolet excitation at 268 nm exhibited an intense red emission line at 616 nm and a weak emission line at 699 nm due to the 5D0→7F2 and 5D0→7F4 transitions of the Eu3+ ions, respectively, and also featured a yellow emission band at 573 nm, resulting from the 4F9/2→6H13/2 transition of the Dy3+ ions. The results suggest that La2MoO6 phosphor thin films can be used as light-emitting layers for inorganic thin film electroluminescent devices.
