The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. When fabricated Ni/Cu plating metallization cell with a selective emitter structure, it has been shown that efficiencies of up to 18% have been achieved using this technology.

This paper describes the fabrication and characteristics of a Au/Ni/Ti/3C-SiC Schottky diode with field plate (FP) edge termination. The Schottky contacts were annealed for 30 min at temperatures ranging from 0 to 800℃. At annealing temperature of 600℃, it showed an inhomogeneous Schottky barrier and had the best electrical characteristics. However, the annealing of 800℃ replaced it with ohmic behaviors because of the formation of many different types of nickel silicides. The fabricated Schottky diode had a breakdown voltage of 200 V, Schottky barrier height of 1.19 eV and worked normally even at 200℃.