Due to changes in the form factor of display panels and touch screen panels in various devices, capacitive touch systems have evolved to address various issues such as low power consumption, noise immunity, and small chip size. Furthermore, some devices have applications that use a stylus. Since the stylus operates similarly to a finger touch, it encounters similar issues. Recent research trends focus on addressing key issues such as noise, which is primarily caused by the self-capacitor formed between the display cathode and the touch screen panel. In this paper, Various research papers discussing methods to eliminate external noise will be reviewed. These advancements enhance noise immunity in touch systems, making it easier to use thinner and more flexible panels. These progress make touch technology more versatile and reliable in various applications.

With the increasing demand for mobile devices featuring multi-touch operation, extensive research is being conducted on touch screen panel (TSP) Readout ICs (ROICs) that should possess low power consumption, compact chip size, and immunity to external noise. Therefore, this paper discusses capacitive touch sensors and their readout circuits, and it introduces research trends in various circuit designs that are robust against external noise sources. The recent state-of-the-art TSP ROICs have primarily focused on minimizing the impact of parasitic capacitance (Cp) caused by thin panel thickness. The large Cp can be effectively compensated using an area-efficient current compensator and Current Conveyor (CC), while a display noise reduction scheme utilizing a noise-antenna (NA) electrode significantly improves the signal-to-noise ratio (SNR). Based on these achievements, it is expected that future TSP ROICs will be capable of stable operation with thinner and flexible Touch Screen Panels (TSPs).

This paper is a study on frequency analysis and electronic noise reduction of energy storage system (ESS). We acquired 4 necessary data for about 2 minutes and 4 seconds using a sampling frequency of 10,000 Hz in ESS. Fast Fourier transform (FFT) was used for electronic noise analysis from the acquired data. As a result, it was confirmed that DC component, fundamental wave, second and higher harmonic component exist. For the attenuation of harmonics, low-pass filter (LPF) was applied. We confirmed that an attenuation of approximately 59.3% appears from the second harmonic. The presence of many harmonic components in the data of the ESS was expected to occur due to the insufficiency of optimization among the modules inside the ESS. Therefore, we propose that a national certification system for ESS should be introduced to settle down the issue properly.

Radiation noise due to EMI noise generated by the driving circuits of LED lighting devices in a medical imaging room was reduced by decreasing the noise source in the driving circuits and changing the number of corrections in EMI filters. Noise attenuation and filter changes enabled driving circuits that reduced the electromagnetic waves. Such circuits were efficiently designed by using capacitors and inverters in a given space. Therefore, the malfunction of radiation devices can be minimized by using EMI-reduction filter circuits, and reliable operation of medical devices can be expected by blocking electromagnetic waves.

Channel length dependence of NBTI (negative bias temperature instablilty) and CHC (channel hot carrier) characteristics in PMOSFET is studied. It has been considered that HC lifetime of PMOSFET is larger than NBTI lifetime. However, it is shown that CHC degradation is greater than NBTI degradation for PMOSFET with short channel length. 1/f noise and charge pumping measurement are used for analysis of these degradations.

In this paper, a temperature control for LED (light emitting diode) lamp using a cooling fan is studied. An efficient temperature control scheme for the LED lamp using the fan wind at the lowest sound noise is studied. For the study, after measurement of the minimum sound noise of the fan and related temperature of the LED lamp through tests, experiments on temperature control of the LED lamp using the fan with various size of heat sinks was performed. To reduce the fan sound noise, a method of reducing the operation time with optimal size of the heat sink was studied. Also, a control of LED lamps using RF communication was studied.

