Multilayer ceramic batteries (MLCBs) have attracted increasing attention as compact all-solid-state energy-storage devices that can be manufactured using multilayer ceramic processing technologies. In this study, an MLCC-compatible fabrication process for oxide-based MLCBs was developed using Li₁₊ₓAlₓTi₂₋ₓ(PO₄)₃ (LATP) solid electrolytes, Li₃V₂(PO₄)₃ (LVP) cathodes, and Cu current collectors. Commercial LATP powders were evaluated in terms of particle-size distribution, phase purity, thermal stability, and ionic conductivity. The selected LATP powder was subsequently employed for tape-cast green-sheet fabrication, and the effects of polyvinyl butyral (PVB) binder content on slurry rheology and sheet microstructure were investigated. An optimized binder composition containing 11 wt% PVB (BM-2/BH-3 = 3:7) provided improved processability and microstructural uniformity. Drying conditions during sequential electrode printing were also optimized to suppress sheet warpage and improve multilayer registration. Thermogravimetric and differential thermal analyses (TG–DTA) were used to establish an optimized two-step debinding and co-firing process under a controlled reducing atmosphere. The resulting multilayer structures exhibited uniform densification without significant blistering, delamination, or interfacial defects. Charge–discharge measurements confirmed that electrochemical functionality was retained after the complete manufacturing process, yielding a discharge capacity of approximately 2.5–2.7 μAh.

Metal sacrificial-layer-assisted transfer is a promising strategy for transferring thermally annealed thin films onto flexible polymer substrates without exposing the receiver substrate to thermal damage. However, stable release of the annealed thin-film stack remains challenging because high-temperature annealing can alter the etching behavior of the sacrificial metal layer and the protective oxide layer. In this study, we propose a thin-film transfer process using a Ni metal sacrificial layer and etch access holes, in which an SU-8/Ti/SiO₂ transferable stack was fabricated on a rigid sapphire donor substrate, annealed at 400–700°C, selectively released by Ni etching, and transferred onto a flexible PET receiver substrate. As the annealing temperature increased from 400 to 700°C, the SiO₂ etch rate decreased from 6.8–6.96 to 2.61–3.83 nm/s, while the Ni release time increased from 72–77 to 82–95 min; nevertheless, the transferable stack was successfully transferred under all process conditions with image-based transfer yields of 58.81–82.76%, with the highest yield obtained for the 200 nm Ni sacrificial layer annealed at 550°C. These results demonstrate the process feasibility of the proposed metal sacrificial-layer and etch-access-hole-based transfer approach for transferring thermally annealed thin-film structures from rigid donor substrates to flexible receiver substrates.

In this study, we systematically investigated the effects of thermal atomic layer deposition (ALD) conditions on the electrical characteristics of conductive-filament-based volatile threshold switching memristors with a Pt/Al₂O₃/Ag structure. Although volatile threshold switching memristors have attracted significant attention for neuromorphic computing applications such as spiking neural networks, the impact of dielectric deposition conditions on their switching behavior remains relatively unexplored. The number of ALD cycles was varied from 40 to 200, and the deposition temperature was varied from 50 to 250°C to evaluate their effects on threshold voltage (V_th), off-state resistance (R_off), and device yield. Devices fabricated using 75–150 ALD cycles showed clear volatile threshold switching behavior with relatively high device yield, whereas excessively low or high cycle numbers resulted in short-type and open-type failures, respectively. In addition, V_th and R_off tended to increase at higher deposition temperatures, while the device yield significantly degraded above 150°C. These results indicate that the number of ALD cycles and the deposition temperature define a critical process window for achieving volatile threshold switching while suppressing both short-type and open-type failures. This study provides practical guidelines for optimizing dielectric ALD conditions in conductive-filament-based volatile threshold switching memristors for future neuromorphic hardware applications.

