This paper was analyzed electrical characteristics of super junction power MOSFETconsidering to charge imbalance. We extracted optimal design and process parameter at -15% of chargeimbalance. Considering extracted design and process parameters, we fabricated super junction MOSFETand analyzed electrical characteristics. We obtained 600∼650 V breakdown voltage, 224∼240 mΩ onresistance. This paper was showed superior on resistance of super junction MOSFET. We can use forautomobile industry.

The temperature dependent characteristics on the properties of SiC Schottky Diode has beeninvestigated. In this study, the temperature dependent current-voltage characteristics of the SiC Schottkydiode were measured in the range of 300 ∼ 500 K. Divided into pre- and post- irradiated device wasmeasured. The barrier height after irradiation device at 500 K increased 0.15 eV compared to 300 K, thebarrier height of pre- neutron irradiated Schottky diode increased 0.07 eV. The effective barrier heightafter irradiation increased from 0.89 eV to 1.05 eV. And ideality factor of neutron irradiated Schottkydiode at 500 K decreased 0.428 compared to 300 K, the ideality factor of pre- neutron irradiated Schottkydiode decreased 0.354. Also, a slight positive shift in threshold voltage from 0.53 to 0.68 V. we analyzedthe effective barrier height and ideality factor of SiC Schottky diode as function of temperature.

For the semiconductor device safety from over current in the digital electronic circuit systemmust be surely designed that it`s surface mount type micro fuse device. In this paper, We has analysedto the fusing character of micro fuse as a function changed thickness of thermosetting ink epoxy. To thechange of thermosetting ink epoxy thickness with in production lot, in the electrically character (fusingtest in the 2 multiple over current and 10 multiple over current, surface temperature test in the 1.25multiple over current) of micro fuse has been tested. According to the electrically character result,changed thickness of thermosetting ink epoxy in designed micro fuse withheld direct effect in both endresistance changes. Also, because high thermal energy in the micro fuse test of over current wasoccurred to effect such as thermal runaway and explosion. Therefore, screen printing process in thedesign of micro fuse using thermosetting ink epoxy is very important for production quality improvement.

(Na0.525K0.4425Li0.0375)(Nb0.9975Sb0.065Ta0.0375)O3 + 0.3 wt%CoO ceramics were fabricated as a functionof CuO addition by traditional solid state sintering process in order to develop excellent lead-freepiezoelectric ceramics composition. The addition of CuO in the LNKNTS composition ceramics caneffectively enhance the densification of the ceramics, resulting in the oxygen vacancies as hardeningeffect. The excellent piezoelectric properties of electromechanical coupling factor(kP) of 0.378, piezoelectricconstant(d33) of 152 pC/N were obtained from the 1.0 mol% CuO doped LNKNTS ceramics sintered at1,020℃ for 3 h.

In this study, the temperature control device was designed for the study in order to detect theoutput in frequency of temperature, and the study confirmed accurate temperature values treatedsystemically by using expanded A/D converting Technology. The control technology of functional sensorincluded the output error Detection. For the future study, it is necessary to implement a control device bybuilding multiple circuits integrally with different types of sensors such as a automatically and intelligentnotification function sensors.

For feasible study of opto-electrical application regarding to oxide semiconductor, weimplemented the N doped ZnO growth using a atomic layer deposition technique. The p-type ZnOdeposition, necessary for ZnO-based optoelectronics, has considered to be very difficulty due tosufficiently deep acceptor location and self-compensating process on doping. Various sources of N such asN2, NH3, NO, and NO2 and deposition techniques have been used to fabricate p-type ZnO. Hallmeasurement showed that p-type ZnO was prepared in condition with low deposition temperature anddopant concentration. From the evaluation of photoluminescence spectroscopy, we could observe defectformation formed by N dopant. In this paper, we exhibited the electrical and optical properties of N-dopedZnO thin films grown by atomic layer deposition with NH3OH doping source.

We have investigated the effect of electrical properties of amorphous InGaZnO thin filmtransistors (a-IGZO TFTs) by post thermal annealing in O2 ambient.The post-annealed in O2 ambienta-IGZOTFT is found to be more stable to be used for oxide-based TFT devices, and has betterperformance, such as the on/off current ratios, sub-threshold voltage gate swing, and, as well asreasonable threshold voltage, than others do. The interface trap density is controlled to achieve theoptimum value of TFT transfer and output characteristics. The device performance is significantlyaffected by adjusting the annealing condition. This effect is closely related with the modulation annealingmethod by reducing the localized trapping carriers and defect centers at the interface or in the channellayer.

