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반도체 / 13-2-3 : 고 에너지 이온 주입된 CMOS 쌍 우물 구조의 레치업 면역성 예측을 위한 TCAD 모의실험 연구

송한정, 김종민, 곽계달

A Study on the TCAD Simulation to Predict the Latchup Immunity of High Energy Ion Implanted CMOS Twin Well Structures

Han Jung Song, Jong Min Kim, Kae Dal Kwack
J Electr Electron Mater 2000;13(2):106-113.
Published online: February 1, 2000
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A Study on the TCAD Simulation to Predict the Latchup Immunity of High Energy Ion Implanted CMOS Twin Well Structures
J Electr Electron Mater. 2000;13(2):106-113.   Published online February 1, 2000
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Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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A Study on the TCAD Simulation to Predict the Latchup Immunity of High Energy Ion Implanted CMOS Twin Well Structures
J Electr Electron Mater. 2000;13(2):106-113.   Published online February 1, 2000
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