GaN nanowire (NW)-based hybrid structures have attracted attention for optoelectronic applications due to their high surface area and efficient carrier transport. However, the optical transparency of GaN NWs is often limited by unintended residual species accumulated on the surface and in the inter-wire regions, as well as defect-related absorption, leading to reduced light transmission. In this work, we demonstrate that thermal annealing significantly improves the optical transparency of GaN NWs grown on indium tin oxide (ITO)/glass substrates. The transmittance increased from 47.9% to 78.5% at 550 nm after rapid thermal annealing at 800^oC for 3 min, while a comparable value (~75.5%) was achieved at 600^oC for 5 min. PbBr₃ was deposited onto the GaN NWs to form hybrid structures, and temperature-dependent photoluminescence (TDPL) measurements revealed enhanced emission stability with suppressed peak shift and reduced spectral broadening. Arrhenius analysis based on a two-channel model revealed that the activation energy of the dominant non-radiative recombination pathway increased from 62 meV in the as-grown sample to 85 meV after thermal annealing, while its relative contribution remained nearly unchanged. In contrast, the shallow trap-assisted pathway exhibited a similar activation energy of approximately 6 meV in both samples, but its contribution decreased from 0.35 to 0.17 after annealing. As a result, the internal quantum efficiency (IQE) improved from 75.9% to 87.4%. These results show that thermal annealing improves optical transparency by removing residuals and suppresses defect-related recombination, leading to enhanced carrier dynamics and improved optical performance of PbBr₃-based hybrid structures.

This review systematically examines the structural characteristics, compositional design strategies, and recent research trends of layered double hydroxides (LDHs), which are recognized as promising electrocatalyst materials in electrochemical nitrate-to-ammonia conversion. Despite the rapid growth in related research, achieving simultaneous high selectivity and efficiency remains a significant technical challenge due to the complex mechanisms of the nitrate reduction reaction (NitRR) and its inherent competition with the hydrogen evolution reaction (HER). In this study, we analyzed the structural contributions of LDH catalysts for maximizing nitrate reduction efficiency and systematically established key catalyst design indicators required to ensure optimal performance. Specifically, we provide a detailed investigation of the physicochemical mechanisms for enhancing NH₃ production by precisely regulating the adsorption energies of reaction intermediates and maximizing charge transfer efficiency through compositional control and defect engineering. Furthermore, we discuss advanced structural design strategies, such as core-shell tandem structures, MOF-derived architectures, and interlayer anion control, as effective methods for enhancing catalytic performance and optimizing mass transport processes. These insights offer a strategic roadmap for designing high-performance LDH catalysts and represent a critical step toward the practical implementation of sustainable green ammonia production systems, particularly for integration into high-efficiency membrane electrode assembly (MEA) technologies.

The rapid proliferation of artificial intelligence (AI) servers and high-performance computing systems has significantly elevated the technical and reliability requirements for multilayer ceramic capacitors (MLCCs). In such systems, MLCCs are critical passive components that must deliver high capacitance, fast transient response, and robust insulation performance under high temperature, voltage, and current density. This review examines the material, structural, and process innovations that underpin MLCC performance in AI applications. Key topics include the development of ultrathin dielectric layers (<0.5 μm), rare-earth doped BaTiO₃-based dielectrics with enhanced DC bias stability, and core-shell microstructures designed for temperature and field resilience. The paper also explores insulation degradation mechanisms―such as vacancydriven conduction and demixing―and advanced reliability assessment methodologies, including HALT, TSDC, and the tipping point framework. Comparisons with automotive-grade MLCCs highlight the unique requirements of AI systems, such as ultraminiaturization, high volumetric efficiency, and ppm-level field failure rates. Finally, the review discusses emerging trends in MLCC technology, including particle engineering, interface stabilization, and advanced lamination techniques, and provides insight into the future direction of capacitor development tailored to AI data center environments.

Citations

• Reliability enhancement in Dy-doped BaTiO3 nanoceramics: from core–shell structure to phase-field modeling
  Shuyan Huang, Xinjie Wang, Mengjian Xiao, Xu Cheng, Xiaohui Wang
  Journal of Materials Science.2026; 61(37): 27665.     CrossRef
• Key factors determining high-temperature operating lifetime of multilayer ceramic capacitors (MLCCs)
  Yuto Tomura, Tzu-han Weng, Yusuke Oba, Tomohiro Kajita, Daiki Ishii
  Japanese Journal of Applied Physics.2026; 65(16): 16SP05.     CrossRef
• Effect of BaZrO3 Addition on the Frequency and Temperature Dependent Dielectric Properties of BaTiO3-Based Ceramics
  Won-Su Lee, Jong Kyu Lee, Moon-Taek Cho, Jung Rag Yoon
  Journal of Electrical and Electronic Materials.2026; 39(5): 478.     CrossRef
• Manufacturing Process Optimization of Oxide-Based Multilayer Ceramic Batteries Using Multilayer Ceramic Processing Technologies
  Won-Su Lee, Jong Kyu Lee, Jung Rag Yoon
  Journal of Electrical and Electronic Materials.2026; 39(5): 519.     CrossRef

