Abstract

This paper was analyzed electrical characteristics of super junction power MOSFETconsidering to charge imbalance. We extracted optimal design and process parameter at -15% of chargeimbalance. Considering extracted design and process parameters, we fabricated super junction MOSFETand analyzed electrical characteristics. We obtained 600∼650 V breakdown voltage, 224∼240 mΩ onresistance. This paper was showed superior on resistance of super junction MOSFET. We can use forautomobile industry.

• Keywords: Super junction, N-pillar, P-pillar, On-resistance, Breakdown voltage, Trench angle, Power devices, Power MOSFET, Epi-Layer