Aggressive device scaling has severely degraded the switching characteristics of CMOS transistors. This issue has led to the development of tunneling FETs (TFETs) as an alternative. TFETs, with their asymmetric doping of the source and drain regions, offer improved subthreshold swing (SS) compared to conventional MOSFETs. However, despite this advantage, TFETs still suffer from ambipolar current, which increases off-state current (IOFF). This paper introduces an approach to applying hetero gate dielectrics (HGDs) in nanosheet (NS) TFETs to reduce ambipolar current characteristics. The magnitude of the drain electric field is reduced by selectively forming a high-k dielectric near the source region This configuration allows the TFETs to avoid unintended band-to-band tunneling (BTBT) and suppress ambipolar current during the off-state.

As the operating environment in semiconductor processes becomes demanding, research is being conducted to manufacture dense alumina substrates without defects after sintering to ensure high durability of electrostatic chucks, which are critical components in semiconductor equipment. Therefore, in this study, in order to manufacture green sheets with a high filling ratio for implementing a high-density substrate, alumina powders with average particle sizes of 2.07 μm (L) and 0.37 μm (S) were mixed in ratios of 9:1, 8:2, 7:3, and 6:4, respectively, and green sheets were manufactured and the filling ratio and sintering behavior were observed. Green sheets were fabricated by preparing a slurry using organic materials in Al₂O₃ powders of different particle sizes. The packing density of the green sheet mixed with L and S alumina powders with different average particle sizes in a ratio of 7:3 before and after binder burn-out showed the highest values of 3.19 g/cm³ and 2.87 g/cm³, respectively. As a result of observing the sintered density based on the mixing ratio of alumina powders revealed that the alumina sheet mixed at a 6:4 ratio of L and S powders, sintered at 1,700℃, exhibited the best sintering characteristics with a density of 3.96 g/cm³.

Reliability of CMOS has been severed under aggressive device scaling. Conventional technologies such as lightly doped drain (LDD) and forming gas annealing (FGA) have been applied for better device reliability, but further advances are modest. Alternatively, electro-thermal annealing (ETA) which utilizes Joule heat produced by electrodes in a MOSFET, has been newly introduced for gate dielectric curing. However, concerns about mechanical stability during the electro-thermal annealing, have not been discussed, yet. In this context, this paper demonstrates the mechanical stability of nanosheet FET during the electro-thermal annealing. The effect of mechanical stresses during the electro-thermal annealing was investigated with respect to device design parameters.

Two-dimensional materials have shown a great promise for the next-generation electronic materials due to their unique optical, physical, and chemical properties that are distinct from their bulk counterparts. Their atomic-level thickness, the feature for flexible tenability, and exposed huge surface allow various approaches for high-performance nanoscale devices. Especially, this review highlights the recent progress on two-dimensional dielectric nanosheets, which are obtained by cheap and mass-producible solution-based exfoliation process, accompanied by the preparation methods, various deposition methods, and the characteristics of devices using a dielectric nanosheet thin films. We also present a perspective on the advantages offered by this two-dimensional dielectric nanosheets for the upcoming future nanoelectonics.

In this study, solder joints mixed with graphene-nanosheets (GNSs) were investigated for the manufacture of highly reliable electronic devices. In order to analyze the effect of adding GNSs, experiments were performed by adding various amounts of GNSs (0.01, 0.05, 0.1, 0.3, 0.5 wt%). To compare and analyze the properties of the solder joints to which GNSs were added, shear forces were measured, and cross-sectional observation was performed. The bonding strength of the solder joints containing 0.05% GNSs was the highest, and the bonding strength of the solder joints with higher GNSs contents did not increase. This is because, as the content of GNSs increases, the viscosity of the solder paste also increases; therefore, the solder paste detachability from the metal mask was lowered and a sufficient amount was not applied. In addition, due to the high content of GNSs, the fluidity of solder powder and paste decreased, resulting in defects in the shape of the solder joint. Therefore, the optimal GNSs content in this study was 0.05%, and studies for optimal viscosity should be continued.

An increase in the temperature of photovoltaic (PV) modules causes reduced power output and shorter lifetime. Because of these characteristics, demands for the heat dissipation of PV modules are increasing. In this study, we attached a heat dissipation sheet to the back sheet of a shingled PV module and observed the temperature changes. The PV shingled module was tested under Standard Test Conditions (STCs; irradiance: 1,000 W/m², temperature: 25℃, air mass: 1.5) using a solar radiation tester, wherein the temperature of the PV module was measured by irradiating light for a certain duration. As a result, the temperature of the PV module with the heat dissipation sheet decreased by 3℃ compared to that without a heat dissipation sheet. This indicated that the power loss was caused by a temperature increase of the PV module. In addition, it was confirmed that the primary parameter contributing to the reduced PV module output power was the open circuit voltage (Voc).