The growing demand for thinner, lighter, and more energy-efficient electronic systems has driven the development of acoustic technologies toward compact and flexible sound generation platforms. Despite significant progress, conventional electromagnetic speakers remain limited by bulky structures, energy losses, and poor compatibility with modern ultrathin devices. In this review, recent advancements in piezoelectric acoustic systems are presented, demonstrating a new generation of speakers capable of producing high-fidelity sound from ultra-slim, lightweight, and mechanically compliant designs. Through refined structural configurations and efficient electromechanical coupling, these piezoelectric exciters achieve strong acoustic output, fast response, and wide frequency operation while drastically reducing component thickness. These exciters also show their suitability for seamless integration into flexible displays, wearable devices, and automotive panels, offering enhanced spatial audio practicality and multifunctional operation, including demonstrative output and sensing. This advancement marks a step toward the convergence of acoustic, haptic, and interactive technologies, for the realization of sustainable and immersive humanmachine interfaces in future electronic and automotive systems.

Citations

• Flexible piezoelectric cross-bar array sensors for upper-limb kinesthetic sensing via muscle dynamics
  Junki Lee, Jihun Choi, Hyunseung Kim, Min Gon Son, Dong Yeol Hyeon, Jung Hwan Park, Andris Šutka, Chang Kyu Jeong
  Journal of the Korean Ceramic Society.2026;[Epub]     CrossRef

AlGaN/GaN High Electron Mobility Transistors (HEMTs) are emerging as next-generation semiconductors optimized for high-power and high-frequency applications, with their performance highly dependent on the surface and interface quality of the AlGaN/GaN structure. In particular, the 2-Dimensional Electron Gas (2DEG) formed in the AlGaN layer is susceptible to trapping by surface defects, which degrades electrical characteristics and makes the device vulnerable to degradation. In this study, we propose an approach to enhance device reliability and performance by forming a gallium oxynitride (GaON) interfacial layer through O₂ plasma treatment on the AlGaN surface. This method effectively suppresses interface defects, resulting in improved electrical properties such as reduced interface trap density (Dit), threshold voltage (Vth) shift, increased drain current density (Id), and enhanced transconductance density (gm). Furthermore, this surface treatment demonstrates the potential for process simplification by improving the electrical characteristics of power semiconductor devices without the need for complex deposition steps.

Perovskite light-emitting diodes (PELEDs) are emerging as promising candidates for next-generation displays, thanks to their narrow full width at half maximum and low-cost solution processing capabilities. Blue PeLEDs are essential for achieving a full-color gamut; however, efficiency and stability challenges limit their practical use. A primary bottleneck arises from interfacial issues between the perovskite emissive and charge transport layers. This review summarizes the key interfacial challenges hindering the performance of blue PeLEDs and highlights recent advances in interfacial engineering strategies. By focusing on interfacial engineering between the hole-transport layer and perovskite, this review compares different strategies and outlines future directions for developing high-performance blue light-emitting devices.

Quantum dots (QDs) offer size-dependent tunability across the infrared to ultraviolet range with narrow emission linewidths and high color purity, making them highly attractive for next-generation light-emitting devices. Quantum dot lightemitting diodes (QLEDs) further combine precise spectral control with scalable, low-cost solution processing, positioning them as strong candidates for wearable, stretchable, and AR/VR display technologies. However, conventional single-emission QLEDs suffer from charge imbalance, efficiency roll-off, and limited operational lifetime, necessitating new device architectures. Tandem QLEDs, which vertically stack multiple emissive layers (EMLs) connected by charge generation layers (CGLs), provide a compelling solution by enabling higher luminance, improved charge balance, and longer lifetime at equivalent current density. The CGL serves as the interfacial region mediating charge injection and generation between adjacent EMLs, directly determining device efficiency and stability. This review highlights recent progress in CGL engineering, categorizing representative designs into planar heterojunction, inorganic-based, and dipole-based configurations. Comparative analysis of their formation mechanisms, material systems, and process compatibilities reveals evolving charge-control strategies that extend beyond material selection. These insights establish design principles for next-generation tandem QLEDs with enhanced efficiency, durability, and manufacturability.

