In this study, in order to develop the composition ceramics with the excellent electrocaloric properties, 8/65/35 PLZT ceramics were fabricated by the conventional solid-state method with the addition of Bi2O3, CuO, Li2CO3 and the variation of sintering temperature from 930℃ to 990℃. The XRD pattern of all specimens indicated general perovskite structure and the rhombohedral phase were observed. Curie temperature (Tc) of all specimens was observed in the vicinity of about 190℃. Density, coercive field and remnant polarization of the specimen sintered at 950℃ was 7.55 g/cm3, 8.895 kV/cm, 11.22 μC/㎠, respectively. EC effect of PLZT ceramics was measured by indirect method and the temperature change ΔT due to the electrocaloric effect was calculated by Maxwell’s relations. ΔT of ceramic sintered at 950℃ was 0.21℃ under application of 40 kV/cm at 190℃.

We have studied structural, optical and electrical properties of In-Ga-doped ZnO (IGZO) thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 30, 50, 70, and 90 W respectively. All of the IGZO thin films transmittance in the visible range (400 nm ~ 800 nm) was above 83%. XRD analysis showed the IGZO thin films amorphous structure of the thin films without any peak. And also IGZO thin film have low resistivity (1.99×10-3 Ωcm), high carrier concentration (6.4×1020 cm-3), and mobility (10.3 cm2V-1s-1). By the studies we found that IGZO transparent thin film can be used as optoelectronic material and introduced application possibility for future electronic devices.

The second-generation HTS wire its YBCO coated conductor is widely used in the superconducting power apparatus. The YBCO coated conductor uses the normal-superconducting junction to increase the transport capacity of superconducting power apparatus when it is applied. The normal-superconducting junction can be a cause of reducing the stability of the superconducting power apparatus when a fault current is applied. Thus, in this study we have conducted the effect analysing normal-superconducting junction for the fault current using transport current and quench resistance. From the experimental results when a fault current is applied, the effect on the normal-superconducting junction is reduced the larger the amplitude of the fault current and is helpful to maintain the thermal stability of the HTS wire.

A vacuum Interrupter (VI), a core part that composes the breaking part of medium-voltage vacuum circuit breaker (VCB), has the excellent insulation performance and arc-extinguishing capability. SF6 gas had been used for the external insulation of VIs since the dielectric strength of SF6 gas is superior to that of other insulation gases. However, because of environmental problems related with global warming, a solid-insulated technology was recently researched. The functionally graded material (FGM), as changing spatially the distribution of the relative permittivity inside an insulator, can reduce the electric field stress at the specific region. Especially, the external insulation performance of the VI with the molded FGM insulator is greatly improved as compared with that of the existing VI or the VI with a new external shield. In this paper, the effectiveness of this FGM insulator is verified by the numerical simulation.

In this study, the partial discharge degradation properties for 2-core PVC cable(2 cores × 1.5 mm2 cross section, length of 10 cm, 20 cm, 30 cm) following immersion with the salt water that the 2%, 4%, 8% of NaCl is dissolved in 100 g of distilled water for 48 and 96 hours has been measured. The results of this study are as follows. When the degradation time in salt water of 2% NaCl is 48 hours, it found that the number of partial discharge increased as about 40 pps, 50 pps, 90 pps with increasing the length of cable to 10 cm, 20 cm, 30 cm. In case the concentration and degradation time is same, the inception and extinction voltage decreased with increasing the length of cable. When the degradation time in salt water is 96 hours and the length of cable is 20 cm, it found that the number of partial discharge decreased as 3,000 pps, 500 pps, 100 pps with increasing the concentration of NaCl to 2%, 4%, 8%.

The perovskite solid solutions of the Sr1-xMgxFe3+ 1-τFe4+ τO3-y system (x=0.0, 0.1, 0.2, and 0.3) were synthesized in N2 at 1,150℃. X-ray powder diffraction study assured that all the four samples had cubic symmetries(SM-0: 3.865 Å, SM-1: 3.849 Å, SM-2: 3.833 Å, and SM-3: 3.820 Å) and that the lattice volumes decreased steadily from 57.7 Å3 to 55.7 Å3 with x values. The nonstoichiometric chemical formulas were determined by Mohr salt analysis and with the increase of x values the amounts of Fe4+ ion and oxygen were decreased simultaneously. Thermal analysis showed that SM-0 started to lose its oxygen at 450℃ and SM-1, Sm-2, and SM-3 began to lose their oxygen at around 350～400℃. SM-0 showed almost reversible weight change in the cooling process. All the samples exhibited semiconducting behaviors in the temperature range of 10~400℃. Conductivities of the 4 samples were decreased in the order of SM-0, SM-1, SM-2, and SM-3 at constant temperature. The activation energies of the conductions were in the range of 0.176 eV～0.244 eV.

