The development of a large-area solution process for CuO nanowires, which are promising p-type thin film transistors (TFT) channel materials, is required. To overcome the limitations of the existing high-vacuum and high-cost deposition process, a large-area Cu nanowire network was formed on the substrate using the Mayer rod coating method, and a CuO channel was implemented by subsequent thermal annealing. Consequently, p-type TFT with an on/off current ratio of 1.4×10⁴ and a field-effect mobility µ_FE≈10^-4 cm²/(V⋅s). was fabricated and optimized. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses showed that the sample annealed at 200°C exhibited an incomplete oxidation state with a mixed Cu/Cu₂O phase and a high fraction of M-OH species (58.78%), resulting in a low on/off current ratio (≈1.2). In contrast, annealing at 450°C leads to a CuOdominant phase, where the fraction of lattice oxygen(O1) increases to 31.11% and the oxygen vacancy (VO) component increases to 7.15%, indicating a significant improvement in hole concentration and charge transport. These phase transitions and surface chemical changes are identified as the key mechanisms for the enhanced TFT switching characteristics. The low-cost, large-area Mayer rodbased solution process proposed in this study provides a basic process platform for p-type TFTs applicable to flexible wearables and display technologies and suggests the possibility of commercialization through additional optimization of bias stability in the future.

This study proposes an optimization strategy for the over-current protection (OCP) parameters of a lithium iron phosphate (LiFePO₄, LFP) battery system used in electric golf carts operating under high motor-load conditions. Real-world hillclimbing tests were conducted under four clearly defined payload/passenger conditions to analyze the transient discharge-current pro-file, voltage sag, and cell-temperature response. The maximum discharge current reached -238.2 A under the 200 kg cargopayload and one-passenger condition, and the current interval exceeding 150 A lasted up to 27 s. The maximum instantaneous power was 11.05 kW. Thermal analysis showed that the cell-temperature rise was within 2°C and the maximum measured cell temperature was 22.3°C. Linear regression of voltage and current yielded R² = 0.9368 and dV/dI = 0.0126 Ω, which was used as the DC internalresistance estimate. Based on these quantitative results and the cell specification limit of 300 A continuous discharge, the OCP threshold was reviewed from 250 A to 280 A to improve driving continuity while remaining below the allowable continuous-discharge current. EIS-based SOH estimation and the AI-BMS variable protection logic are presented as an extension framework for reflecting temperature and aging effects in future OCP-setting decisions.

This paper proposes a circular sequential lighting control method to reduce current imbalance and luminance deviation among multiple LED modules in AC-powered LED lighting systems. Conventional fixed-sequence lighting control repeatedly prioritizes the same LED modules in every rectified voltage cycle, which leads to unequal current distribution, luminance non-uniformity, and the accelerated degradation of specific modules during long-term operation. To address these limitations, a circular sequential lighting strategy is introduced, in which the lighting order is cyclically rotated at every rectified cycle, ensuring that all LED modules experience equal lighting opportunities. A prototype AC-LED lighting system consisting of four series-connected LED modules was implemented and experimentally evaluated. The results demonstrate that, while the conventional fixed-sequence method produces a maximum average current deviation of up to 1.6 mA among modules, the proposed method equalizes the average current across all modules to approximately 17.1 mA. Furthermore, the flicker index remains at 0.13, which is comparable to that of the conventional method, indicating that luminance uniformity is improved without degradation of optical performance. The proposed circular sequential lighting control effectively distributes electrical stress, enhances luminance uniformity, and improves long-term reliability, making it a practical and efficient solution for high-quality AC-LED lighting applications.

The ability to manipulate and probe biomolecules at the single-molecule level has become an essential approach for understanding molecular interactions, conformational dynamics, and nanoscale transport phenomena. Advances in experimental techniques have enabled precise control of individual molecules with high spatial resolution and piconewton-level force sensitivity. These developments have significantly expanded the capability of studying biomolecular mechanics and dynamics beyond conventional ensemble measurements. A variety of physical strategies have been developed for single-molecule manipulation, including mechanical-force-based approaches, electric-field-driven methods, and nanoscale structural confinement techniques. Mechanical-force-based methods, such as optical tweezers, magnetic tweezers, and atomic force microscopy, enable direct measurement of molecular mechanical responses. Electric-field-based manipulation, represented by dielectrophoresis, allows noncontact control of particles and biomolecules through polarization effects in non-uniform electric fields. In addition, nanopore-based systems employ nanoscale confinement to regulate molecular transport and residence behavior. This review provides an overview of representative single-molecule manipulation techniques based on mechanical, electrical, and structural control and discusses their fundamental principles and implementation strategies.

