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"Polarization"

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"Polarization"

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Regular Paper

Structural Analysis of Electric Field-Induced Polarization and Strain in Ferroelectric BaTiO3
Jae Hwan Park
J Electr Electron Mater 2026;39(4):374-381.   Published online July 1, 2026
DOI: https://doi.org/10.4313/JEEM.2026.39.4.6
The dielectric and piezoelectric properties of the ferroelectric BaTiO3 were measured and analyzed using both strong and weak electric field conditions. To measure the electric field induced polarizations and strains, a high voltage source and the measuring circuit were used and the dielectric constants were measured with an impedance analyzer. The spontaneous polarization of BaTiO3 at room temperature was calculated as 17 μC/cm2 based on the lattice structure and internal ion location, which is in good agreement with the experimental results. The polarization and strain hysteresis curve according to the electric field were analyzed in terms of lattice structure and ion position. The magnitude of remanent polarization is proportional to the offset distance of Ti4+ ion from the lattice center. The magnitude of dielectric permittivity is proportional to the degree to which Ti4+ ion can move freely inside the lattice. The magnitude of piezoelectric constant d33 is proportional to how much Ti4+ ion distorts the lattice as it moves inside the lattice.
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The changes in threshold voltage and DIBL were investigated for changes in remanent polarization Pr and coercive field Ec, which determine the characteristics of the P-E hysteresis curve of ferroelectric in NCFET (negative capacitance FET). The threshold voltage and DIBL (drain-induced barrier lowering) were observed for a junctionless double gate MOSFET using a gate oxide structure of MFMIS (metal-ferroelectric-metal-insulator-semiconductor). To obtain the threshold voltage, seriestype potential distribution and second derivative method were used. As a result, it can be seen that the threshold voltage increases when Pr decreases and Ec increases, and the threshold voltage is also maintained constant when the Pr/Ec is constant. However, as the drain voltage increases, the threshold voltage changes significantly according to Pr/Ec, so the DIBL greatly changes for Pr/Ec. In other words, when Pr/Ec=15 pF/cm, DIBL showed a negative value regardless of the channel length under the conditions of ferroelectric thickness of 10 nm and SiO2 thickness of 1 nm. The DIBL value was in the negative or positive range for the channel length when the Pr/Ec is 25 pF/cm or more under the same conditions, so the condition of DIBL=0 could be obtained. As such, the optimal condition to reduce short channel effects can be obtained since the threshold voltage and DIBL can be adjusted according to the device dimension of NCFET and the Pr and Ec of ferroelectric.
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Effect of Cathode Materials (MS2, M=Fe, Ni, Co) on Electrochemical Properties of Thermal Batteries
Jungmin Lee, Chae-nam Im, Hyun-ki Yoon, Hae-won Cheong
J Electr Electron Mater 2017;30(9):583-588.   Published online September 1, 2017
Thermal batteries are used in military power sources that require robustness and long storage life for applications in missiles and torpedoes. FeS2 powder is currently used as a cathode material because of its high specific energy density, environmental non-toxicity, and low cost. MS2 (M = Fe, Ni, Co) cathodes have been explored as novel candidates for thermal batteries in many studies; however, the discharge characteristics (1, 2, 3 plateau) of single cells in thermal batteries with different cathodes have not been elucidated in detail. In this study, we independently analyzed the discharge voltage and calculated the total polarizations of single cells using MS2 cathodes. Based on the results of this study, we propose NiS2 as a potential cathode material for use in thermal batteries.
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Structural and Ferroelectric Properties of PZT Thin Films Deposited on SrRuO₃ Electrode Films
Myung Bok Lee
J Electr Electron Mater 2016;29(10):620-624.   Published online October 1, 2016
Ferroelectric Pb(Zr0.52Ti0.48)O₃ (PZT) films were deposited on SrTiO₃(100) substrate by using conductive SrRuO₃ films as underlayer and their structural and ferroelectric properties were investigated. PZT films were grown in (00l) orientation on well lattice-matched pseudo-cubic SrRuO₃ films. Thickness dependence of ferroelectric and electrical properties of PZT films was investigated. PZT film with 400 nm thickness showed a remanent polarization (Pr) of 29.0 μC/cm² and coercive field (Ec) of 83 kV/cm, and Pr decreased and Ec increased with thickness reduction. The dielectric constant for PZT films showed gradual decrease with thickness reduction. Breakdown field of PZT films did not show the thickness dependence and displayed as high value as 1 MV/cm.