There is a need for the development of transparent conductive materials that are economical and environmentally friendly with exhibit low resistivity and high transmittance in the visible spectrum. In this study, the deposition rate and uniformity of Al-doped ZnO-thin films were improved by changing the Z-motion of the sputtering system. The deposition rate and the uniformity were determined to be 3.44 nm/min and 1.23%, respectively, under the 10 mm Z-motion condition. During O2 plasma treatment, the intrusion-type metal elements in the thin film were reduced, which contributed to an oxygen vacancy reduction in addition to structural stabilization. Moreover, the sheet resistance was more easily saturated.

The amount of electric power for photovoltaic power generation depends on the location of the power plant and the direction of solar cell. The solar cell controls the generation of solar power plants. Therefore, the structure of solar cell, manufacturing method, and optic technology were factors contributing to increased solar cell efficiency; however, the technical limit has been reached. Herein, we propose a new method to increase the solar cell efficiency using a wavelength conversion technology that converts ultraviolet and infrared rays, which are not effectively used in solar cells, into effective wavelength of solar cell. We used fluoride Na(Ca)YF₄ phosphor for wavelength conversion. Then, a wavelength-conversion fluorescent paste, prepared using an organic-silicon binder, was used to prepare a film that was applied to Si solar cells. It was confirmed that conversion efficiency improved by 5% or more.

SnO₂/Ag/Nb₂O₅/SiO₂/SnO₂ multilayer films were prepared on glass substrate by sequential using RF/DC magnetron sputtering at room temperature. The influence of top SnO₂ layer thickness on optical and electrical properties of the multilayer films was investigated. Experimentally measured results exhibit transmittances over 84.3 ~ 85.8% at 550 nm wavelength. As the top SnO₂ layer thickness increased from 40 to 55 nm, the sheet resistance (Rs) increased from 5.81 to 6.94 Ω/sq. The Haacke`s figure of merit (FOM) calculated for the samples with various SnO₂ layer thicknesses was a maximum at 45 nm (35.3 × 10^-3 Ω^-1).

Hole explosion behaviors were observed during drilling fine holes with laser beam on the LTCC green bar of 320 ㎛ thick after lamination of green sheets prepared by tape casting of thick film process. The incidence of these hole explosions was inversely proportional to hole sizes. The incidence of hole explosion was 20 % number of hole with the size of 60 ㎛ exploded for the UV radiation, while the explosion did not appear for hole sizes over 100 ㎛. To prevent hole explosion behavior during laser-drilling of fine holes, carbon black powder was added as an additive in the LTCC composition, which has superior thermal durability. As a consequence, hole explosion rate was suppressed to 0.8 % for the hole size of 50 ㎛ green sheet with the carbon black amount of 10 weight % and the laser power of 3 watt. Added carbon is thought to reduce the heat-affected region during laser drilling.

It is necessary for ferrite sheets to be fabricated with high packing density for excellent electrical properties and high strength. In this study, the relationship between the warpage and the packing density of ferrite green sheet, was investigated with amount variation of organic additives. With 0.4 wt% of dispersant, the packing density was about 48% and warpage appeared 0.5~1.3 ㎜ high. With 1.4 wt% of dispersant, the packing density increased up to 57% and warpage appeared 0.8~2.1 ㎜ high. With high packing density, warpage appeared along the edges of specimen, while with low packing density, deformation appeared over whole specimen inhomogeneously. It is thought that inhomogeneous deformation after sintering came from the inhomogeneity in green sheet prepared with badly dispersed slurry. With good homogeneity in green sheet from well-dispersed slurry, isotropic shrinkage is thought to have occurred along the distance from center to edges of specimen during sintering.

In this study, a transparent conductive oxide (TCO)-less dye-sensitized solar cells (DSSCs)was fabricated by using titanium (Ti) electrode to replace the Fluorine-doped tin oxide (FTO) for thereduction of manufacturing cost. Ti film was formed by electron beam evaporation method and the resultsshowed the sheet resistance of Ti electrodes with a thikness of 500 nm similar to FTO. In case of powerconversion efficiency (PCE), a DSSC with Ti electrodes showed a lower value than that with FTO by0.38%. For the investigation of the difference, the DSSCs were measured and analyzed by usingelectrochemical impedance analyzer (EIS).

