Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Page Path

11
results for

"ALD"

Keywords

Publication year

Authors

"ALD"

Study of Al Doping Effect on HfO2 Dielectric Thin Film Using PEALD
Min Jung Oh, Ji Na Song, Seul Gi Kang, Bo Joong Kim, Chang-bun Yoon
J Electr Electron Mater 2023;36(2):125-128.   Published online March 1, 2023
DOI: https://doi.org/10.4313/JKEM.2023.36.2.3
Recently, as the process of the MOS device becomes more detailed, and the degree of integration thereof increases, many problems such as leakage current due to an increase in electron tunneling due to the thickness of SiO2 used as a gate oxide have occurred. In order to overcome the limitation of SiO2, many studies have been conducted on HfO2 that has a thermodynamic stability with silicon during processing, has a higher dielectric constant than SiO2, and has an appropriate band gap. In this study, HfO2, which is attracting attention in various fields, was doped with Al and the change in properties according to its concentration was studied. Al-doped HfO2 thin film was deposited using Plasma Enhanced Atomic Layer Deposition (PEALD), and the structural and electrical characteristics of the fabricated MIM device were evaluated. The results of this study are expected to make an essential cornerstone in the future field of next-generation semiconductor device materials.
  • 9 View
  • 0 Download
Improvement on Surface and Electrical Properties of Polymer Insulator Coated TiO2 Thin Film by Atomic Layer Deposition
Nam-hoon Kim, Yong Seob Park
J Electr Electron Mater 2016;29(7):440-444.   Published online July 1, 2016
Titanium oxide (TiO2) thin films were synthesized on polymer insulator and Si substrates by atomic layer deposition (ALD) method. The surface and electrical properties of TiO2 films synthesized at various ALD cycle numbers were investigated. The synthesized TiO2 films exhibited higher contact angle and smooth surface. The contact angle of TiO2 films was increased with the increase of ALD-cycle number. Also, the rms surface roughness of films was slightly rough with the increase of ALD-cycle number. The leakage current on TiO2 film surface synthesized at various conditions were uniformed, and the values were decreased with the increase of ALD-cycle number. In the results, the performance of TiO2 films for self-cleaning critically depended on a number of ALD-cycle.
  • 8 View
  • 0 Download
Nano and Oxide Electronics : Regular Paper ; Regular Paper ; The Properties of Atomic Layer Deposited Al-Doped ZnO Films Using H2O and O3 As Oxidants
Minyi Kim, Youngjoon Cho, Hyusik Chang
J Electr Electron Mater 2015;28(10):652-657.   Published online October 1, 2015
We have investigated the properties of Al-doped ZnO (AZO) thin films as functions of atomic layer deposition (ALD) oxidants. AZO transparent conducting oxides (TCOs) layer was deposited by ALD with adding trimethylaluminum (TMA) and diethylzinc (DEZn). AZO films were deposited at low temperature with H2O and O3 as oxidants. Electrical, optical and structural properties of AZO thin films were investigated by 4-point probe, Hall effect measurement, UV-VIS, and AFM. Microstructure and atomic bonding states were investigated by HRXRD and XPS. The resistivity of AZO films grown using H2O was lower than the films grown using H2O and O3, by approximately two orders of magnitude. The differences in oxygen vacancy peak intensity of AZO films were correlated to the optical and electrical properties.
  • 10 View
  • 0 Download
Intelligent Energy Harvesting Power Management and Advanced Energy Storage System
Kwan Jun Heo, Sung Jin Kim
J Electr Electron Mater 2014;27(7):417-427.   Published online July 1, 2014
