The SiO2/TiO2 multilayer thin films used for narrow band pass filter were fabricated using E-beam evaporation method. The narrow band pass filter was used to enhance the resolution of spectroscopy and sensor applications with near infrared (NIR) light source. The narrow band pass filter with multilayer thin films were designed with Essential Macleod program. The multilayers of SiO2/TiO2 with 32 layers were deposited on the silicon encapsulation of IR with peak wavelength (λp) of 660 nm and NIR LEDs with λp of 830 nm, 880 nm, and 955 nm. After NIR light passed through the narrow band pass filter, the full width of half maximum of 33.4~48.6 nm became narrow to 20~24 nm owing to the absorption of photons with short or long wavelength of designed band of 20 nm. The SiO2/TiO2 band pass filter fabricated in this study can be used for sensor, optoelectronics, and NIR spectroscopy applications.
