4H-SiC (0001）Epilayer Growth and Electrical Property of Schottky Diode

Shigehiro Nishino

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4H-SiC (0001）Epilayer 성장 및 쇼트키 다이오드의 전기적 특성

박치권, 이원재, 이원재, 신병철

4H-SiC (0001）Epilayer Growth and Electrical Property of Schottky Diode

, , Shigehiro Nishino,

J Electr Electron Mater 2006;19(4):344-349.
Published online: April 1, 2006

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Keywords: SiC epilayer, CST, Closed space technique, Step-bunching, EPD, Etch pit density, MPD, Micropipe density

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4H-SiC (0001）Epilayer Growth and Electrical Property of Schottky Diode

J Electr Electron Mater. 2006;19(4):344-349. Published online April 1, 2006

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Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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4H-SiC (0001）Epilayer Growth and Electrical Property of Schottky Diode

J Electr Electron Mater. 2006;19(4):344-349. Published online April 1, 2006

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4H-SiC (0001）Epilayer 성장 및 쇼트키 다이오드의 전기적 특성

4H-SiC (0001）Epilayer Growth and Electrical Property of Schottky Diode

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