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채널구조와 바이어스 조건에 따른 Si0.8Ge0.2 pMOSFET의 저주파잡음 특성

최상식, 양현덕, 김상훈, 송영주, 이내응, 송종인, 심규환

Low-frequency Noise Characteristics of Si0.8Ge0.2 pMOSFET Depending upon Channel Structures and Bias Conditions

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J Electr Electron Mater 2006;19(1):1-6.
Published online: January 1, 2006
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Low-frequency Noise Characteristics of Si0.8Ge0.2 pMOSFET Depending upon Channel Structures and Bias Conditions
J Electr Electron Mater. 2006;19(1):1-6.   Published online January 1, 2006
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Low-frequency Noise Characteristics of Si0.8Ge0.2 pMOSFET Depending upon Channel Structures and Bias Conditions
J Electr Electron Mater. 2006;19(1):1-6.   Published online January 1, 2006
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