Al2O3 films on silicon carbide were fabricated by Aerosol deposition with annealing temperatureat 800℃ and 1,000℃. The effect of thermal treatment on physical properties of Al2O3 thin films has beeninvestigated by XRD (X-ray diffraction), AFM (atomic force microscope), SEM (scanning electronmicroscope), and AES (auger electron spectroscopy). Also electrical properties have been investigated byKeithley 4,200 semiconductor parameter analyzer to explain the interface trapped charge density (Dit),flatband voltage (VFB) and leakage current (Io). Al2O3 films become crystallized with increasingtemperature by calculating full width at half maximum (FWHM) of diffraction peaks, also surfacemorphology is observed by topography measurement in non-contact mode AFM. Dit was 2.26×10-12eV-1.cm-2 at 800℃ annealed sample, which is the lowest value in all samples. Also the sample annealedat 800℃ has the lowest leakage current of 4.89×10-13 A.
