Journal of Electrical and Electronic Materials

Effect of Pad Thickness on Removal Rate and Within Wafer Non-Uniformity in Oxide CMP: Jae Hyun Bae, Hyun Seop Lee, Jae Hong Park, Hideaki Nishizawa, Masaharu Kinoshita, Hae Do Jeong; J Korean Inst Electr Electron Mater Eng 2010;23(5):358-363. Published online May 1, 2010; DOI: https://doi.org/10.4313/JKEM.2010.23.5.358

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Effects of CMP Retaining Ring Material on the Performance of Wafer Polishing
Ki-Won Park, Eun-young Kim, Dong-Sam Park
Journal of the Korean Society of Manufacturing Process Engineers.2020; 19(3): 22. CrossRef
Effects of Insert Materials of Retaining Ring on Polishing Finish in Oxide CMP
Ki-Won Park, Dong-Sam Park
Journal of the Korean Society of Manufacturing Process Engineers.2019; 18(8): 44. CrossRef
Finite Element Analysis on Dynamic Viscoelasticity of CMP Polishing Pad
Byeongjun Pak, Dasol Lee, Seonho Jeong, Hyunjin Kim, Haedo Jeong
Journal of the Korean Society for Precision Engineering.2019; 36(2): 177. CrossRef

Effect of Temperature on Polishing Properties in Oxide CMP: Young Jin Kim, Boum Young Park, Hyoung Jae Kim, Hae Do Jeong; J Korean Inst Electr Electron Mater Eng 2008;21(2):93-98. Published online February 1, 2008; DOI: https://doi.org/10.4313/JKEM.2008.21.2.093

A Study on Oxidizer Effects in Tungsten CMP: J Korean Inst Electr Electron Mater Eng 2005;18(9):787-792. Published online September 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.9.787

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Effect of Oxidizer on the Polishing in Cadmium Telluride CMP
Byeong Cheol Shin, Chang Suk Lee, Hae Do Jeong
Journal of the Korean Society for Precision Engineering.2015; 32(1): 69. CrossRef

Electrochemical Polarization Characteristics and Effect of the CMP Performances of Tungsten and Titanium Film by H2O2 Oxidizer: J Korean Inst Electr Electron Mater Eng 2005;18(6):515-520. Published online June 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.6.515

A Study on DOE Method to Optimize the Process Parameters for Cu CMP: J Korean Inst Electr Electron Mater Eng 2005;18(1):24-29. Published online January 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.1.024

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Statistical Analysis on Process Variables in Linear Roll-CMP
Han Wang, Hyunseop Lee, Haedo Jeong
Journal of the Korean Society of Tribologists and Lubrication Engineers.2014; 30(3): 139. CrossRef

Planarization Characteristics of CMP for WO3 Film with an Addition of Oxidizers: J Korean Inst Electr Electron Mater Eng 2005;18(1):12-16. Published online January 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.1.012

A Study on CMP Properties of SnO2 Thin Film for Application of Gas Sensor: J Korean Inst Electr Electron Mater Eng 2004;17(12):1296-1300. Published online December 1, 2004; DOI: https://doi.org/10.4313/JKEM.2004.17.12.1296

Role of Oxidants for Metal CMP Applications: Yong Jin Seo, Sang Yong Kim, U Seon Lee; J Korean Inst Electr Electron Mater Eng 2004;17(4):378-383. Published online April 1, 2004; DOI: https://doi.org/10.4313/JKEM.2004.17.4.378

Effects of Oxidizer Additive on the Performance of Copper-Chemical Mechanical Polishing using Tungsten Slurry: U Seon Lee, Gwon U Choe, Yeong Sig Lee, Yeon Og Choe, Yong Taeg O, Yong Jin Seo; J Korean Inst Electr Electron Mater Eng 2004;17(2):156-161. Published online February 1, 2004; DOI: https://doi.org/10.4313/JKEM.2004.17.2.156

Aging Effects of Silica Slurry and Oxide CMP Characteristics: U Seon Lee, Pil Ju Go, Yeong Sig Lee, Yong Jin Seo, Gwang Jun Hong; J Korean Inst Electr Electron Mater Eng 2004;17(2):138-143. Published online February 1, 2004; DOI: https://doi.org/10.4313/JKEM.2004.17.2.138