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Hafnium Oxide를 Trapping Layer로 적용한 Fin-Type SOHOS 플래시 메모리 특성연구

박정규, 오재섭, 양승동, 정광석, 김유미, 윤호진, 한인식, 이희덕, 이가원

Analysis of Fin-Type SOHOS Flash Memory using Hafnium Oxide as Trapping Layer

Jeong Gyu Park, Jae Sub Oh, Seung Dong Yang, Kwang Seok Jeong, Yu Mi Kim, Ho Jin Yun, In Shik Han, Hi Deok Lee, Ga Won Lee
J Electr Electron Mater 2010;23(6):449-453.
Published online: June 1, 2010
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Analysis of Fin-Type SOHOS Flash Memory using Hafnium Oxide as Trapping Layer
J Electr Electron Mater. 2010;23(6):449-453.   Published online June 1, 2010
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Analysis of Fin-Type SOHOS Flash Memory using Hafnium Oxide as Trapping Layer
J Electr Electron Mater. 2010;23(6):449-453.   Published online June 1, 2010
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