Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

SONOS 비휘발성 기억소자의 향상된 프로그램/소거 반복 특성

김병철, 서광열

The Improved Electrical Endurance(Program/Erase Cycles) Characteristics of SONOS Nonvolatile Memory Device

Byung Cheul Kim, Kwang Yell Seo
J Electr Electron Mater 2003;16(1):5-10.
Published online: January 1, 2003
  • 2 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
prev next

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

The Improved Electrical Endurance(Program/Erase Cycles) Characteristics of SONOS Nonvolatile Memory Device
J Electr Electron Mater. 2003;16(1):5-10.   Published online January 1, 2003
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
The Improved Electrical Endurance(Program/Erase Cycles) Characteristics of SONOS Nonvolatile Memory Device
J Electr Electron Mater. 2003;16(1):5-10.   Published online January 1, 2003
Close