Multilayer ceramic capacitors (MLCCs) are essential for high-capacitance, miniaturized, and reliable electronic applications. This study examines the impact of layer stacking on the dielectric and electrical properties of MLCCs using a BaTiO₃-based dielectric with MgO, Mn₃O₄, Yb₂O₃, V₂O₅, and (BaCa)SiO₃ glass additives. MLCCs with 10 um-thick dielectric layers and varying Ni electrode layers (10, 30, 50, and 100 layers) were fabricated. The dielectric constant increases significantly up to 30 layers due to compressive stress and sintering densification but it becomes linear beyond 30 layers. Dissipation factor and ESR decrease with higher stacking due to improved sinterability, while breakdown voltage declines exponentially from defect accumulation and thermal stress. Insulation resistance decreases but stabilizes relative to capacitance. C-V results show stress-induced polarization suppression, which reduces the dielectric constant under high voltage. Optimized stacking and sintering conditions are crucial for MIL-PRF-32535 compliant MLCC designs.

Citations

• [100]-Oriented BaTiO₃ via reaction-mediated texturing with SrTiO₃ templates
  Nu-Ri Ko, Jinsung Chun, Kutak Lee, Chang Kyu Jeong, Wook Jo
  Journal of the Korean Ceramic Society.2026; 63(4): 574.     CrossRef
• Effect of BaZrO3 Addition on the Frequency and Temperature Dependent Dielectric Properties of BaTiO3-Based Ceramics
  Won-Su Lee, Jong Kyu Lee, Moon-Taek Cho, Jung Rag Yoon
  Journal of Electrical and Electronic Materials.2026; 39(5): 478.     CrossRef

The thermal management issue in OLED (organic light emitting diode) devices has a significant impact on the efficiency, reliability, and life time of the device. In particular, in OLED systems with multipolar or double cathode electrodes, it is important to accurately interpret the effect of heat generated by current flow between electrodes on the emitting layer. In this study, the governing equation was established based on the heat conduction equation to mathematically model and analyze this heat distribution, and the heat distribution analysis was performed using the COMSOL program. It was confirmed that the temperature generated in the OLED with the double cathode structure reached a maximum of 343.157 K centered on the emitting layer. The heat distribution generated in the proposed OLED structure with the double cathode electrodes was confirmed to be highly distributed in the center toward the double cathode electrodes, which is believed to be because the arrangement of the double cathode electrodes improves the symmetrical distribution of temperature while reducing power consumption.

This study developed a dielectric composition for high-capacitance MLCCs with C0G and U2J temperature compensation characteristics (Class I) under reducing conditions. The potential application of this composition in highpermittivity class I MLCCs was examined. Using (Ba₀.₂₄Ca₀.₁₆Sr₀.₆)(TiₓZr₁₋ₓ)O₃. XRD analysis showed that secondary phases like Sr₂TiO₄ and TiO₂ formed at higher Ti content, affecting the stoichiometric balance. Adjusting the Ti/Zr molar ratio resulted in a dielectric constant of 41.2 ~ 105, a dielectric loss of 0.082 ~ 0.174%, and insulation resistance above 1.6 × 10¹³ ohms at 25℃. The TCC shifted from C0G to U2J as the Ti/Zr ratio increased, but the composition enabled the design of high-capacitance and high-voltage MLCCs with favorable dielectric and electrical properties.

Citations

• High-throughput ceramics processing method using cellulose nanofiber dispersions for rapid materials exploration
  Sou Yasuhara, Yosuke Sugita, Masaki Tozuka, Takuya Hoshina
  Journal of Materials Chemistry C.2026; 14(31): 14136.     CrossRef
• Thermally stimulated depolarization current study of acceptor-doped zirconate-based perovskites
  Rena Isowaki, Masaya Kawaguchi, Keisuke Kishi, Toshiki Okazaki, Maiko Nagayoshi, Kiyoshi Matsubara, Takao Sada
  Japanese Journal of Applied Physics.2026; 65(15): 151003.     CrossRef

