Nozzle-printing dispensers, which utilize air pulsation as a dispensing principle, operate by transmitting air pressure to the liquid to push a constant amount of liquid. Nozzle printers have the advantage of precisely controlling energy based on liquid properties, such as viscosity and surface tension, enabling the precise application of liquid at specific locations and quantities. This study introduces a printing process sequence using a nozzle printer equipped with a high-resolution vision alignment system. It compares printing patterns according to key process variables (jet pressure, tip height, and travel speed) that affect coating quality. Experimental results showed that a coating standard deviation of 2.14 μm was achieved at a moving speed of 20 mm/s and a nozzle height of 0.2 mm, resulting in the most stable and uniform coating quality. Through these experiments, optimal conditions were identified based on factors such as coating width, uniformity, and presence of discontinuity, and the effects of these conditions on the precision manufacturing process are discussed.

In this paper, we compared and analyzed the power load patterns of dormitory buildings and office buildings to use them as basic data (demand analysis and capacity design) for the design and operation of microgrids for multi-use facilities, and the following conclusions were got. During the daytime on regular weekdays, the power consumption load pattern of office buildings was relatively large at 264.0~332.3 kWh, and during the evening hours, the power consumption load pattern of dormitory buildings was relatively large at 233.0~258.3 kWh. In the case of vacation, during the daytime on weekdays, the power consumption load pattern of office buildings was relatively large at 279.1~407.4 kWh, and in the evening, the power consumption load pattern of dormitory buildings was relatively high at 280.1~394.1 kWh. During the daytime on regular weekends, the power consumption of dormitory-type buildings was relatively high at 133.5~201.6 kWh, and it was found that the power consumption of dormitory-type buildings appeared relatively high at 187.5~252.1 kWh. During a vacation in the daytime on weekends, the power consumption of dormitory-type buildings was found to be 186.5 kWh~ and 218.6 kWh. The increase in power consumption during a vacation (December-February) compared to normal (April-June) was thought to be due to an increase in electricity demand, and the reason for the higher power consumption in dormitory buildings during the vacation was due to reduced working hours in office buildings.

Recently, the global demands for high voltage power semiconductors are increasing across various industrial fields. The use of electric cars with high safety and convenience is becoming practical, and IGBT modules of 3.3 kV and 1.2 kA or higher are used for electric locomotives. Delicate design and advanced process technology are required, and research on the optimization of high-voltage IGBT parts is urgently needed in the industry. In this study, we attempted to design a simulation process through TCAD (technology computer-aid design) software to optimize the process conditions of the fielding process among the core unit processes for an especial high yield voltage. As well, the prior circuit technology design and a ring pattern with a large number of ring formation structures outside the wafer similar to the chip structure of other companies were constructed for 3.3 kV NPT-IGBT through a unit process demonstration experiment. The ring pattern was designed with 21 rings and the width of the ring was 6.6 μm. By changing the spacing between patterns from 17.4 μm to 35.4 μm, it was possible to optimize the spacing from 19.2 μm to 18.4 μm.

Electrohydrodynamic jet (e-jet) printing, a type of direct contactless microfabrication technology, is a versatile fabrication process that enables a wide range of micro/nanopattern arrays by applying a strong electric field between the nozzle and the substrate. In general, the morphology and the thickness of polymers/quantum dot micropatterns show a systematic dependence on the diameter of the nozzle and the ink composition with a fully automated printing machine. The purpose of this report is to provide typical examples of e-jet printed micropatterns of polymers/quantum dots to explain the effect of each process variable on the result of experiments. Here, we demonstrate several operating conditions that allow high-resolution printing of layers of polymers/quantum dots with a precise control over thickness and submicron lateral resolution.

For the past several decades, various next-generation patterning methods have been developed to obtain well-designed nano-to-micro structures, such as imprint lithography, nanotransfer printing (nTP), directed self-assembly (DSA), E-beam lithography, and so on. Especially, nTP process has much attention due to its low processing cost, short processing time, and good compatibility with other patterning techniques in achieving the formation of high-resolution functional patterns. To transfer functional patterns onto desirable substrates, the use of soft materials is required for precise replication of master mold. Here, we introduce a simple and practical nTP method to create highly ordered structures using various polymeric replica materials. We found that polymethyl methacrylate (PMMA), polystyrene (PS), and polyvinylpyridine (PVP) are possible candidates for replica materials for reliable duplication of Si master mold based on systematic analysis of pattern visualization. Furthermore, we successfully obtained well-defined metal and oxide nanostructures with functionality on target substrates by using replica patterns, through deposition and transfer process. We expect that the several candidates of replica materials can be exploited for effective nanofabrication of complex electronic devices.