Silicon carbide (SiC) MOSFETs provide superior performance compared to traditional silicon devices under hightemperature and high-power conditions, making them particularly valuable for power electronics applications requiring highfrequency switching and high-energy efficiency. As the electric vehicle (EV) market expands, these devices are commonly packaged into six-pack modules, which can show their different electrical characteristics between the bare-die device and the package due to packaging that improves heat dissipation and other properties. This study uses bare-die SiC MOSFETs to explore their intrinsic characteristics and evaluate their performance in a half-bridge configuration. A half-bridge circuit was constructed, and performance was assessed by varying driving frequencies (10 kHz and 50 kHz) and adjusting the duty cycle between 20% and 80%. Analysis revealed that, at a fixed switching frequency, the average output voltage and average output current are proportional to the duty cycle.

The quench behavior of wires for superconducting fault current limiters at DC faults was simulated, with a focus on the effect of capacitor discharge on the quench. The behavior was also expressed in mathematical forms to facilitate a better understanding of the simulation results and for rough analytical estimations of the wire length suitable for the circuit voltage and capacitance. The quench resistance development behavior for various wire lengths and circuit capacitances was simulated using the model developed in the previous work. The quench behavior was expressed in mathematical forms, reflecting the concept of heat balance. During the quench, the wire temperature increased more slowly for longer wires, but was found to increase in a similar pattern. The wire length estimated by the mathematical formula was close to the one obtained by the simulation, with an error range of a few %. The calculations will be used to estimate effectively the length of wires needed to build superconducting fault current limiters for applications in DC power systems.

Silicon carbide (SiC), with its wide bandgap and strong resistance to radiation and thermal conditions, is a promising material for ultraviolet (UV) photodetector applications under harsh environments. In this study, porous SiC thin films with thicknesses of 20, 50, and 80 nm were fabricated on 4H-SiC substrates using aerosol deposition (AD), which enables roomtemperature film formation. The device with a 50 nm-thick film exhibited the highest photoresponse under UV-C illumination (260 nm), achieving a maximum photo-to-dark current ratio (PDCR) of 205.2, a responsivity of 0.058 A/W, an external quantum efficiency (EQE) of 27.71%, and a specific detectivity (D*) of 7.9×10¹¹ Jones. These results are attributed to an optimized balance between photon absorption and carrier transport in the porous structure. The findings confirm the potential of ADfabricated porous SiC films for highly sensitive and scalable UV photodetector applications.

With the advancement of the information society, the demand for highly integrated and multi-functional electronic devices is rapidly increasing. To meet these demands, high-performance transistors with low power consumption, high-speed operating, and mechanical flexibility are essential. Among various candidates, semiconducting single-walled carbon nanotubes (s-SWCNT)-based transistors, which exhibit intrinsically ambipolar characteristics, have emerged as promising components for CMOS-like circuits. In this study, s-SWCNT were selectively dispersed using rr-P3DDT, a thiophene-based conjugated polymer, and filed-effect transistors (FETs) were fabricated by inducting directional alignment for enhanced charge transport through an off-centered spin-coating process. The electrical characteristics of the fabricated s-SWCNT FETs were evaluated under various thermal annealing conditions (100℃, 150℃, 200℃, and 250℃). Off-centered spin-coated and high temperature annealed s- SWCNT FETs exhibited high field-effect mobilities over 5 cm²/Vs in both p-type and n-type operation, along with ideal Vshaped ambipolar transfer curves. These results indicate a significant enhancement in ambipolar performance due to efficient desorption of residual oxygen and water molecules in active channel via high temperature annealing. Furthermore, CMOS-like inverter circuits demonstrated an ideal inversion voltage (VIN = V_DD/2) and a high voltage gain of approximately 9.5. These findings highlight the potential of SWCNT-based materials for realizing next-generation flexible electronic circuits that combine high-performance, energy efficiency, and simplified solution-processing.