The characterizations of zinc oxide (ZnO) buffer layers grown by unbalanced magnetron (UBM) sputtering under various substrate temperatures for inverted organic solar cells (IOSCs) were investigated. UBM sputter grown ZnO films exhibited higher crystallinity with increasing the substrate temperature, resulting in uniform and large grain size. Also, the electrical properties of ZnO films are improved with increasing substrate temperature. In the results, the performance of IOSCs critically depended on the substrate temperature during the film growth because the crystalllinity of the ZnO film affect the carrier mobility of the ZnO film.

We have investigated the properties of Al-doped ZnO (AZO) thin films as functions of atomic layer deposition (ALD) oxidants. AZO transparent conducting oxides (TCOs) layer was deposited by ALD with adding trimethylaluminum (TMA) and diethylzinc (DEZn). AZO films were deposited at low temperature with H2O and O3 as oxidants. Electrical, optical and structural properties of AZO thin films were investigated by 4-point probe, Hall effect measurement, UV-VIS, and AFM. Microstructure and atomic bonding states were investigated by HRXRD and XPS. The resistivity of AZO films grown using H2O was lower than the films grown using H2O and O3, by approximately two orders of magnitude. The differences in oxygen vacancy peak intensity of AZO films were correlated to the optical and electrical properties.

This paper presents an electrical feature analysis of hysteresis curves in memristor differential and intergral control circuit. After making macro model of the memristor device, electric characteristics of the model such as time analysis, frequency dependent DC I-V curves were performed by PSPICE simulation. Also, we made a circuit of memristor-capacitor based on nano-wired memristor device and analyzed the simulated PSPICE results. Finally, we proposed a memristor based differential or integral control circuit, analyzed hysteresis curve characteristic in the control circuit.

We investigated and compared two methods of in-situ oxidation and chemical etching treatment (CET) to remove the boron rich layer (BRL). The BRL is generally formed during boron doping process. It has to be controlled in order not to degrade carrier lifetime and reduce electrical properties. A boron emitter is formed using BBr3 liquid source at 930℃. After that, in-situ oxidation was followed by injecting oxygen of 1,000 sccm into the furnace during ramp down step and compared with CET using a mixture of acid solution for a short time. Then, we analyzed passivation effect by depositing Al2O3. The results gave a carrier lifetime of 110.9 ㎲, an open-circuit voltage (Voc) of 635 mV at in-situ oxidation and a carrier lifetime of 188.5 ㎲, an Voc of 650 mV at CET. As a result, CET shows better properties than in-situ oxidation because of removing BRL uniformly.

Degradation diagnosis of cable is one of major issues for operation and maintenance in overhead distribution power lines. The diagnostic system for overhead power lines is composed of three parts in functional aspect - a travelling unit, a sensing unit and a communication unit. Among them, sensor detects the defects such as corrosion and disconnecting of power lines. Performance of sensor is very important, and besides, the size and structure of sensor is restricted for installation to small and lightweight diagnostic system. This paper suggests an optimal eddy current sensor best suit for small and lightweight diagnostic system in consideration of detecting performance, size and ease of installation and so on. Proposed sensor has been designed by Drum core structure and can be applied to the all domestic overhead power lines regardless of the cross-sectional areas. Also, it is showed that results of mock environmental test are satisfied.

Recently many studies being carried out to increase the light efficiency of LED. The external quantum efficiency of LED, generally the light efficiency, is determined by the internal quantum efficiency and the light extraction efficiency. The internal quantum efficiency of LED was already reached to more than 90%, but the light extraction efficiency is still insufficient compared with the internal quantum efficiency because the total internal reflection is generated in the interface between the LED chip and air. Thus, we studied about flip chip LED with PSS and performed the optical simulation which find more optimized PSS for flip chip LED to increase the light extraction efficiency. Decreasing of the total internal reflection and effect of diffused reflection according to PSS improved the light extraction efficiency. To get more higher the efficiency, we simulated flip chip with PSS that the parameters are arrangement, edge spacing, radius, height and shape of PSS.