Neuromorphic computing, inspired by the biological mechanisms of neural signal transmission, has emerged as a promising technology for efficient and parallel data processing with minimal power consumption. In this study, we developed floating-gate organic thin-film transistors (OTFTs) with self-assembled monolayer (SAM)-based tunneling layers to mimic the characteristics of artificial synapses. The tunneling layers were formed using mixed phosphonic acid SAMs with varying ratios of octadecylphosphonic acid (ODPA) and 12-pentafluorophenoxydodecylphosphonic acid (PFPA). The influence of these ratios on the memory and neuromorphic characteristics of the devices was systematically evaluated. Our results revealed that the ODPA ratio significantly impacts the hysteresis window, with higher ODPA content yielding improved memory characteristics. Conversely, the PFPA : ODPA ratio of 2:1 exhibited the lowest non-linearity (NL = 0.48), demonstrating the potential for highly accurate weight updates in neuromorphic devices. Additionally, pulse width modulation studies showed that a pulse width of 100 ms optimized the linearity and stability of long-term potentiation (LTP) and depression (LTD) characteristics. The combination of sol-gel processed AlOx as a floating-gate layer and tailored SAM-based tunneling layers allowed for precise control of device performance. These findings highlight the importance of molecular engineering in designing SAM layers to balance memory retention and neuromorphic functionality. This study provides a pathway for advancing organic floating-gate transistors as a core component in next-generation neuromorphic computing systems.

This study examined the crystallinity and potential of BaTiO₃ powder, prepared by hydrothermal synthesis at 60 nm, as a dielectric material for automotive MLCCs under varying heat treatment temperatures. At temperatures above 850℃, the powder exhibited an orthorhombic structure, with crystallinity and particle size increasing as the temperature rose. In the range of 850~900℃, the powder displayed a uniform particle size distribution and minimal agglomeration, with particles ranging between 150~200 nm. Additionally, it was confirmed that the heat treatment temperature significantly impacts the properties of BaTiO₃ powder, which are critical for the dielectric performance required in X7R MLCCs used in automotive applications. Specifically, high-temperature treatment (above 850℃) was essential for enhancing the powder's crystallinity and forming a stable core-shell structure, which is crucial for achieving stable TCC (Temperature Coefficient of Capacitance) characteristics. It was confirmed that increased crystallinity at temperatures above 850℃ facilitated the development of the core-shell structure through interactions with additives, thereby achieving the necessary characteristics required for highly reliable automotive MLCCs.

Citations

• [100]-Oriented BaTiO₃ via reaction-mediated texturing with SrTiO₃ templates
  Nu-Ri Ko, Jinsung Chun, Kutak Lee, Chang Kyu Jeong, Wook Jo
  Journal of the Korean Ceramic Society.2026; 63(4): 574.     CrossRef
• Effect of BaZrO3 Addition on the Frequency and Temperature Dependent Dielectric Properties of BaTiO3-Based Ceramics
  Won-Su Lee, Jong Kyu Lee, Moon-Taek Cho, Jung Rag Yoon
  Journal of Electrical and Electronic Materials.2026; 39(5): 478.     CrossRef
• Enhanced dielectric performance in BaTiO3 ceramics by diffusion-controlled core-shell structuring with 2D Ca2Nb3O10 nanosheets
  Tae Yeong Song, Junwon Lee, Nayeon Kwon, Do-Kyun Kwon
  Journal of the Korean Ceramic Society.2026; 63(5): 1194.     CrossRef

The printed and bifacial organic photovoltaics (OPVs) using a semi-transparent electrode structure to enhance light management were investigated. To optimize energy-band alignment for bifacial device structure, a cathode interlayer of ZnO nanoparticles with a low work function of 3.9 eV combined with a polyethyleneimine (PEI) layer was employed. Photon distribution simulations revealed the influence of structural parameters on device conductivity, light absorption, and surface morphology. The dispensing strength, adjusted via applied voltage during printing, significantly impacted device performance. At 13 V and 17 V, J-V characteristics were consistent; however, at 20 V, line width increased by approximately 100%, resulting in a 50% reduction in PCE. These findings highlight the critical relationship between spraying strength, line width, and efficiency, offering valuable insights for advancing printed OPV technologies.

Hazardous gas leakage incidents rank among the most serious safety accidents, leading to significant loss of life, extensive property damage, and severe environmental pollution. This paper describes an innovative IoT-based Assembly Double Pipe System (IADPS) designed for the prevention, early detection, and automated isolation of toxic gas leaks. The proposed system features a double-layered pipe design, with nitrogen charged between the inner and outer pipes, and gas detectors installed at strategic locations. This configuration is intended to prevent pipe corrosion, suppress ignition caused by escaping gas, and facilitate the early detection of gas leaks, thereby mitigating the risk of safety accidents. Furthermore, the system includes a comprehensive real-time monitoring system for pipe integrity and gas leakage, as well as an automated gas leakage detection and isolation system to quickly respond to any incidents.