Porous polymeric structures with piezoelectric properties have attracted considerable attention in the fields of biomaterials and tissue engineering due to their ability to convert mechanical stimuli into electrical signals. However, conventional fabrication methods for porous structures often face limitations in controlling pore architecture, maintaining structural uniformity, and achieving process reproducibility, in addition to requiring complex processing conditions. To address these issues, we propose a facile and reproducible fabrication method for porous poly (vinylidene fluoride) (PVDF) piezoelectric sponges using molded sugar cubes as sacrificial pore templates. By adjusting the particle size of the sugar templates, the pore size and distribution of the sponges could be effectively controlled, and a uniform open-pore network was achieved. The fabricated sponges were evaluated with a focus on pore morphology, mechanical behavior, and piezoelectric performance depending on the sugar particle size, and these evaluations confirmed the structural properties and functional efficacy. This study presents a simple and reproducible fabrication strategy along with a quantitative analysis method for porous structures, which is expected to enhance process accessibility and practical applicability in the development of piezoelectric polymer-based biomaterial platforms.

SMD-type 660 nm wavelength semiconductor laser diode device is fabricated using silicon resin molding technology and fabricated a BT resin printed circuit board. BT resin electrode structure printed circuit boards with soldering electrode pads and through holes for heat dissipation were fabricated. The SMD process is an injection molding technique in which the chip is molded from silicon material and then cut by a dicing process to complete the beam emission surface. The fabricated SMD-type semiconductor laser diode exhibits a good near-field beam pattern with no scattering/dispersion caused by the printed circuit board or silicon molding in the emitted laser beam, or reflections around the chip. It was also confirmed that the heat generated at 20 mA operation has good heat dissipation characteristics through the through-hole heat dissipation structure.

Recently, oxide semiconductors have assumed a pivotal role in electronic displays and transparent electronic devices such as amorphous indium gallium zinc oxide (a-IGZO), characterized by high electron mobility and excellent stability. a- IGZO is very suitable for next-generation applications such as flexible displays because it is possible to manufacture highperformance transistors even at low temperatures. However, since the electrical properties tend to deteriorate in hightemperature environments, research aimed at improving thermal stability is needed. In this study, a low-temperature plasma annealing process was introduced to improve the high-temperature stability of the a-IGZO thin film. This process enhances electron mobility by reducing defects in the a-IGZO film and provides stable device performance even under high-temperature conditions. As a result of the experiments of 5 min, 10 min, 15 min, and 20 min, the a-IGZO TFT, which was subjected to plasma annealing at 160℃ for 5 min, showed the best electrical performance, especially in charge mobility and current-voltage characteristics. The technical potential for improving the performance of a-IGZO-based display device was emphasized, and the foundation for applying this power generation to flexible displays and next-generation electronic devices was laid. Future research will focus on determining the optimal annealing conditions by exploring various temperature ranges and plasma parameters to integrate these results into the actual device manufacturing process. These efforts are expected advance significantly to advancing next-generation high-performance display technology.

The solution-based fabrication process for resistive random-access memory (ReRAM) offers several advantages over conventional vapor deposition processes, including simplicity, cost-effectiveness, and high versatility for coating complex structures over large areas. In this study, a TiO₂-based ReRAM device was fabricated using a solution process with Pt top and P⁺⁺-Si bottom electrodes. The synthesized TiO₂ films contain a residual Cl element as revealed by X-ray photoelectron spectroscopy (XPS). Reversible volatile resistance switching was observed due to the formation of conductive Ti-O-Ti networks in the TiO₂ layer. Post-annealing led to an increase in the threshold voltage (Vth). Asymmetric Current-Voltage characteristics was observed due to the different in the work functions of the electrodes. Additionally, the influence of compliance current settings on filament formation and hysteresis behavior was systematically investigated. The results demonstrated that higher compliance currents enhanced the hysteresis width for both positive and negative voltage bias conditions.

The quench behavior of coated conductors (CCs) was simulated with a focus on the initial stage of quenches, and the current limiting behavior of superconducting fault current limiters (SFCLs) at DC faults was calculated. Since the fault current reaches the peak in several ms in DC lines due to capacitor discharge, it is necessary to understand the initial quench behavior well. Considered in the simulation are characteristics of CCs in the flux-flow state, current sharing, non-uniform critical current distribution in CCs, and heat transfer to surroundings. The simulation fit data well. Using the CC model developed in the simulation, the current limiting behavior of SFCLs made of CCs at DC faults was calculated. Critical current distribution and heat transfer were found to affect the current limiting behavior of SFCLs less at DC faults. The calculation will contribute to the effective design of SFCLs for applications in DC lines.

