Next-generation displays should be transparent and flexible as well as having high resolution and frame number. The main factor for active matrix organic light emitting diode and next-generation displays is the development of TFTs (thin-film transistors) with high mobility and large area uniformity. The TFTs used for transparent displays are mainly oxide TFT that has oxide semiconductor as channel layer. Zinc-oxide based substances such as indium-gallium-zinc-oxide has attracted attention in the display industry. In this paper, the mobility improvement of low cost oxide TFT is studied for fast operating next-generation displays by overcoming disadvantages of amorphous silicon TFT that has low mobility and poly silicon TFT that requires expensive equipment for complex process and doping process.

Electronic systems based on solid state devices have changed to be more complicated and miniaturized as the electronic systems developed. If the electronic systems are exposed to HPEM (high power electromagnetics), the systems will be destroyed by the coupling effects of electromagnetic waves. Because the HPEM has fast rise time and high voltage of the pulse, the semiconductors are vulnerable to external stress factor such as the coupled electromagnetic pulse. Therefore, we will discuss about malfunction behavior and DFR (destruction failure rate) of the semiconductor caused by amplitude and repetition rate of the pulse. For this experiment, the pulses were injected into the pins of general purpose IC due to the fact that pulse injection test enables the phenomenon after the HPEM is coupled to power cables. These pulses were produced by pulse generator and their characteristics are 2.1 [ns] of pulse width, 1.1 [ns] of pulse rise time and 30, 60, 120 [Hz] of pulse repetition rate. The injected pulses have changed frequency, period and duty ratio of output generated by Timer IC. Also, as the pulse repetition rate increases the breakdown threshold point of the timer IC was reduced.

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated on oxidized n+ Si wafers. The thickness of 30 nm Al2O3 films were deposited on the oxidized Si wafers by atomic layer deposition, which acted as the gate insulators of ZTO TTFTs. The Al2O3 films were rapid-annealed at 400 , 600 , 800 , and 1,000 , respectively. Active layers of ZTO films were deposited on the Al2O3/SiO2 coated n+ Si wafers by rf magnetron sputtering. Mobility and threshold voltage were measured as a function of the rapid-annealing temperature. X-ray photoelectron spectroscopy (XPS) were carried out to observe the chemical bindings of Al2O3 films. The annealing effects of gate-insulator on the properties of TTFTs were analyzed based on the results of XPS.

This paper suggests a high performance lateral super barrier rectifier (Lateral SBR) device which has the advantages of both Schottky diode and pn junction, that is, low forward voltage and low leakage current, respectively. Advantage of the proposed lateral SBR is that it can be easily implemented and integrated in current BCD platform. As a result of simulation using TCAD, BVdss = 48 V, VF = 0.38 V @ IF = 35 mA, T_j = 150℃ were obtained with very low leakage current characteristic of 3.25 uA

In this study, in order to develop the composition ceramics with the excellent electrocaloric properties, (Pb0.88La0. 08)(Zr0.65Ti0.35)O3 ceramics were fabricated by the conventional solid-state method. Electrocaloric effects of (Pb0.88La0.08)(Zr 0.65Ti0.35)O3 ferroelectric ceramics were investigated and discussed using the characteristics of P-E hysteresis loops at wide temperature range from room temperature to 220 . The temperature change ΔT due to the electrocaloric effec t was calculated by Maxwell’s relations, and reached the maximum of 0.19 at 190 under applied electric field of 30 kV/cm.

Some insulating materials are organized and analyzed with variables to obtain the optimized profile of encapsulated three phase of epoxy barrier which is applied to gas compartment and supporting conductors for high voltage GIS (gas insulated switchgear). The high voltage GIS is used in electrical power system and operating reliability. In this paper, optimization possibility of barrier shape including both electrical insulation performance and mechanical strength, premised on that condition minimizing volume and light weight should be kept for high voltage GIS, could be achieved by analysis simulation. As a result, filling material which is lower permittivity such as SiO2 instead of Al2O3 properly to the epoxy material, can be improved to increase the electrical insulation performance and mechanical strength for an optimized profile barrier of a high voltage GIS.

In this paper, we fabricated ceramic body and sapphire wafer in order to develop a hydraulic pressure sensor with high sensitivity and high temperature stability. The sapphire wafer was adopted with a membrane of capacitance ceramic pressure sensor. The capacitance value of the sensor for the finite element analysis(FEM) showed a linear pressure characteristics. Membrane was processed with a diameter of 32.4 ㎜ and a thickness of 1 ㎜ by using alumina powders. Ceramic body was processed with a diameter 32.4 ㎜ and a thickness 5 ㎜. The capacitance pressure sensor was made with high heat treatment of the ceramic body and the sapphire wafer. Initially capacitance of the pressure sensor was 50 pF and a capacitance of 110 pF was measured from 5 bar pressure. Output voltage of 5 V was appeared at 5 bar pressure.