Micro-LEDs can be applied to various parts of a product. However, it has disadvantages compared to general LEDs in large displays such as low efficiency, intensity, and contrast ratio, among others, owing to their short history of study. The simulations were carried out using ray-tracing software to investigate the change in light intensity and light distribution according to pattern shapes on the sapphire substrate of the flip-chip micro-LED (FC μ-LED) array. Three patterns-concave square patterns, convex square patterns, and Ag coated convex patterns-which existed on the opposite side of FC μ-LEDs (115 ㎛ × 115 ㎛) array, were applied. The intensity of FC μ-LEDs on the center of the receivers depends on the pattern depth with shape. The concave square patterns having FC μ-LEDs arrays show that decreasing intensity as the patterns depth. On the contrary, the convex square patterns having FC μ-LEDs arrays shows that increasing intensity as the patterns depth. In addition, the highest intensity shows that FC μ-LEDs having Ag-coated convex patterns on the opposite side of sapphire lead to a reduction in light crosstalk owing to the Ag film.

In this study, a patterning method using self-aligned nanostructures was introduced to fabricate GaN-based fin-gate HEMTs with normally-off operation, as opposed to high-cost, low-productivity e-beam lithography. The honeycomb-shaped fin-gate channel width is approximately 40~50 nm, which is manufactured with a fine width using a proposed method to obtain sufficient fringing field effect. As a result, the threshold voltage of the fabricated device is 0.6 V, and the maximum normalized drain current and transconductance of Gm are 136.4 mA/mm and 99.4 mS/mm, respectively. The fabricated devices exhibit a smaller sub-threshold swing and higher Gm peak compared to conventional planar devices, due to the fin structure of the honeycomb channel.

Privacy films are typically manufactured by combining black resin and transparent louver-shaped patterns. The use of black resin results in excellent light-shielding. However, black resin can reduce the transmittance of privacy films at the front viewing angle. In this study, we applied SiO₂/SiON multi-layer thin films on a privacy film to maintain transmittance at the front viewing angle and improve light-shielding at the side viewing angle. We determined the optimum combination of thicknesses of the SiO₂/SiON multi-layer stacks to increase the overall transmittance; the light shielding could be maximized at the side viewing angle.

This study discusses and demonstrates the structural stability of highly ordered Pt patterns formed on a transparent and flexible substrate through the process of nanotransfer printing (nTP). Bending tests comprising approximately 1,000 cycles were conducted for observing Pt line patterns with a width of 1 μm formed along the direction of the horizontal (x-axis) and vertical (y-axis) axes (15 mm × 15 mm); and adhesion tests were performed with an ultrasonicator for a period greater than ten minutes, to analyze the Pt crossbar patterns. The durability of both types of patterns was systematically analyzed by employing various microscopes. The results show that the Pt line and Pt crossbar patterns obtained through nTP are structurally stable and do not exhibit any cracks, breaks, or damages. These results corroborate that nTP is a promising nanotechnology that can be applied to flexible electronic devices. Furthermore, the multiple patterns obtained through nTP can improve the working performance of flexible devices by providing excellent structural stability.

An epitaxial GaN layer was grown on a cone-shape-patterned sapphire substrate (PSS) (Sample A) and an AlN-buffered PSS (Sample B) with two growth steps under the same process conditions by employing the hydride vapor phase epitaxy (HVPE) method. We have investigated the characteristics of the GaN layer grown on two kinds of substrates at each growth step. The cross-sectional SEM image of the GaN layer grown on the two types of substrates showed growth states of GaN layers formed during the 1st and 2nd growth steps with different growth durations. Dislocation density was obtained by calculation using the FWHM value of the rocking curve for (002) and (102). Sample A showed 2.62+08E and 6.66+08E and sample B exhibited 5.74+07E and 1.65+08E for two different planes. The red shift was observed is photoluminescence (PL) analysis and Raman spectroscopy results. GaN layers grown on AlN-buffered PSS exhibited better optical and crystallographic properties than GaN layers grown on PSS.