In this study, copper oxide thin films were fabricated by facing target sputtering system and their structural, optical, and electrical properties were investigated. Crystal phase of samples were changed by variation of oxygen flow rate from Cu to Cu₂O and CuO. Compared to Cu metal film, electrical properties of Cu₂O and CuO were relatively degraded, however, asfabricated Cu₂O and CuO indicated still low resistivity (~10^-3 Ω·cm) and high carrier concentration (~10¹⁹ cm^-3). From the results, it is thought that the copper oxide thin films Cu₂O fabricated under optimal conditions can be applied to various optoelectronic devices including ultraviolet photodetector.

Cu₂O metal oxide was synthesized using NaBH₄ as a reducing agent in this study. The transformation of Cu composite with the pH adjustment was investigated, and the conditions for Cu₂O synthesis were analyzed. As pH of the solution was changed, the synthesized Cu composite evolved into Cu/Cu₂O and Cu/Cu₂O/CuO composites. The Cu₂O composite synthesized under conditions closest to pure Cu₂O was heat-treated at 200℃. The remaining minor Cu metal was oxidized, resulting in pure Cu₂O particles with enhanced crystallinity. The synthesized Cu₂O exhibited various morphology with particle sizes of about 160~720 nm, and the shape and size of the Cu₂O particles remained significantly unchanged after heat treatment. Surface analysis was conducted to compare the changes before and after heat treatment. No significant changes were observed, except for those attributed to water evaporation. The Cu₂O synthesized via this simple chemical reduction method can be utilized in various application fields, including catalysts, optical devices, and sensors.

In this study, the electrical properties of zinc oxide (ZnO) thin-film transistors (TFTs) based on oxide semiconductors were analyzed. As interest in next-generation transparent and flexible displays grows, ZnO, which offers high field-effect mobility and transparency, has emerged as a promising material to overcome the limitations of amorphous silicon (a-Si)-based TFTs. ZnO has a wide bandgap and optical transparency and can be deposited on various substrates at low temperatures, making it a suitable channel material for future display devices. In this study, ZnO TFTs were fabricated with an inverted staggered structure using a p⁺⁺ Si wafer coated with SiO₂ as the substrate. The ZnO channel layer was deposited by RF magnetron sputtering, and the ITO source/drain electrodes were formed using an e-beam evaporator. The electrical characteristics was evaluated using Keithley 4200A-SCS parameter analyzer. Mobility, On/Off ratio, and subthreshold swing (SS) were calculated from the measurements.

One method to increase the output of solar modules is the application of the Half-cut technique, which requires a scribing process involving direct irradiation of infrared lasers on the solar cells. During this process, the laser melts the surface of the solar cells at high temperatures, enabling mechanical division, but this can lead to output loss due to thermal degradation caused by the laser. To minimize such losses, a low-temperature and low-loss division method has been devised. In this study, we compared the electrical characteristics and leakage currents affecting output degradation between the newly devised low temperature and low-loss cell division method and the conventional laser division method. Additionally, we conducted a 3-point flexural test to evaluate the mechanical properties of both methods.

We investigated the potential of IO:H thin films and hydrogen doping to improve current density and fill factor for enhancing the performance of silicon heterojunction solar cells. We revealed that a transmittance of 86.7% and work function of 5.4 eV could be achieved by injecting 3 sccm of hydrogen gas. The lattice constant of 1.037 nm at the AB site indicates an anion antibonding tendency, and the work function increases as the Fermi level shifts to the valence band. Based on these findings, we fabricated a silicon heterojunction solar cell and achieved an efficiency of 18.53%, while computer simulation confirmed a conversion efficiency of 24.65%, an open-circuit voltage of 724 mV, and a fill factor of 82.72% at a current density of 41.15 mA/㎠.