Renewable energy sources such as solar, wind and hydro provides utilizing renewable power and reduce the using fossil fuels. On the other hand, it is too critical to apply power system due to the intermittent nature of renewable energy sources, the continuous fluctuations of the power load, and the storage with high energy density. Energy storage system, including pumped-hydroelectric energy storage, compressed-air energy storage, superconducting magnetic energy storage, and electrochemical devices like batteries, super capacitors and others have shown that solve some of the challenges. In this paper, were view the current state of applications of energy storage systems, and atomic layer deposition technology, graphene materials on the energy storage systems and processes.
  • 10 View
  • 0 Download
Study on Electrical Characteristics of Hafnium Silicate Films with Low Temperature O2 Annealing
Jung Chan Lee, Kwang Sook Kim, Seok Won Jeong, Yong Han Roh
J Electr Electron Mater 2011;24(5):370-373.   Published online May 1, 2011
We investigated the effects of low temperature (500℃) O2 annealing on the characteristics of hafnium silicate (HfSi(x)O(y)) films deposited on a Si substrate by atomic layer deposition (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics such as flat band voltage shift (ΔV(fb)) by hysteresis without oxide capacitance reduction. We suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of HfSi(x)O(y) films deposited by ALD.
  • 9 View
  • 0 Download
Electric Properties of Carbon Aerogel for Super Capacitors
Jeong Woo Han, Kyeong Min Lee, Du Hee Lee, Sang Won Lee, Jung Rag Yoon
J Electr Electron Mater 2010;23(8):660-666.   Published online August 1, 2010
Abstract: Carbon aerogels are promising materials as electrodes for electrical double layer capacitors (EDLCs). An optimum process is presented for synthesis of nanoporous carbon aerogels via pyrolyzing resorcinol-formaldehyde (RF) organic aerogels, which could be cost-effectively manufactured from RF wet gels. The major reactions between resorcinol and formaldehyde include an addition reaction to form hydroxymethyl derivatives (-CH(2)OH), and then a condensation reaction of the hydroxymethyl derivatives (-CH(2)-)- and methylene ether (-CH(2)OCH(2)-) bridged compounds. The textural properties of carbon aerogels obtained were characterized by nitrogen adsorption/desorption analysis and SEM and TEM. The application of the resultant carbon for electrodes of electric double layers capacitor (EDLC) in organic TEABF4/ACN electrolyte indicated that the ESR, as low as 55 mΩ, was smaller than for commercially activated carbons. And EDLC with carbon Aerogel electrodes has an excellent stable more than for commercially activated carbons.
  • 11 View
  • 0 Download
Change in Electrical Properties of Al2O3/Gan MIS Structures according to the Thickness of Al2O3 Thin Film and Annealing Temperature
No-Won Kwak, Woo Seok Lee, Ka Lam Kim, Hyun Jun Kim, Kwang Ho Kim
J Electr Electron Mater 2009;22(6):470-475.   Published online June 1, 2009
  • 9 View
  • 0 Download
Fabrication and Electrical Properties of Al2O3/GaN MIS Structures using Remote Plasma Atomic Layer Deposition
Hyeong Seon Yun, Hyun Jun Kim, Woo Seok Lee, No Won Kwak, Ka Lam Kim, Kwang Ho Kim
J Electr Electron Mater 2009;22(4):350-354.   Published online April 1, 2009
  • 8 View
  • 0 Download
Electrical and Material Characteristics of HfO2 Film in HfO2/Hf/Si MOS Structure
Kun Ho Bae, Seung Woo Do, Jae Sung Lee, Yong Hyun Lee
J Electr Electron Mater 2009;22(2):101-106.   Published online February 1, 2009
  • 13 View
  • 0 Download
Fabrication and Properties of Vanadium Oxide Thin Films for Microbolometer by using Plasma Atomic Layer Deposition Method
Hyeong Seon Yun, Soon Won Jung, Sang Hyun Jeong, Kwang Ho Kim, Chang Auck Choi, Byoung Gon Yu
J Electr Electron Mater 2008;21(2):156-161.   Published online February 1, 2008
  • 7 View
  • 0 Download
Characteristics of ZnO Thin Films of FBAR using ALD and RE Magnetron Sputtering
J Electr Electron Mater 2005;18(2):164-168.   Published online February 1, 2005
  • 14 View
  • 0 Download