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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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나노,산화물 전자재료 : 멤리스터 기반 미분 및 적분제어 회로에서의 커패시턴스 변화에 따른 히스테리시스 곡선 특성 분석

최진웅, 모영세, 송한정

Nano and Oxide Electronics : Regular Paper ; In Memristor Based Differential or Integral Control Circuit, Hysteresis Curve Characteristic Analysis According to Capacitance

Jinwoong Choi, Youngsea Mo, Hanjung Song
J Electr Electron Mater 2015;28(10):658-664.
Published online: October 1, 2015
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This paper presents an electrical feature analysis of hysteresis curves in memristor differential and intergral control circuit. After making macro model of the memristor device, electric characteristics of the model such as time analysis, frequency dependent DC I-V curves were performed by PSPICE simulation. Also, we made a circuit of memristor-capacitor based on nano-wired memristor device and analyzed the simulated PSPICE results. Finally, we proposed a memristor based differential or integral control circuit, analyzed hysteresis curve characteristic in the control circuit.

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Nano and Oxide Electronics : Regular Paper ; In Memristor Based Differential or Integral Control Circuit, Hysteresis Curve Characteristic Analysis According to Capacitance
J Electr Electron Mater. 2015;28(10):658-664.   Published online October 1, 2015
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Nano and Oxide Electronics : Regular Paper ; In Memristor Based Differential or Integral Control Circuit, Hysteresis Curve Characteristic Analysis According to Capacitance
J Electr Electron Mater. 2015;28(10):658-664.   Published online October 1, 2015
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