Piezoelectricity refers to the phenomenon where mechanical stress is converted into electrical signals or, conversely, electrical signals are converted into mechanical stress. Ferroelectric materials, characterized by high dielectric permittivity and spontaneous polarization, retain their polarization even after the removal of an electric field. In such materials, poling plays a crucial role in enhancing the piezoelectric effect, with the process of aligning dipoles being known as poling. This review focuses on studies that have compared and analyzed the enhancement of piezoelectric properties in ceramics and polymers through two representative poling methods: AC poling (ACP) and DC poling (DCP). Even within the same category of ceramics or polymers, variations in piezoelectric properties are observed based on the material type, poling method, and poling conditions. Under certain conditions, ACP has been shown to provide superior poling effects compared to DCP. Through this review, we propose that ACP has the potential not only to replace the traditionally used DCP in the poling of piezoelectric materials but also to serve as a more effective method. This could spark increased interest in the study of poling methods for piezoelectric polymers, a field that has received relatively less attention.

Precise control over the morphology of nanostructures is critical for tailoring their physical and chemical properties. This study addresses the challenge of developing a simple, integrated method for synthesizing both 1D and 2D colloidal Cu nanostructures in a single system, achieving successful tuning of their localized surface plasmon resonance (LSPR) properties. A facile hydrothermal synthesis utilizing potassium iodide (KI) and hexadecylamine (HDA) is presented for controlling Cu nanostructure morphologies. The key to achieving 1D nanowires (NWs) and 2D nanoplates (NPs) depends on the controlled adsorption of HDA molecules and iodide (I-) ions on specific crystal facets. Depending on the morphologies, the resultant Cu nanostructures exhibit tunable LSPR peaks from 558 nm [nanoplates (NPs)] to 590 nm [nanowires (NWs)]. These results pave the way for the scalable and cost-effective production of plasmonic Cu nanostructures with tunable optical properties, holding promise for applications in sensing, catalysis, and photonic devices.

Due to changes in the form factor of display panels and touch screen panels in various devices, capacitive touch systems have evolved to address various issues such as low power consumption, noise immunity, and small chip size. Furthermore, some devices have applications that use a stylus. Since the stylus operates similarly to a finger touch, it encounters similar issues. Recent research trends focus on addressing key issues such as noise, which is primarily caused by the self-capacitor formed between the display cathode and the touch screen panel. In this paper, Various research papers discussing methods to eliminate external noise will be reviewed. These advancements enhance noise immunity in touch systems, making it easier to use thinner and more flexible panels. These progress make touch technology more versatile and reliable in various applications.

This study proposes an innovative methodology for developing flexible printed circuit boards (FPCBs) capable of conforming to three-dimensional shapes, meeting the increasing demand for electronic circuits in diverse and complex product designs. By integrating a traditional flat plate-based fabrication process with a subsequent three-dimensional thermal deformation technique, we have successfully demonstrated an FPCB that maintains stable electrical characteristics despite significant shape deformations. Using a modified polyimide substrate along with Ag flake-based conductive ink, we identified optimized process variables that enable substrate thermal deformation at lower temperatures (~130℃) and enhance the stretchability of the conductive ink (ε ~30%). The application of this novel FPCB in a prototype 3D-shaped sensor device, incorporating photosensors and temperature sensors, illustrates its potential for creating multifunctional, shape-adaptable electronic devices. The sensor can detect external light sources and measure ambient temperature, demonstrating stable operation even after transitioning from a planar to a three-dimensional configuration. This research lays the foundation for next-generation FPCBs that can be seamlessly integrated into various products, ushering in a new era of electronic device design and functionality.

In this study, we fabricated single grain YBCO bulk superconductors with control of the distance between the seed and the upper surface of the YBCO compacts. The magnetic levitation force of the YBa₂Cu₃O₇ superconducting bulk, which corresponds to the energy amount of the superconducting bulk, was measured to be 32.634 N at the center of the bulk where the seed was placed. Under field cooling conditions, a capture magnetic force of 2.17 kG was observed at the center of the bulk. The trapped magnetic force curve corresponding to the stability of the superconducting bulk means that the superconducting specimens were well grown in the form of single grains.

In this paper, in order to analyze the PMU data of the accident section, we collected the raw data of a total of 35 PMU installed at the Yeonggwang substation and tried to find a way to analyze the data, and analyzed the data using Excel format and formula. As a result, the three-phase voltage and current data of the PMU were calculated using formulas in Excel and interpreted as effective and reactive power, and it was possible to check the effective and reactive power of the accident section through the graph to see why it was different from before the accident. As a result, it was confirmed that each power was greatly reduced in the graph of the effective and reactive power of the accident section, and it was confirmed that the loss occurred as the power of the accident section was greatly reduced.