Cs3Sb photocathode was formed by newly developed process and successive in-situ lightingdevices were fabricated in a process chamber. R, G, and B phosphors were applied on the anode plate,respectively. Major parameters such as brightness, power consumption, and efficacy were measured. Thewavelength of LED excitation source was 450 nm. Both high power and low power modes were appliedin the measurement. Measurement values were clearly differentiated by the voltage application modes. The measured values of each parameter was good enough to be applied for general lighting source. Theresults showed that Cs3Sb photocathode formed in atmospheric conditions was functioning as good as thephotocathode formed in UHV conditions, and thus it could be applied to advanced lighting devices.

When an abnormal condition occurs due to a fault current at a consumer location whereelectricity is supplied through high-Tc superconducting(HTS) cable, the HTS cable would be damaged ifthere is no appropriate method to protect it. The fault-current-limiting type HTS cable that is suggestedin this study has a structure of transport part and limit part. It conduct a zero impedance transportcurrent at ordinary operations and carry out a fault current limiting at extraordinary operations. To makea perfect this structure, it is essential to investigate electrical properties of transport part that comprisethe fault-current-limiting type HTS cable. In this paper, transport part that comprise HTS wire withcopper stabilization layer is examined the current transport properties and the stability evaluation.

B-doped Si nanoparticles were synthesized by using inductive coupled plasma and speciallydesigned double tube reactor, and their microstructures were investigated. 0∼10 sccm of B2H6 gas wasinjected during the synthesis of Si nanoparticles from SiH4 gas. Highly crystalline Si nanoparticles weresynthesized, and their crystallinity did not change with increase of B2H6 flow rates. From SEMmeasurement, their particle sizes were approximately 30 nm regardless of B2H6 flow rates. From SIMSanalysis, almost saturation of B in Si nanoparticles was detected only when 1 sccm of B2H6 was injected. When B2H6 flow rate exceeded 5 sccm, higher concentration of B than solubility limit was detected evenif any secondary phase was not detected in XRD or HR-TEM results. Due to their high electronicconductivity, those heavily B-doped Si nanoparticles can be a potential candidate for an active material inLi-ion battery anode.

Carbon nanotubes(CNT) has chemical stability and great sensitivity characteristics. In particular, the gassensor required characteristics such as rapid, selectivity and sensitivity sensor. Therefore, CNT are ideal materialsto gas sensor. So, we fabricated the NOx gas sensors of MOS-FET type using the MWCNT (multi-walled carbonnanotube). The fabricated sensor was used to detect the NOx gas for the variation of Vgs (gate-source voltage)and electrode changed electrode spacing=30, 60, 90[㎛]. The gas sensor absorbed with the NOx gas moleculesshowed the decrease of resistance, and the sensitivity of sensor was increased by magnification of electrodespacing. Furthermore, when the voltage(Vgs) was applied to the gas sensor, the decrease in resistance wasincreased. On the other hand, the sensor sensitivity for the injection of NOx gas was the highest value at theelectrode spacing 90[㎛]. We also obtained the adsorption energy(Vgs) using the Arrhenius plots by the reduction ofresistance due to the voltage variations. As a result, we obtained that the adsorption energy was increased withthe increment of the applied voltages.

In this paper, thermal analysis of HDU (Heat Dissipation Unit) for infrared CCTV is performedby using SolidWorks Simulation (Thermal analysis) package, in order to change the part materials andHDU shape is optimized. Furthermore, HDU disperses the aggregated heat around the LED inside thehousing. The junction temperature of infrared LED checked by HDU check was 65.83℃, 42.02℃,respectively. In addition, the Thermoelement by changing the shape of the HDU was possibly designed andequipped with. Comparison with simulation and prototype measurement results, without HDU model was65.83℃, 61.99℃, respectively. In addition to with HDU model was 42.02℃, 39.01℃, respectively. Only HDUmounted into infrared CCTV is usable in the ordinary house or outdoors. Also HDU with thermal element,fan mounted into infrared CCTV is usable in a blast furnace workplace or high temperature workplace.