Rapid thermal processing (RTP) abruptly decreases the time required to perform solar cell processes. RTP were used to form emitter of crystalline silicon solar cells. The emitter sheet resistance is studied as a function of time and temperature. The objective of this study is reduction of doping process time with same performance. Emitter diffusion was carried out by using a spin oil doping and a RTP. Rapid thermal diffusion was performed in the temperature range of 700750 for Tm 30s- 15 m. Thermal budgets yielded a 50 2/sq emitter using a P509 source. To reduce process time and get high efficiency, rapid thermal diffusion by JR lamp was employed in air atmosphere at 700 t for 15 m.