In this study, we successfully synthesized copper oxide (Cu₂O) particles through a hydrothermal method at a relatively low temperature (150℃). The synthesis involved the precise control of molar concentrations of NaOH. Notably, Cu₂O particles were effectively synthesized when NaOH concentrations of 0.15 M and 0.20 M were utilized. While attempts were made at different molar concentrations, the synthesis of pure Cu₂O particles was only achieved at concentrations of 0.15 M and 0.20 M. In this experimental investigation, Cu₂O synthesized under these specific conditions exhibited absorption characteristics within the wavelength range of 640 to 570 nm, consistently exhibiting a band gap energy of 1.9 eV. These Cu₂O particles, characterized by their small band gap energy and straightforward synthetic method, hold significant promise for various applications including semiconductors and solar cells.

By introducing curing kinetics and chemo-rheology for the epoxy resin formulation for ultra-high voltage gas insulated switchgear (GIS) Insulating Spacers, a study was conducted to simulate the curing behavior, flow and warpage analysis for optimization of the molding process in automatic pressure gelation. The curing rate equation and chemo-rheology equation were set as fixed values for various factors and other physical property values, and the APG molding process conditions were entered into the Moldflow software to perform optimization numerical simulations of the three-phase insulating spacer. Changes in curing shrinkage according to pack pressure were observed under the optimized process conditions. As a result, it was confirmed that the residence time in the solid state was shortened due to the lowest curing reaction when the curing holding pressure was 3 bar, and the occurrence of deformation due to internal residual stress was minimized.

High-density crossbar arrays based on storage class memory (SCM) are ideally suited to handle an exponential increase in data storage and processing as a central hardware unit in the era of AI-based technologies. To achieve this, selector devices are required to be co-integrated with SCM to address the sneak-path current issue that indispensably arises in such crossbar-type architecture. In this perspective, we first summarize the current state of tellurium-based threshold-switching devices and recent advances in the material, processing, and device aspects. We thoroughly review the physicochemical properties of elemental tellurium (Te) and representative binary tellurides, their tailored deposition techniques, and operating mechanisms when implemented in two-terminal threshold switching devices. Lastly, we discuss the promising research direction of Te-based selectors and possible issues that need to be considered in advance.

The fault current limiting characteristics of three-phase transformer type superconducting fault current limiter (SFCL), which consisted of three-phase primary and secondary windings wound on E-I iron core, one high-TC superconducting (HTSC) element connected with the secondary winding of one phase and another HTSC element connected in parallel with other two secondary windings of two phases, were analyzed. Unlike other three-phase transformer type SFCLs with three HTSC elements, three-phase transformer type SFCL using double quench has the merit to perform fault current limiting operation for three-phase ground faults with two HTSC elements. To verify its proper three-phase ground fault current limiting operation, three-phase ground faults such as single-line ground, double-line ground and triple-line ground faults were generated in three-phase simulated power system installed with three-phase transformer type SFCL using double quench. From analysis of its fault current limiting characteristics based on tested results, three-phase transformer type SFCL using double quench was shown to be effectively operated for all three-phase ground faults.

Mechanoluminescence (ML) is a phenomenon where the application of mechanical force to ML materials generates an electric field and produces light, holding significant promise as an eco-friendly technology. However, challenges in commercializing ML technology has arisen due to its low brightness and short luminous lifetime. To address this, in this work, we enhance ML efficiency by mixing carbon nanotubes (CNTs) into a ZnS: Cu embedded in a polydimethylsiloxane composite ML device. The inclusion of CNTs boosts ML intensity by 98% compared to devices without CNTs, as the increasing CNT fraction elevates conductivity, thereby amplifying ML intensity. However, this increase in CNT fraction also leads to enhanced light absorption within the device. Consequently, we observe a trend where ML intensity rises initially but declines beyond a CNT fraction of 0.0015 wt%. Based on these findings, we anticipate that our research will make valuable contributions to the advancement of electrical powerless mechanoluminescent technology.

An algorithm was developed to detect and block serial arc currents using HPF. The AC series arc problem is that the load current is greater than the fault current and no leakage current occurs. As a solution, an arc detection method utilizing differences in high- frequency amplitudes was developed. HPT was applied to the load current and FFT was applied to eliminate low frequencies. An algorithm has been developed to detect arc waveforms when they exceed a certain value compared to the average of normal waveforms. Using one cycle of data, arc detection is faster and arc accidents are prevented.