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The Electrochemical Property of the Single-Chamber Solid Oxide Fuel Cell Based on a Zirconia Electrolyte
Hee Jung Park, Jong Hoon Joo, Jae Kyo Yang, Yun Ho Jin, Kyu Hyoung Lee
J Electr Electron Mater 2016;29(8):510-515.   Published online August 1, 2016
Single-chamber solid oxide fuel cells (SC-SOFCs) consist of only one gas chamber, in which both the anode and the cathode are exposed to the same fuel-oxidant mixture. Thus, this configuration shows good thermal and mechanical resistance and allows rapid start-up and -down. In this study, the unit cell consisting of La0.8Sr0.2MnO3 (cathode) / Zr0.84Y0.16O2-x (electrolyte) / Ni-Zr0.84Y 0.16O2-x (anode) was fabricated and its electrochemical property was investigated as a function of temperature and the volume ratio of fuel and oxidant for SC-SOFCs. Impedance spectra were also investigated in order to figure out the electrical characteristics of the cell. As a result, the cell performance was governed by the polarization resistances of the electrodes. The cell exhibited an acceptable cell-performance of 86 mW/cm2 at 800℃ and stable performance for 3 hs under 0.7 V.
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Electrocaloric Effect and Hystersis Properties of Pb-free Ferroelectric (Ba0.85Ca0.15)(Ti0.92Zr0.08)O3 Ceramics
You Seok Kim, Ju Hyun Yoo, Yeong Ho Jeong, Jie Young Lee
J Electr Electron Mater 2013;26(11):801-805.   Published online November 1, 2013
In this study, electrocaloric effects of Pb-free (Ba0.85Ca0.15)(Ti0.92Zr0.08)O3 ferroelectric ceramics were investigated and discussed using the characteristics of P-E hysteresis loops at wide temperature range from room temperature to 140℃. The remnant polarization Pr and coercive field Ec were decreased with increasing temperature. The temperature change ΔT by the electrcaloric effect was calculated by Maxwell`s relations, and reached the maximum of ∼0.15 at 120℃ under applied electric field of 30 kV/㎝.
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Comparative Analysis on Insulation Performance of Traction Motors for Hybrid Vehicles
Su Yeon Choi, Chan Yong Park, Sung Wook Kim, Dae Won Park, Gyung Suk Kil, Kang Won Lee
J Electr Electron Mater 2008;21(12):1124-1129.   Published online December 1, 2008
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Microstructure and Ferroelectric Properties of Low Temperature Sintering PMN-PNN-PZT Ceramics with Sintering Temperature
J Electr Electron Mater 2006;19(12):1118-1122.   Published online December 1, 2006
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Growth and Characterization of ZnO Thin Films on R-plane Sapphire Substrates by Plasma Assisted Molecular Beam Epitaxy
J Electr Electron Mater 2006;19(10):923-929.   Published online October 1, 2006
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Dielectric Properties depending on Bias Voltage in Organic Light-emitting Diodes
J Electr Electron Mater 2005;18(11):1038-1042.   Published online November 1, 2005
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Emission of Spin-polarized Light in Nitride-based Spin LEDs with Room-temperature Ferromagnetic (Ga,Mn) N Layer
J Electr Electron Mater 2005;18(11):1056-1060.   Published online November 1, 2005
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Electrochemical Corrosion and Chemical Mechanical Polishing(CMP) Characteristics of Tungsten Film using Mixed Oxidizer
J Electr Electron Mater 2005;18(4):303-308.   Published online April 1, 2005
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Polarizations and Electrical Properties of PMS-PZT Ferroelectric Materials
J Electr Electron Mater 2004;17(12):1314-1319.   Published online December 1, 2004
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Study on HTS Antenna Array with Circularly Polarization for DBS Receiver
D. C. Chung, C. H. Yun, H. S. Choi
J Electr Electron Mater 2004;17(7):776-781.   Published online July 1, 2004
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Optical Devices : The Properties of Diffraction Efficiency in Polarization Holography using the Ag and MgF2/AsGeSeS Multi-layer
Sun Woong Na, Cheol Ho Yeo, Jong Bin Kim, Hong Bay Chung
J Electr Electron Mater 2002;15(12):1070-1074.   Published online December 1, 2002
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