In this study, the electrical properties of a C0G (class 1 ceramic) dielectric composition with internal reducibility, specifically (Ba_0.27CaSr)(Zr_0.95Ti_0.05)O₃, were investigated by fixing Ba at the A site and varying the Ca/Sr molar ratio. The potential application of this composition in high-permittivity C0G MLCCs was examined. The powder was calcined at 1,150℃ for 2 hours, as determined by TG-DTA analysis, and the resulting powder was ground to achieve a particle size (D50) of 0.35 to 0.4 μm and a specific surface area (BET) of 4.5 to 5.0 g/m². With a Ca/Sr molar ratio of 0.3, the composition (Ba0.27Ca0.17Sr0.56) (Zr0.95Ti0.05)O₃ exhibited electrical properties with a permittivity of 41.9, a loss of less than 0.008%, and an insulation resistance exceeding 2.2×10¹³ Ω. The feasibility of using this composition for high-capacitance C0G MLCCs was confirmed.

Citations

• Thermally stimulated depolarization current study of acceptor-doped zirconate-based perovskites
  Rena Isowaki, Masaya Kawaguchi, Keisuke Kishi, Toshiki Okazaki, Maiko Nagayoshi, Kiyoshi Matsubara, Takao Sada
  Japanese Journal of Applied Physics.2026; 65(15): 151003.     CrossRef

Oxygen evolution reaction is a critical bottleneck for the development of efficient electrochemical hydrogen production because of its sluggish reaction. Among various catalysts, transition metal-based layered double hydroxide has drawn significant attention due to their excellent catalytic properties and cost-effectiveness. This paper begins with basic crystal structures, and then conventional adsorbate evolution mechanism of layered double hydroxide. Strategies for enhancing catalytic properties based on adsorbate evolution mechanism and lattice oxygen mechanism that could surpass theoretical limit of adsorbate evolution mechanism are discussed. This paper ends with a brief discussion on the challenges and future directions of layered double hydroxide-based oxygen evolution reaction catalysts.

Oxide semiconductor gas sensors are widely used for detecting toxic, explosive, and flammable gases due to their simple structure, cost-effectiveness, and potential integration into compact devices. However, their reliable gas detection is hindered by a longstanding issue known as humidity dependence, wherein the sensor resistance and gas response change significantly in the presence of moisture. This problem has persisted since the inception of oxide semiconductor gas sensors in the 1960s. This paper explores the root causes of humidity dependence in oxide semiconductor gas sensors and presents strategies to address this challenge. Mitigation strategies include functionalizing the gas-sensing material with noble metal/transition metal oxides and rare-earth/rare-earth oxides, as well as implementing a moisture barrier layer to prevent moisture diffusion into the gas-sensing film. Developing oxide semiconductor gas sensors immune to humidity dependence is expected to yield substantial socioeconomic benefits by enabling medical diagnosis, food quality assessment, environmental monitoring, and sensor network establishment.

In this study, KTN heterolayer thin films were fabricated by alternately stacking films of K(Ta_0.70Nb_0.30)O₃ and K(Ta_0.55Nb_0.45)O₃ synthesized using the sol-gel method. The sintering temperature and time were 750℃ and 1 hour, respectively. All specimens exhibited a polycrystalline pseudo-cubic crystal structure, with a lattice constant of approximately 0.398 nm. The average grain size was around 130~150 nm, indicating relatively uniform sizes regardless of the number of coatings. The average thickness of a single-coated film was approximately 70 nm. The phase transition temperature of the KTN heterolayer films was found to be approximately 8~12℃. Moreover, the 6-coated KTN heterolayer film displayed an excellent dielectric constant of about 11,000. As the number of coatings increased, and consequently the film thickness, the remanent polarization increased, while the coercive field decreased. The 6-coated KTN heterolayer film exhibited a remanent polarization and coercive field of 11.4 μC/cm² and 69.3 kV/cm at room temperature, respectively. ΔT showed the highest value at a temperature slightly above the Curie temperature, and for the 6-coated KTN heterolayer film, the ΔT and ΔT/ΔE were approximately 1.93 K and 0.128×10^-6 K·m/V around 40℃, respectively.

