We have studied structural, optical and electrical properties of In-Ga-doped ZnO (IGZO) thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 30, 50, 70, and 90 W respectively. All of the IGZO thin films transmittance in the visible range (400 nm ~ 800 nm) was above 83%. XRD analysis showed the IGZO thin films amorphous structure of the thin films without any peak. And also IGZO thin film have low resistivity (1.99×10-3 Ωcm), high carrier concentration (6.4×1020 cm-3), and mobility (10.3 cm2V-1s-1). By the studies we found that IGZO transparent thin film can be used as optoelectronic material and introduced application possibility for future electronic devices.
