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Humidity Dependence Removal Technology in Oxide Semiconductor Gas Sensors

Jiho Park, Ji-wook Yoon
J Electr Electron Mater 2024;37(4):348-358.
Published online: July 1, 2024
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Oxide semiconductor gas sensors are widely used for detecting toxic, explosive, and flammable gases due to their simple structure, cost-effectiveness, and potential integration into compact devices. However, their reliable gas detection is hindered by a longstanding issue known as humidity dependence, wherein the sensor resistance and gas response change significantly in the presence of moisture. This problem has persisted since the inception of oxide semiconductor gas sensors in the 1960s. This paper explores the root causes of humidity dependence in oxide semiconductor gas sensors and presents strategies to address this challenge. Mitigation strategies include functionalizing the gas-sensing material with noble metal/transition metal oxides and rare-earth/rare-earth oxides, as well as implementing a moisture barrier layer to prevent moisture diffusion into the gas-sensing film. Developing oxide semiconductor gas sensors immune to humidity dependence is expected to yield substantial socioeconomic benefits by enabling medical diagnosis, food quality assessment, environmental monitoring, and sensor network establishment.

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Humidity Dependence Removal Technology in Oxide Semiconductor Gas Sensors
J Electr Electron Mater. 2024;37(4):348-358.   Published online July 1, 2024
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
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Humidity Dependence Removal Technology in Oxide Semiconductor Gas Sensors
J Electr Electron Mater. 2024;37(4):348-358.   Published online July 1, 2024
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