In this study, we investigated the effect of electrode pattern design on the thermal shock resistance and temperature uniformity of a ceramic heater. A cordierite substrate with a low thermal expansion coefficient was fabricated by tape casting, and a tungsten electrode was printed and used as a heating element. The temperature distribution of the ceramic heater was calculated by a finite-element method (FEM) by considering various electrode patterns, and the tensile stress distribution due to the thermal stress was calculated. In the electrode pattern with a single-line width, the central part of the ceramic heater was heated to the maximum temperature, and the position of the ceramic heater having a double-line width was changed to the maximum temperature, depending on the position of the minimum line width pattern. The highest tensile stress was found along the edges of the ceramic heater. The temperature gradient at the edge determined the tensile stress intensity. The smallest tensile stress was observed for electrode pattern D, which was expected to be advantageous in resisting thermal shock failures in ceramic heaters.

Randomly patterned and wet chemical etching processes were used to treat anti-glare of display cover glasses. The surface and optical properties of grain size and surface morphology controlled by randomly patterned etching and wet chemical solution etching were investigated. The surface morphology and roughness of the etched samples were examined using a spectrophotometer and a portable surface roughness (Ra) measuring instrument, respectively. The gloss caused by reflection from the glass surface was measured at 60° using a gloss meter. The surface of the sample etched by the doctor-blade process was more uniform than that obtained from a screen pattern etching process at gel state etching process of the first step. The surface roughness obtained from the randomly patterned etching process depended greatly on the mesh size, which in turn affected the grain size and pattern formation. The surface morphology and gloss obtained by the etching process in the second step depended primarily on the mesh size of the gel state etching process of the first step. In our experimental range, the gloss increased on decreasing the grain size at a lower mesh size for the first step process and for longer reaction times for the second step process.

Recently, there has been much focus on the controlled alignment and patterning process of nanowires for nanoelectronic devices. A simple and effective method for patterning of highly aligned nanowires using a microcontact printing technique is demonstrated. In this method, nanowires are first directionally aligned by contact printing, following which line and space micropatterns of nanowire arrays are accomplished by microcontact printing with a micro patterned NOA mold.

Resistive random access memory (ReRAM) of metallic conduction channel mechanism is based on the electrochemical control of metal in solid electrolyte thin film. Amorphous chalcogenide materials have the solid electrolyte characteristic and optical reactivity at the same time. The optical reactivity has been used to improve the memory switching characteristics of the amorphous As2Se3-based ReRAM. This study focuses on the formation of holographic lattices patterns in the amorphous As2Se3 thin film for straight conductive channel. The optical parameters of amorphous As2Se3 thin film which is a refractive index and extinction coefficient was taken by n&k thin film analyzer. He-Cd laser (wavelength: 325 nm) was selected based on these basic optical parameters. The straighten conduction channel was formed by holographic lithography method using He-Cd laser. Ag+ ions that photo-diffused periodically by holographic lithography method will be the role of straight channel patterns. The fabricated ReRAM operated more less voltage and indicated better reliability.

Degradation in power cables used in distribution lines to the material of the wire, manufacturing method, but also the line of the environment, generates a variety of degradation depending upon the type of load. The local wire deterioration weighted wire breakage accident can occur frequently, causing significant proprietary damage can lead to accidents and precious. In this study, the signal detected by the eddy current aim to develop algorithms capable of determining the signals for the top part and at least part of the signal by using a signal processing technique called K-means algorithm.

Recently many studies being carried out to increase the light efficiency of LED. The external quantum efficiency of LED, generally the light efficiency, is determined by the internal quantum efficiency and the light extraction efficiency. The internal quantum efficiency of LED was already reached to more than 90%, but the light extraction efficiency is still insufficient compared with the internal quantum efficiency because the total internal reflection is generated in the interface between the LED chip and air. Thus, we studied about flip chip LED with PSS and performed the optical simulation which find more optimized PSS for flip chip LED to increase the light extraction efficiency. Decreasing of the total internal reflection and effect of diffused reflection according to PSS improved the light extraction efficiency. To get more higher the efficiency, we simulated flip chip with PSS that the parameters are arrangement, edge spacing, radius, height and shape of PSS.

