Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
Search
Advanced Search
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

Page Path

반도체 : 논문 ; UV 노광과 RTA 공정의 도입이 Sol-Gel 법으로 제조한 강유전성 Sr0.9Bi2.1Ta1.8Nb0.2O9 박막의 결정성 및 유전/전기적 특성에 미치는 영향

김영준, 강동균, 김병호

Effects of the Introduction of UV Irradiation and Rapid Thermal Annealing Process to Sol-Gel Method Derived Ferroelectric Srp0.9Bi2.1Ta1.8Nb0.2O9 Thin Films on Crystallization and Dielectric/Electrical Properties

Yeong Jun Kim, Dong Gyun Kang, Byeong Ho Kim
J Electr Electron Mater 2004;17(1):7-15.
Published online: January 1, 2004
  • 9 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
prev next

Full Article

Download PDF Download PDF

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

Effects of the Introduction of UV Irradiation and Rapid Thermal Annealing Process to Sol-Gel Method Derived Ferroelectric Srp0.9Bi2.1Ta1.8Nb0.2O9 Thin Films on Crystallization and Dielectric/Electrical Properties
J Electr Electron Mater. 2004;17(1):7-15.   Published online January 1, 2004
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
Format:
Include:
Effects of the Introduction of UV Irradiation and Rapid Thermal Annealing Process to Sol-Gel Method Derived Ferroelectric Srp0.9Bi2.1Ta1.8Nb0.2O9 Thin Films on Crystallization and Dielectric/Electrical Properties
J Electr Electron Mater. 2004;17(1):7-15.   Published online January 1, 2004
Close

ABOUT

BROWSE ARTICLES

EDITORIAL POLICIES

FOR CONTRIBUTORS

© The Korean Institute of Electrical and Electronic Materials Engineers.