For feasible study of opto-electrical application regarding to oxide semiconductor, weimplemented the N doped ZnO growth using a atomic layer deposition technique. The p-type ZnOdeposition, necessary for ZnO-based optoelectronics, has considered to be very difficulty due tosufficiently deep acceptor location and self-compensating process on doping. Various sources of N such asN2, NH3, NO, and NO2 and deposition techniques have been used to fabricate p-type ZnO. Hallmeasurement showed that p-type ZnO was prepared in condition with low deposition temperature anddopant concentration. From the evaluation of photoluminescence spectroscopy, we could observe defectformation formed by N dopant. In this paper, we exhibited the electrical and optical properties of N-dopedZnO thin films grown by atomic layer deposition with NH3OH doping source.
