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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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표면 도핑 기법을 사용한 SOI RESURF LDMOSFET의 항복전압 및 온-저항 특성분석

김형우, 김상철, 방욱, 강인호, 김기현, 김남균

Breakdown Voltage and On-resistance Characteristics of the Surface Doped SOI RESURF LDMOSFET

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J Electr Electron Mater 2006;19(1):23-28.
Published online: January 1, 2006
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Breakdown Voltage and On-resistance Characteristics of the Surface Doped SOI RESURF LDMOSFET
J Electr Electron Mater. 2006;19(1):23-28.   Published online January 1, 2006
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Breakdown Voltage and On-resistance Characteristics of the Surface Doped SOI RESURF LDMOSFET
J Electr Electron Mater. 2006;19(1):23-28.   Published online January 1, 2006
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