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게이트 산화막 어닐링을 이용한 서브 마이크론 PMOS 트랜지스터의 NBTI 향상

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Impact of Post Gate Oxidation Anneal on Negatlve Bias Temperature Instability of Deep Submicron PMOSFETs

Young Min Kim
J Electr Electron Mater 2003;16(3):181-185.
Published online: March 1, 2003
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Impact of Post Gate Oxidation Anneal on Negatlve Bias Temperature Instability of Deep Submicron PMOSFETs
J Electr Electron Mater. 2003;16(3):181-185.   Published online March 1, 2003
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Impact of Post Gate Oxidation Anneal on Negatlve Bias Temperature Instability of Deep Submicron PMOSFETs
J Electr Electron Mater. 2003;16(3):181-185.   Published online March 1, 2003
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