The key to determining the lifetime of OLED device is how much brightness can be maintained. It can be said that there are internal and external causes for the degradation of OLED devices. The most important cause of internal degradation is bonding and degradation in the excited state due to the electrochemical instability of organic materials. The structure of OLED modeled in this paper consists of a cathode layer, electron injection layer (EIL), electron transport layer (ETL), light emission layer, hole transport layer (HTL), hole injection layer (HIL), and anode layer on a glass substrate from top to bottom. It was confirmed that the temperature generated in OLED was distributed around the maximum of 343.15 K centered on the emission layer. It can be seen that the heat distribution generated in the presented OLED structure has an asymmetrically high temperature distribution toward the cathode, which is believed to be because the sizes of the cathode and positive electrode are asymmetric. Therefore, when designing OLED, it is believed that designing the structures of the cathode and anode electrodes as symmetrically as possible can ensure uniform heat distribution, maintain uniform luminance of OLED, and extend the lifetime. The thermal distribution of OLED was analyzed using the finite element method according to Comsol 5.2.

Aluminum-induced crystallization (AIC) as a route to reduce the fabrication cost and to obtain polycrystalline Si (p- Si) thin-film of large grain size is a promising alternative of single-crystalline (s-Si) substrate or p-Si thin-film obtained by conventional methods such as solid phase crystallization (SPC) and laser-induced crystallization (LIC). As the AIC process occurs at the interface between a-Si and Al thin-films, there are various process and interface parameters. Also, it directly means that there is a certain parametric window to obtain p-Si of large grain size having uniform crystal orientation. In this article, we investigate the effect of the various process and interface parameters to obtain p-Si of large grain size and uniform crystal orientation from the literature review. We also suggest the potential use of the p-Si as a virtual substrate for the growth of various compound semiconductors in a form of low-dimension as well as thin-film as a way for their monolithic integration on Si.

High-density crossbar arrays based on storage class memory (SCM) are ideally suited to handle an exponential increase in data storage and processing as a central hardware unit in the era of AI-based technologies. To achieve this, selector devices are required to be co-integrated with SCM to address the sneak-path current issue that indispensably arises in such crossbar-type architecture. In this perspective, we first summarize the current state of tellurium-based threshold-switching devices and recent advances in the material, processing, and device aspects. We thoroughly review the physicochemical properties of elemental tellurium (Te) and representative binary tellurides, their tailored deposition techniques, and operating mechanisms when implemented in two-terminal threshold switching devices. Lastly, we discuss the promising research direction of Te-based selectors and possible issues that need to be considered in advance.

Multilayered actuators using Pb(Mg_1/3Nb_2/3)O₃-Pb(In_1/2Nb_1/2)O₃-PbTiO₃ (PMN-PIN-PT) crystals have demonstrated excellent properties, but are costly and lack mechanical strength. Textured PMN-PIN-PT ceramics exhibit robust mechanical strength and comparable properties to their single crystals form. However, the development of multilayered actuators using textured PMN-PIN-PT ceramics has not been achieved until now. This study presents the development of a multilayered actuator using textured 0.37PMN-0.29PIN-0.34PT ceramics with an Ag0.9/Pd0.1 inner electrode, co-fired at 950℃. A random 0.37PMN- 0.29PIN-0.34PT ceramics multilayered actuator was also developed for comparison. The multilayered actuator consisted of 9 ceramic layers (36 μm thickness) with an overall actuator thickness of 0.401 mm. The textured and random 0.37PMN-0.29PIN- 0.34PT ceramics-based multilayered actuators achieved displacements of 0.61 μm (0.15% strain) and 0.23 μm (0.057% strain) at a low applied peak voltage of 100 V. These results suggest that the developed multilayered actuator using high-performance textured 0.37PMN-0.29PIN-0.34PT ceramics has the potential to replace expensive single crystal-based actuators costeffectively.

We have developed inverted green phosphorescent organic light emitting diodes (OLEDs) using 1,1-bis[(di-4- tolylamino)phenyl]cyclohexane (TAPC) and bis(carbazole-9-yl)biphenyl (CBP) hole transport layers. The driving voltage, current efficiency, power efficiency, and emission characteristics of devices were investigated. While the driving voltage for the same current density was about 1~2 V lower in the devices with the TAPC layer, the maximum luminance was higher in the device with the CBP layer. The maximum current efficiency and power efficiency were 3.2 and 2.7 times higher in the device with the CBP layer, respectively. The higher efficiency in the CBP device resulted from the enhanced hole-electron balance although weak parasitic recombination takes place in the CBP hole transport layer.

