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원격 플라즈마 원자층 증착법을 이용한 Al2O3/GaN MIS 구조의 제작 및 전기적 특성

윤형선, 김현준, 이우석, 곽노원, 김가람, 김광호

Fabrication and Electrical Properties of Al2O3/GaN MIS Structures using Remote Plasma Atomic Layer Deposition

Hyeong Seon Yun, Hyun Jun Kim, Woo Seok Lee, No Won Kwak, Ka Lam Kim, Kwang Ho Kim
J Electr Electron Mater 2009;22(4):350-354.
Published online: April 1, 2009
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Fabrication and Electrical Properties of Al2O3/GaN MIS Structures using Remote Plasma Atomic Layer Deposition
J Electr Electron Mater. 2009;22(4):350-354.   Published online April 1, 2009
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Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Fabrication and Electrical Properties of Al2O3/GaN MIS Structures using Remote Plasma Atomic Layer Deposition
J Electr Electron Mater. 2009;22(4):350-354.   Published online April 1, 2009
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