In this study, the change of optical characteristics was studied according to the micro optical pattern provided by photo lithography followed by thermal reflow process. The shape and luminance variation with micro pattern was evaluated by SEM and spectrometers. Also, we analyzed the luminance characteristics using the 3D-optical simulation (Optis works) program. As a result, we found that the radius of curvature(R) in micro pattern is decreased up to 77%(150℃) compared to the radius of curvature at the condition 100℃, which is caused by efficient reflow of organic material without chemical changes. The highest enhancement of brightness with optimum micro pattern was obtained at the condition of 120℃ reflow process. The brightness gain with optical micro patterns is more than 15% at the condition of R=16.95 um, θ =77.14° compared to original optical source. The results of light simulation with various radius of curvature and side angle of pattern shows the similar result of experiment evaluation of light behavior on optical micro patterns. It is regarded that the more effect on light enhancement was contributed by side angle which is effective factor on light reflection, rather than the curvature of micro-patterns.

In this study, we propose Ti hole pattern structure on the transparent conductive oxide (TCO) lessdye-sensitized solar cells (DSSCs) using the lift-off process to improve the low light transmittance and lowefficiency caused by opaque Ti electrode. The formation of Ti hole patterns make it possible to move the dyeadsorption and electrolyte. The DSSCs with Ti hole patterns showed a higher photoelectric conversion efficiency(PCE) than those with general structure by 11.1%. As a result, The Ti hole pattern structure can be improved toincrease the light absorption of the dyes and PCE of the TCO-less DSSCs is also increased.

Electrode pattern effects on the capacitive humidity sensor were investigated. The fabrication of the capacitive humidity sensor was formed with three steps. The bottom electrode was formed on the silicon substrate with Pt/Ti thin layer by using shadow mask and e-beam evaporator. The photosensitive polyimide was formed on the bottom electrode by using photolithography process as a humidity sensitive thin film. The upper electrode was formed on the polyimide thin film with Pt/Ti thin layer by using e-beam evaporator and lift-off method. Three electrode patterns, such as circle, square, and triangle pattern, were used and changed the sizes to investigate the effects. The capacitances of the sensors were decreased 622 to 584 pF with the area decreament of patterns 250,000 to 196,250 μm2. From these results, a capacitive humidity sensor with photo sensitive polyimide is expected to be applied to a high sensitive humidity sensor.

Laser direct patterning of indium tin oxide(ITO) is one of new methods of direct etching process to replace the conventional photolithography. A diode pumped Q-switched Nd:YVO4 (λ= 1,064 nm) laser was used to produce ITO electrode on various transparent oxide semiconductor films such as zinc oxide(ZnO). The laser direct etched ITO patterns on ZnO were compared with those on glass substrate and were considered in terms of the overlapping rate of laser beam. In case of the laser etching on double-layer, it was possible to obtain the higher overlapping rate of laser beam.

We were analyzed the piezoelectric characteristic for electronics printing to inkjet printing system. These applications were possible use to Actuator, MEMS, FPCB, RFID, Solar cell and LCD color filter etc. Piezoelectric print head is firing from ink droplet control consideration ink viscosity properties. At this time, micro pattern for PCB metal printing was possible by droplet control of piezoelectric driving. These driving characteristics are variable voltage pulse waveform. We are used the piezoelectric analysis software of Finite Element Method (FEM), Piezoelectric design parameters are acquired from piezoelectric analysis, and measurement of piezoelectric. It designed for piezoelectric head to possible electric print pattern of inkjet printing system. For this validity we were established through in comparison with simulation and measurement. Designed piezoelectric specification obtained voltage 98V, firing frequency 10 kHz, resolution 360dpi, drop volume 20pl, nozzle number 256, and nozzle pitch 0.33 mm.

Sapphire substrate was patterned by a selective chemical wet etching technique, and GaN/InGaN structures were grown on this substrate by MOVPE (Metal Organic Vapor Phase Epitaxy). The surface of grown GaN on patterned sapphire substrate (PSS) has good morphology and uniformity. The patterned sapphire substrate LED showed better light output than conventional LED that improvement 50%. We think these results come from enhancement of internal quantum efficiency by decrease of threading dislocation and increase of light extraction efficiency. Also these LED showed more uniform emission distribution in angle than conventional LED.