Recently, as power and electronic devices have increased in frequency and capacity, it has become a major concern to protect electronic circuits and electronic components used in these devices from abnormal voltages such as various surges and pulse noise. To respond to variously rated voltages applied to power electronic devices, the rated voltages of various varistors can be obtained by controlling the size of internal particles of the varistor or controlling the number of layers of the varistor. During bonding, the problem of unbalanced thermal runaway occurring between the electrode and the varistor interface causes degradation of the varistor and shortens its life of the varistor. In this study, to solve the problem of unbalanced heat distribution of stacked varistors to adjust the operating voltage, the contents of the ZnO-based varistor composition were 96 wt% ZnO, 1 mol% Sb₂O₃, 1 mol% Bi₂O₃, 0.5 mol% CoO, 0.5 mol% MnO, and 1 mol% TiO₂. A multi-layered ZnO varistor was modeled by bonding a single varistor with a composition in three layers according to the operating voltage. The thermal distribution of the triple-layered ZnO varistor was analyzed for the thermal runaway phenomenon that occurred during varistor operation using the finite element method according to Comsol 5.2.

As a potential alternative to flash memory, HfO₂/Al₂O₃ stacks appear to be a viable option as charge capture layers in charge trapping memories. The paper undertakes a review of HfO₂/Al₂O₃ stacks as charge trapping layers, with a focus on comparing the number, thickness, and post-deposition heat treatment and γ-ray and white x-ray treatment of such stacks. Compared to a single HfO₂ layer, the memory window of the 5-layered stack increased by 152.4% after O₂ annealing at ±12 V. The memory window enlarged with the increase in number of layers in the stack and the increase in the Al/Hf content in the stack. Furthermore, our comparison of the treatment of HfO₂/Al₂O₃ stacks with varying annealing temperatures revealed that an increased annealing temperature resulted in a wider storage window. The samples treated with O₂ and subjected to various γ radiation intensities displayed superior resistance. and the memory window increased to 12.6 V at ±16 V for 100 kGy radiation intensity compared to the untreated samples. It has also been established that increasing doses of white x-rays induced a greater number of deep defects. The optimization of stacking layers along with post-deposition treatment condition can play significant role in extending the memory window.

The ferroelectricity in Hf_0.5Zr_0.5O₂ (HZO) thin films is one of the most interesting topics for next-generation nonvolatile memory applications. It is known that a crystallization process is required at a temperature of 400℃ or higher to form an orthorhombic phase that results in the ferroelectric properties of the HZO film. However, to realize the integration of ferroelectric HZO films in the back-end-of-line, it is necessary to reduce the annealing temperature below 400℃. This study aims to comprehensively analyze the ferroelectric properties according to the annealing temperature (350-500℃) and time (1-5 h) using a furnace as a crystallization method for HZO films. As a result, the ferroelectric behaviors of the HZO films were achieved at a temperature of 400℃ or higher regardless of the annealing time. At the annealing temperature of 350℃, the ferroelectric properties appeared only when the annealing time was sufficiently increased (4 h or more). Based on these results, it was experimentally confirmed that the optimization of the annealing temperature and time is very important for the ferroelectric phase crystallization of HZO films and the improvement of their ferroelectric properties.

Passivation quality is mainly governed by epitaxial growth of crystalline silicon wafer surface. Void-rich intrinsic a- Si:H interfacial layer could offer higher resistivity of the c-Si surface and hence a better device efficiency as well. To reduce the resistivity of the contact area, a modification of void-rich intrinsic layer of a-Si:H towards more ordered state with a higher density is adopted by adapting its thickness and reducing its series resistance significantly, but it slightly decreases passivation quality. Higher resistance is not dominated by asymmetric effects like different band offsets for electrons or holes. In this study, multilayer of intrinsic a-Si:H layers were used. The first one with a void-rich was a-Si:H(I₁) and the next one a-SiO_x:H(I₂) were used, where a-SiO_x:H(I₂) had relatively larger band gap of ~2.07 eV than that of a-Si:H (I₁). Using a-SiO_x:H as I₂ layer was expected to increase transparency, which could lead to an easy carrier transport. Also, higher implied voltage than the conventional structure was expected. This means that the a-SiO_x:H could be a promising material for a high-quality passivation of c-Si. In addition, the i-a-SiO_x:H microstructure can help the carrier transportation through tunneling and thermal emission.