In this paper, we compared and analyzed 3D silicon-oxide-nitride-oxide-silicon (SONOS) multi layer flash memory devices fabricated on nitride or oxide layer, respectively. The device fabricated on nitride layer has inferior electrical properties than that fabricated on oxide layer. However, the device on nitride layer has faster program/erase speed (P/E speed) than that on the oxide layer, although having inferior electrical performance. Afterwards, to find out the reason why the device on nitride has faster P/E speed, 1/f noise analysis of both devices is investigated. From gate bias dependance, both devices follow the mobility fluctuation model which results from the lattice scattering and defects in the channel layer. In addition, the device on nitride with better memory characteristics has higher normalized drain current noise power spectral density (S(ID)/I(D)2), which means that it has more traps and defects in the channel layer. The apparent hooge`s noise parameter (αapp) to represent the grain boundary trap density and the height of grain boundary potential barrier is considered. The device on nitride has higher αapp values, which can be explained due to more grain boundary traps. Therefore, the reason why the devices on nitride and oxide have a different P/E speed can be explained due to the trapping/de-trapping of free carriers into more grain boundary trap sites in channel layer.

In this paper, we investigated the device performance on fluorine implantation, hot carrier reliability and RTS (random telegraph signal) noise characteristics of NMOSFETs. The capacitance of the fluorine implanted NMOSFET decreased due to the increase of the gate oxide thickness. RTS noise characteristics of the fluorine implated NMOSFET was improved approximately by 46% due to the decrease of trap density at Si/SiO2 interface. The improved gate oxide quality also results in the longer hot carrier life time.

In this paper, flicker noise characteristic and channel hot carrier degradation of NMOSFETs with plasma nitrided oixde (PNO) and thermally nitrided oxide (TNO) are analyzed in depth. Compared with NMOSFET with TNO, flicker noise characteristic of NMOSFET with PNO is improved significantly because nitrogen density in PNO near the Si/SiO2 interface is less than that in TNO. However, device degradation of NMOSFET with PNO by channel hot carrier stress is greater than that with TNO although PMOSFET with PNO showed greater immunity to NBTI degradation than that with TNO in previous study. Therefore, concurrent investigation of the reliability as well as low frequency noise characteristics of NMOSFET and PMOSFET is required for the development of high performance analog MOSFET technology.

This paper dealt with the design, fabrication and application of a risk voltage measurement system (RVMS) which analyzes the step and touch voltages in electrical grounding systems. The RVMS supply 300 V and 1.4 A in ranges from 40 Hz to 1 kHz as the test power source. A DAQ module having resolution of 400 kS/s and 16 bit is equipped with 7 inputs for measuring voltage and current. Also, a noise elimination algorithm of digital filter was applied to reduce the measurement error caused by external noises as a commercial frequency current. The performance of the RVMS was evaluated by measurement of the step and touch voltage according to the IEEE standard 80 and 81 in a grounding system with a 10 m counterpoise. The result showed that the RVMS analyzes the risk voltage with the error below 5%.

The basic performance of the ground system is evaluated as the ground resistance by applying low frequency current below 1 kHz. However, characteristics of the ground system should be analyzed by high frequency current up to 1 MHz since transient currents having a few hundred kHz component flow during a line-to-ground fault and/or a lightning strike. This paper deals with the design and fabrication of a wideband ground impedance meter (WGIM) which measures the impedance of ground systems in ranges from 65 Hz to 1.28 MHz. Also, a noise elimination algorithm using a digital bandpass filter is proposed. The maximum error of the WGIM is 4.91% in the measurement frequency range.

Abstract: The continuous increase demand for electric power leads to the additional construction of transmission facilities, but it is not easy to acquire right-of-way for transmission facilities. Therefor, there is a need for compact tower that can be built on a narrow right-of-way. the compact tower with polymer insulation arm is a solution. It can be upgrading conventional 154 kV transmission line voltages to 345 kV levels. However transmission voltage is increasing, environment interference (corona noise, radio interference, etc.) will occur gradually. This environment interference is depending on the electrical clearances of tower and configuration of conductors. Therefore the analysis of the factors of environmental interference is necessary in order to upgrading transmission voltage. This paper presents the design factor of a compact tower to meet the environmental interference standard.