3 mol% Co-added Ni(OH)2 fine powders, which showed β-phase, as positive electrode materials have been fabricated using NiSO4；6H2O aqueous solution by ultrasonic spray-chemical precipitation and subsequent hydrothermal method, and sheet-like Ni nanopowder was fabricated by mechano-chemical reduction method. The addition effects of the sheet-like Ni nanopowder on the electrochemical properties of the positive electrode in Ni-Zn Redox flow battery were investigated. Impedance spectroscopy revealed that the addition of the sheet-like Ni nanopowder resulted in decrease in the electrical resistivity; 10 wt.% addition reduced the electrical properties by a fifth. Cyclic voltammetry showed the addition of the sheet-like Ni nanopowder resulted in decrease in the potential difference of oxidation and reduction; this means the increase in the reversability for electrode reduction. Charge/discharge measurement confirmed that the addition of the sheet-like Ni nanopowder resulted in the increase in the discharge efficiency.

Abstract: To study the encapsulation method for heat dissipation of high brightness organic light emitting diode (OLEI)), red emitting OLED of ITO (150 nm) / 2 TNATA (50 rim) / NPB (30 rim) / A1q3 1 vol.% Rubrene (30 nm) / Alq3 (30 nm) / LiF (0.7 nm) / Al (200 nm) structure was fabricated, which on Alq3 (150 nm) / LiF (ISo nm) as buffer layer and Al as protective layer was deposited to protect the damage of OLED, and subsequently it was encapsulated using attaching film and metal sheet. The current density, luminance and power efficiency was improved according to thickness of Al protective layer. The emission spectrum and the Commission International de L`Eclairage (CIE) coordinate did not have any effects on encapsulation process using attaching film and metal sheet The lifetime of encapsulated OLED using attaching film and metal sheet was 307 hours in 1,200 nm Al thickness, which was increased according to thickness of Al protective layer, and was improved 7% compared with 287 hours, lifetime of encapsulated OLEI) using attaching film and flat glass. As a result, it showed the improved current density, luminance, power efficiency and the long lifetime, because the encapsulation method using attaching film and metal sheet could radiate the heat on OLED effectively.

The properties of LTCC green sheets formed by the MLS-22 powder of NEG Inc. were investigated for acrylic binders with different PVB and Tg in the variation of temperature. The elongation of the green sheets showed large variation depending on the temperature, and was rapidly decreased near the Tg of the sheets. With the increase of the ratio of plasticizer/binder (P/B), large elongation of the sheets was observed due to the decrease of the Tg. In the stacking process of the multilayer ceramic, the optimal control of the temperature is highly required depending on the Tg of the binder and the ratio of P/Buniform coating.

The properties of green sheet were investigated in order to understanding an effects of organic solvent mixture ratio for solid oxide fuel cells fabrication, The purpose of this work is to optimize the slurry condition using the design of experiment to improve green sheet properties. The elongation increased with increasing amount of binder and solvent. With increasing amount of solvent, the air permeability increased but the tensile strength decreased. The best properties of the green sheet appeared amount of the binder 17 wt%, solvent 35 wt% and powder 48 wt%. The optimum condition of green and sintered density for solid oxide fuel cells fabrication was obtained in the sample pressured at 800kgf/㎠.

In this paper, CuInSe2 thin film was prepared by use of the co-evaporation method with the variation of the substrate temperature in the range of 100℃ to 400℃. The film was annealed at 300℃ for an hour in a vacuum chamber at 3×10-4 Pa. After annealing, the thin film prepared at the substrate temperatures of 100℃ and 200℃ was observed. The XRD (x-ray diffraction) pattern of sample prepared at 100℃ showed the single phase formation of CuInSe2. However, at 200℃, there was no apparent difference in the XRD pattern except a variation in the intensity of the peak. As the annealing treatment of substrate improved the crystal structure of the film, it affected to the increase of an electron mobility, resulted in an increase in conductivity and a decrease in resistance. As a results, when the substrate temperature was at 200℃ and 300℃, the sheet resistance was 1.534 n/and 1.554 n/, respectively, and the resistivity was 1.76×10-6 n·㎝ and 1.7210-6 n·㎝, respectively. From the absorption spectrum measurements, there was no variation between the before and after annealing conductions. And it means that the annealing step does not affect the thickness of the thin film.

Citations

• Effect of Tm2O3addition on dielectric property of barium titanate ceramics for MLCCs
  Jin-Seong Kim, Hee-Soo Lee, Do-Won Kang, Jeong-Wook Kim
  Journal of the Korean Crystal Growth and Crystal Technology.2010; 20(1): 25.     CrossRef