Molded insulation materials are widely used from large electric power transformer apparatus to small electrical machinery and apparatus. In this study, by adding MgO with the average particle of several tens nm and the excellent thermal conductivity into molding material, we improved the problem of insulation breakdown strength decrease according to rising temperature in overload or in bad environmental condition. We confirmed the life evaluation by using the insulation breakdown and inverse involution to investigate the electrical characteristics of nano-composites materials. By using a scanning electron microscope, it is confirmed that MgO power with the average particle size of several tens nm is distributed and the filler particles is uniformly distributed in the cross section of specimens. And it is confirmed that the insulation breakdown strength of Virgin specimens is rapidly decreased at the high temperature area. But it is confirmed that the insulation breakdown strength of specimens added MgO slow decreased by thermal properties in the high temperature area improved by the contribution of the heat radiation of MgO and the suppression of tree. The results of life prediction using inverse involution, it is confirmed that the life of nano-composites is improved by contribution of MgO according to the predicted insulation breakdown strength after 10 years of specimens added 5.0 wt% of MgO is increased about 2.9 times at RT, and 4.9 times at 100 than Virgin specimen, respectively.

We analyzed the correlation between breakdown voltage(BDV) of liquid nitrogen(LN2) and factors. The chosen factors affecting the breakdown are the diameter of electrode, gap length, temperature of LN2, and pressure of LN2. The BDV of LN2 was increased with increasing the diameter, the gap length and the pressure. And The BDV of LN2 was increased with decreasing the temperature. However, correlation coefficient was different from each other depending on the situation. The BDV exhibited a very high correlation coefficient of 0.92227 to dependence on the diameter. And a very high correlation coefficient of 0.94980 to dependence on the pressure under sphere(D 7.5 mm)-plane electrode. When the pressure is applied, sphere-plane electrode is the correlation coefficient was higher than that of the needle-plane electrode. It shows the dependence of a temperature coefficient of ?0.758290 ~ -0.39946 under needle-plane electrode.

The typical winter heating unit heating mat. The product is to be found in the development of new water heating mat today. The product that circulates the water through the hose inside the mat with your existing heating mat electric heated mat is different from boiling water. However, no clear standards for noise and safety, consumer choice is giving confusing information about the product is low. We were to develop a high heat retention and stability than conventional sleeping mats to produce creative than traditional hot mats, heated mats general comparison with experimental results is a more efficient heat retention mat is produced.

Generally, MWCNT, with thermal, chemical and electrical superiority, is manufactured with CVD (Chemical Vapor Deposition). Using MWCNT, it is comonly used as gas sensor of MOS-FET structure. In this study, in order to repeatedly detect gases, the author had to effectively eliminate gases absorbed in a MWCNT sensor. So as to eliminate gases absorbed in a MWCNT sesor, the sensor was applied heat of 423[K], and in order to observe how the applied heat was diffused within the sensor, the author interpreted the diffusion process of heat, using COMSOL interpretation program. In order to interpret the diffusion process of heat, the author progressed modeling with the structure of MWCNT gas sensor in 2-dimension, and defining heat transfer velocity(u=△T/△χ), accorded to governing equation within the sensor, the author proposed heat transfer mechanism.

Road lighting has emerged in importance as an essential system to secure safety and visibility for drivers and pedestrians. According to the Road Lighting Standards (KS A 3701), the luminance uniformity (U0) should be 0.4, the luminance uniformity for lanes (UI) should be 0.5, and a threshold increment (TI) of 10% should be satisfied. In this study, we conducted simulations using the Relux program in which the secondary optical lens was applied to a 21 W engine. Ten LED engines were installed on a two-way four-lane road, and the simulation result satisfied the requirements with U0 0.47, UI 0.63 and TI 8%. The U0, UI, and TI were compared with the angle of the LED streetlight varied in the range of 9° ~ 15° with 0.5° intervals. The range was selected as ± 25% of the standard inclination angle of 12° according to the Road Lighting Standard. The U0 was high and the UI and TI were low when the tilting angle was in the range of 9.5° ~ 10.5°. Consequently, an optimum-design of lighting distribution was obtained for the concrete two-way four-lane road when the inclination angle was 9°.