The Ga2O3 thin films were deposited using an RF sputtering system and the effect of crystallographic and optical properties under rapid thermal annealing conditions on Ga2O3 thin film was evaluated. A rapid thermal annealing method can fabricate a crystalline Ga2O3 thin film which is applied to various fields with a low cost and a high efficiency compared with the conventional post-annealing method. In this study, the Ga2O3 treated at 900℃ for 1 min showed the beta and gamma phases in XRD measurement. In optical properties, the crystalline Ga2O3 represented a high transmittance of more than 80% in the visible region and was calculated with a high optical bandgap energy of 4.58 eV. The beta and gamma phases Ga2O3 can be obtained by adjusting the rapid thermal annealing temperatures, and the various properties such as the optical bandgap energy can be controlled. Moreover, it is expected that crystalline Ga2O3 can be applied to various devices by controlling not only temperature but process time.
We prepared SnSx thin films on both soda-lime glass (SLG) and molybdenum(Mo)/SLG substrates by a two-step process using a Sn precursor followed by sulfur reaction in rapid thermal annealing (RTA) at different sulfurization temperatures (Ts = 200℃, 230℃, 250℃, and 300℃) and annealing times (ts = 10 min and 30 min). The single SnS phase was dominant for 200℃≤Ts<250℃, while an additional phase of SnS2 was appeared at Ts≥250℃ alongside SnS. The SnS grains in all the samples showed strong growth along the preferred [040] direction. The band-gap energy (Eg) of the films was estimated to be 1.24 eV.
In this paper, TiO2 based thin-film transistors (TFTs) were fabricated using by an atomic layer deposition with high aspect ratio and excellent step coverage. Ti02 semiconducting layer was deposited showing a rutile phase through the rapid thermal annealing process, and exhibited TFT characteristics with a 200 pm channel length of low-leakage currents (none of current flow during off-state), stable threshold voltages (-10 V - 0 V), and a much higher on/off current ratio (
Because the Pb-based piezoelectric materials showed problems such as an environmentalpollution. lead-free ZnSnO3 materials were studied in the present study. The ZnSnO3 thin films weredeposited at 640℃ on Pt/Ti/SiO2 substrate by pulsed laser deposition (PLD) and were annealed for 5 minat 750℃ using rapid thermal annealing (RTA) in nitrogen atmosphere. Samples annealed at 750℃ showeda smooth morphology and an improvement of the dielectric and leakage properties, as compared withas-grown samples. However, electrical properties of the ZnSnO3 thin films obtained in the present studyshould be improved for piezoelectric applications.
In this study, transparent conducting Al-doped Zinc Oxide (AZO) films with a thickness of 150 nm were prepared on corning glass substrate by the RF magnetron sputtering with using a Al-doped zinc oxide (AZO), (Al2o3: 2 wt%) target at room temperature. This study investigated the effect of rapid thermal annealing temperature and oxygen ambient on structural, electrical and optical properties of Al-doped zinc oxide (AZO) thin films. The films were annealed at temperatures ranging from 400 to 700℃ by using Rapid thermal equipment in oxygen ambient. The effect of RTA treatment on the structural properties were studied by x-ray diffraction and atomic force microscopy. It is observed that the Al-doped zinc oxide (AZO) thin film annealed at 500℃ at 5 minute oxygen ambient gas reveals the strongest XRD emission intensity and narrowest full width at half maximum among the temperature studied. The enhanced UV emission from the film annealed at 500℃ at 5 minute oxygen ambient gas is attributed to the improved crystalline quality of Al-doped zinc oxide (AZO) thin film due to the effective relaxation of residual compressive stress and achieving maximum grain size.
Even though nano-scale materials were very advantageous for various applications, there are still problems to be solved such as the stabilization of surface state and realization of low contact resistances between a semiconducting nanowire and electrodes in nano-electronics. It is well known that the effects of contacts barrier between nano-channel and metal electrodes were dominant in carrier transportation in individual nano-electronics. In this report, it was investigated the electrical properties of GaN nanorod devices after chemical etching and rapid thermal annealing for making good contacts. After KOH wet-etching of the contact area the devices showed better electrical performance compared with non-treated GaN individual devices but still didn`t have linear voltage-current characteristics. The shape of voltage-current properties of GaN devices were improved remarkably after rapid thermal annealing as showing Ohmic behaviors with further bigger conductivities. Even though chemical etching of the nanorod surfaces could cause scattering of carriers, in here it was shown that the most important and dominant factor in carrier transport of nano-electronics was realization of low contact barrier between nano-channel and metal electrodes surely.
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